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Results: 1-25/26
Authors:
ZHAO XW
KOMURO S
FUJITA S
ISSHIKI H
AOYAGI Y
SUGANO T
Citation: Xw. Zhao et al., SIZE CONTROL OF SI NANOCRYSTALLITES FORMED IN AMORPHOUS SI MATRIX BY ER-DOPING, Materials science & engineering. B, Solid-state materials for advanced technology, 51(1-3), 1998, pp. 154-157
Authors:
ISSHIKI H
AOYAGI Y
SUGANO T
Citation: H. Isshiki et al., (GAAS)(M)(GAP)(N) LOW-DIMENSIONAL SHORT-PERIOD SUPERLATTICE FABRICATED BY ATOMIC LAYER EPITAXY, Microelectronic engineering, 43-4, 1998, pp. 301-307
Authors:
NOMURA S
ISSHIKI H
AOYAGI Y
SUGANO T
UCHIDA K
MIURA N
Citation: S. Nomura et al., HIGH-MAGNETIC-FIELD-INDUCED LARGE BLUESHIFT AND DEPOPULATION OF A QUASI-ONE-DIMENSIONAL ELECTRON-HOLE SYSTEM IN P-TYPE MODULATION-DOPED SEMICONDUCTOR QUANTUM WIRES, Physical review. B, Condensed matter, 57(4), 1998, pp. 2407-2414
Authors:
LEE JS
ISSHIKI H
SUGANO T
AOYAGI Y
Citation: Js. Lee et al., SURFACE-STRUCTURE CONTROL OF GAAS (111)A VICINAL SUBSTRATES BY METAL-ORGANIC VAPOR-PHASE EPITAXY, Journal of crystal growth, 183(1-2), 1998, pp. 43-48
Authors:
DEJIMA T
SAITO R
YUGO S
ISSHIKI H
KIMURA T
Citation: T. Dejima et al., EFFECTS OF HYDROGEN PLASMA TREATMENT ON THE 1.54 MU-M LUMINESCENCE OFERBIUM-DOPED POROUS SILICON, Journal of applied physics, 84(2), 1998, pp. 1036-1040
Authors:
LEE JS
ISSHIKI H
SUGANO T
AOYAGI Y
Citation: Js. Lee et al., INGAAS GAAS QUANTUM NANOSTRUCTURE FABRICATION ON GAAS (111)A VICINAL SUBSTRATES BY ATOMIC LAYER EPITAXY/, Journal of applied physics, 83(10), 1998, pp. 5525-5528
Authors:
ZHAO XW
KOMURO S
ISSHIKI H
MARUYAMA S
AOYAGI Y
SUGANO T
Citation: Xw. Zhao et al., PHOTOLUMINESCENCE AND PROBE EFFECT OF ER-DOPED NANOMETER-SIZED SI MATERIALS, Applied surface science, 114, 1997, pp. 121-125
Authors:
MEGURO T
ISSHIKI H
LEE JS
IWAI S
AOYAGI Y
Citation: T. Meguro et al., EFFECTS OF ACTIVE HYDROGEN ON ATOMIC LAYER EPITAXY OF GAAS, Applied surface science, 112, 1997, pp. 118-121
Authors:
ISSHIKI H
AOYAGI Y
SUGANO T
Citation: H. Isshiki et al., QUANTUM-WIRE STRUCTURES INCORPORATING (GAAS)(M)(GAP)(N) SHORT-PERIOD SUPERLATTICE FABRICATED BY ATOMIC LAYER EPITAXY, Applied surface science, 112, 1997, pp. 122-126
Authors:
LEE JS
ISSHIKI H
SUGANO T
AOYAGI Y
Citation: Js. Lee et al., SELECTIVE-AREA GROWTH AT MULTI-ATOMIC-HEIGHT STEPS ARRANGED ON GAAS (111)A VICINAL SURFACES BY ATOMIC LAYER EPITAXY, Applied surface science, 112, 1997, pp. 132-137
Authors:
LEE JS
ISSHIKI H
SUGANO T
AOYAGI Y
Citation: Js. Lee et al., MULTIATOMIC STEP FORMATION WITH EXCELLENT UNIFORMITY ON VICINAL (111)A GAAS-SURFACES BY METALORGANIC VAPOR-PHASE EPITAXY, Journal of crystal growth, 173(1-2), 1997, pp. 27-32
Authors:
NOMURA S
ISSHIKI H
AOYAGI Y
SUGANO T
Citation: S. Nomura et al., MAGNETIC-FIELD EFFECTS IN P-TYPE MODULATION-DOPED GAAS QUANTUM WIRES, Physica. B, Condensed matter, 227(1-4), 1996, pp. 38-41
Authors:
LEE JS
IWAI S
ISSHIKI H
MEGURO T
SUGANO T
AOYAGI Y
Citation: Js. Lee et al., SELF-LIMITING GROWTH ON NOMINALLY ORIENTED (111)A GAAS SUBSTRATES IN ATOMIC LAYER EPITAXY, Applied surface science, 103(3), 1996, pp. 275-278
Authors:
KURIOKA H
KISHI H
ISSHIKI H
TAGOH H
MORI K
KITAGAWA T
NAGATA T
DOHI K
MURAGUCHI A
Citation: H. Kurioka et al., ISOLATION AND CHARACTERIZATION OF A TATA-LESS PROMOTER FOR THE HUMAN RAG-1 GENE, Molecular immunology, 33(13), 1996, pp. 1059-1066
Authors:
LEE JS
IWAI S
ISSHIKI H
MEGURO T
SUGANO T
AOYAGI Y
Citation: Js. Lee et al., ATOMIC LAYER EPITAXY OF GAAS AND GAASXP1-X ON NOMINALLY ORIENTED GAAS(111) SUBSTRATES WITH HIGH-QUALITY SURFACE AND INTERFACES, Journal of crystal growth, 160(1-2), 1996, pp. 21-26
Authors:
YAMAMOTO Y
ISSHIKI H
NAKAMURA T
Citation: Y. Yamamoto et al., INSTANTANEOUS MEASUREMENT OF ELECTRICAL PARAMETERS IN A PALM DURING ELECTRODERMAL ACTIVITY, IEEE transactions on instrumentation and measurement, 45(2), 1996, pp. 483-487
Authors:
KOMURO S
MARUYAMA S
MORIKAWA T
ZHAO XW
ISSHIKI H
AOYAGI Y
Citation: S. Komuro et al., ROOM-TEMPERATURE LUMINESCENCE FROM ERBIUM-DOPED SILICON THIN-FILMS PREPARED BY LASER-ABLATION, Applied physics letters, 69(25), 1996, pp. 3896-3898
Authors:
ISSHIKI H
AOYAGI Y
SUGANO T
IWAI S
MEGURO T
Citation: H. Isshiki et al., CHARACTERIZATION OF GAAS GAASP QUANTUM-WIRE STRUCTURES FABRICATED BY ATOMIC LAYER EPITAXY/, Journal of applied physics, 78(12), 1995, pp. 7277-7281
Authors:
LEE JS
IWAI S
ISSHIKI H
MEGURO T
SUGANO T
AOYAGI Y
Citation: Js. Lee et al., STEP INDUCED DESORPTION OF ASHX IN ATOMIC LAYER EPITAXY ON GAAS(001) VICINAL SUBSTRATES, Applied physics letters, 67(9), 1995, pp. 1283-1285
Authors:
ISSHIKI H
KURIOKA H
TAGOH H
MURAGUCHI A
Citation: H. Isshiki et al., CHARACTERIZATION OF THE RAG-1 GENE PROMOTER, The FASEB journal, 8(5), 1994, pp. 10000982-10000982
Authors:
MURAGUCHI A
TAGOH H
KURIOKA H
ISSHIKI H
Citation: A. Muraguchi et al., INDUCTION OF RECOMBINATION ACTIVATION GENE (RAG) TRANSCRIPTION IN HUMAN LYMPHOID PROGENITOR-CELL LINE BY RECOMBINANT CYTOKINES AND STROMAL LINES, Journal of cellular biochemistry, 1994, pp. 457-457
Authors:
ISSHIKI H
AOYAGI Y
SUGANO T
IWAI S
MEGURO T
Citation: H. Isshiki et al., SURFACE PROCESSES OF SELECTIVE GROWTH BY ATOMIC LAYER EPITAXY, Applied surface science, 82-3, 1994, pp. 57-63
Authors:
IWAI S
MEGURO T
ISSHIKI H
SUGANO T
AOYAGI Y
Citation: S. Iwai et al., REDUCTION OF CARBON IMPURITY IN GAAS BY PHOTOIRRADIATION IN ATOMIC LAYER EPITAXY, Applied surface science, 80, 1994, pp. 232-236
Authors:
ISSHIKI H
IWAI S
MEGURO T
AOYAGI Y
SUGANO T
Citation: H. Isshiki et al., RECTANGULAR SHAPED QUANTUM-WIRE FABRICATION BY GROWTH MODE SWITCHING BETWEEN ISOTROPIC AND ANISOTROPIC ATOMIC LAYER EPITAXY, Journal of crystal growth, 145(1-4), 1994, pp. 976-977
Authors:
KIMURA T
ISSHIKI H
ISHIDA H
YUGO S
SAITO R
IKOMA T
Citation: T. Kimura et al., TIME-RESOLVED STUDY ON THE IMPACT EXCITATION AND QUENCHING PROCESSES OF THE 1.54-MU-M ELECTROLUMINESCENCE EMISSION OF ER IONS IN INP, Journal of applied physics, 76(6), 1994, pp. 3714-3719