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Results: 1-20 |
Results: 20
Very-high power density AlGaN/GaN HEMTs
Authors: Wu, YF Kapolnek, D Ibbetson, JP Parikh, P Keller, BP Mishra, UK
Citation: Yf. Wu et al., Very-high power density AlGaN/GaN HEMTs, IEEE DEVICE, 48(3), 2001, pp. 586-590
Electrical transport of an AlGaN/GaN two-dimensional electron gas
Authors: Saxler, A Debray, P Perrin, R Elhamri, S Mitchel, WC Elsass, CR Smorchkova, LP Heying, B Haus, E Fini, P Ibbetson, JP Keller, S Petroff, PM DenBaars, SP Mishra, UK Speck, JS
Citation: A. Saxler et al., Electrical transport of an AlGaN/GaN two-dimensional electron gas, MRS I J N S, 5, 2000, pp. NIL_532-NIL_537
Growth and microstructure of self-assembled ErAs islands in GaAs
Authors: Kadow, C Johnson, JA Kolstad, K Ibbetson, JP Gossard, AC
Citation: C. Kadow et al., Growth and microstructure of self-assembled ErAs islands in GaAs, J VAC SCI B, 18(4), 2000, pp. 2197-2203
Determination of tilt in the lateral epitaxial overgrowth of GaN using X-ray diffraction
Authors: Fini, P Marchand, H Ibbetson, JP DenBaars, SP Mishra, UK Speck, JS
Citation: P. Fini et al., Determination of tilt in the lateral epitaxial overgrowth of GaN using X-ray diffraction, J CRYST GR, 209(4), 2000, pp. 581-590
Persistent photoconductivity study in a high mobility AlGaN/GaN heterostructure
Authors: Elhamri, S Saxler, A Mitchel, WC Elsass, CR Smorchkova, IP Heying, B Haus, E Fini, P Ibbetson, JP Keller, S Petroff, PM DenBaars, SP Mishra, UK Speck, JS
Citation: S. Elhamri et al., Persistent photoconductivity study in a high mobility AlGaN/GaN heterostructure, J APPL PHYS, 88(11), 2000, pp. 6583-6588
Charge control and mobility in AlGaN/GaN transistors: Experimental and theoretical studies
Authors: Zhang, YF Smorchkova, IP Elsass, CR Keller, S Ibbetson, JP Denbaars, S Mishra, UK Singh, J
Citation: Yf. Zhang et al., Charge control and mobility in AlGaN/GaN transistors: Experimental and theoretical studies, J APPL PHYS, 87(11), 2000, pp. 7981-7987
Characterization of an AlGaN/GaN two-dimensional electron gas structure
Authors: Saxler, A Debray, P Perrin, R Elhamri, S Mitchel, WC Elsass, CR Smorchkova, IP Heying, B Haus, E Fini, P Ibbetson, JP Keller, S Petroff, PM DenBaars, SP Mishra, UK Speck, JS
Citation: A. Saxler et al., Characterization of an AlGaN/GaN two-dimensional electron gas structure, J APPL PHYS, 87(1), 2000, pp. 369-374
Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
Authors: Ibbetson, JP Fini, PT Ness, KD DenBaars, SP Speck, JS Mishra, UK
Citation: Jp. Ibbetson et al., Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors, APPL PHYS L, 77(2), 2000, pp. 250-252
Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy
Authors: Smorchkova, IP Haus, E Heying, B Kozodoy, P Fini, P Ibbetson, JP Keller, S DenBaars, SP Speck, JS Mishra, UK
Citation: Ip. Smorchkova et al., Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy, APPL PHYS L, 76(6), 2000, pp. 718-720
Fluctuation controlled hopping of bound magnetic polarons in ErAs : GaAs nanocomposites
Authors: Schmidt, DR Petukhov, AG Foygel, M Ibbetson, JP Allen, SJ
Citation: Dr. Schmidt et al., Fluctuation controlled hopping of bound magnetic polarons in ErAs : GaAs nanocomposites, PHYS REV L, 82(4), 1999, pp. 823-826
Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy
Authors: Smorchkova, IP Elsass, CR Ibbetson, JP Vetury, R Heying, B Fini, P Haus, E DenBaars, SP Speck, JS Mishra, UK
Citation: Ip. Smorchkova et al., Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy, J APPL PHYS, 86(8), 1999, pp. 4520-4526
Self-assembled ErAs islands in GaAs: Growth and subpicosecond carrier dynamics
Authors: Kadow, C Fleischer, SB Ibbetson, JP Bowers, JE Gossard, AC Dong, JW Palmstrom, CJ
Citation: C. Kadow et al., Self-assembled ErAs islands in GaAs: Growth and subpicosecond carrier dynamics, APPL PHYS L, 75(22), 1999, pp. 3548-3550
High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors onlaterally epitaxially overgrown GaN
Authors: Parish, G Keller, S Kozodoy, P Ibbetson, JP Marchand, H Fini, PT Fleischer, SB DenBaars, SP Mishra, UK Tarsa, EJ
Citation: G. Parish et al., High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors onlaterally epitaxially overgrown GaN, APPL PHYS L, 75(2), 1999, pp. 247-249
Subpicosecond carrier dynamics in low-temperature grown GaAs on Si substrates
Authors: Kadow, C Fleischer, SB Ibbetson, JP Bowers, JE Gossard, AC
Citation: C. Kadow et al., Subpicosecond carrier dynamics in low-temperature grown GaAs on Si substrates, APPL PHYS L, 75(17), 1999, pp. 2575-2577
High-quality coalescence of laterally overgrown GaN stripes on GaN/sapphire seed layers
Authors: Fini, P Zhao, L Moran, B Hansen, M Marchand, H Ibbetson, JP DenBaars, SP Mishra, UK Speck, JS
Citation: P. Fini et al., High-quality coalescence of laterally overgrown GaN stripes on GaN/sapphire seed layers, APPL PHYS L, 75(12), 1999, pp. 1706-1708
High mobility two-dimensional electron gas in AlGaN GaN heterostructures grown by plasma-assisted molecular beam epitaxy
Authors: Elsass, CR Smorchkova, IP Heying, B Haus, E Fini, P Maranowski, K Ibbetson, JP Keller, S Petroff, PM DenBaars, SP Mishra, UK Speck, JS
Citation: Cr. Elsass et al., High mobility two-dimensional electron gas in AlGaN GaN heterostructures grown by plasma-assisted molecular beam epitaxy, APPL PHYS L, 74(23), 1999, pp. 3528-3530
Reduced thermal conductivity in low-temperature-grown GaAs
Authors: Jackson, AW Ibbetson, JP Gossard, AC Mishra, UK
Citation: Aw. Jackson et al., Reduced thermal conductivity in low-temperature-grown GaAs, APPL PHYS L, 74(16), 1999, pp. 2325-2327
Cathodoluminescence mapping of epitaxial lateral overgrowth in gallium nitride
Authors: Rosner, SJ Girolami, G Marchand, H Fini, PT Ibbetson, JP Zhao, L Keller, S Mishra, UK DenBaars, SP Speck, JS
Citation: Sj. Rosner et al., Cathodoluminescence mapping of epitaxial lateral overgrowth in gallium nitride, APPL PHYS L, 74(14), 1999, pp. 2035-2037
Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth
Authors: Chichibu, SF Marchand, H Minsky, MS Keller, S Fini, PT Ibbetson, JP Fleischer, SB Speck, JS Bowers, JE Hu, E Mishra, UK DenBaars, SP Deguchi, T Soto, T Nakamura, S
Citation: Sf. Chichibu et al., Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth, APPL PHYS L, 74(10), 1999, pp. 1460-1462
Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition
Authors: Marchand, H Ibbetson, JP Fini, PT Keller, S DenBaars, SP Speck, JS Mishra, UK
Citation: H. Marchand et al., Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition, J CRYST GR, 195(1-4), 1998, pp. 328-332
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