AAAAAA
Results: 1-25/37
Authors:
Kawahara, T
Okamoto, M
Kimura, A
Morimoto, J
Tahira, K
Miyakawa, T
Yoshino, K
Ikari, T
Citation: T. Kawahara et al., Photoacoustic spectra for porous silicon using piezoelectric transducer and microphone, JPN J A P 1, 40(5B), 2001, pp. 3610-3613
Authors:
Tanaka, S
Ikari, T
Kitagawa, H
Citation: S. Tanaka et al., In-diffusion and annealing processes of substitutional nickel atoms in dislocation-free silicon, JPN J A P 1, 40(5A), 2001, pp. 3063-3068
Authors:
Ikari, T
Fukuyama, A
Akashi, Y
Citation: T. Ikari et al., Investigation of deep levels in semi-insulating GaAs by means of a thermally activated piezoelectric photoacoustic measurements, MAT SC S PR, 4(1-3), 2001, pp. 253-255
Authors:
Fukuyama, A
Nagatomo, H
Akashi, Y
Ikari, T
Citation: A. Fukuyama et al., Piezoelectric photoacoustic spectra of Zn-doped InGaAlP light-emitting diodes, MAT SC S PR, 4(1-3), 2001, pp. 265-267
Authors:
Yoshino, K
Mitani, N
Ikari, T
Fons, PJ
Niki, S
Yamada, A
Citation: K. Yoshino et al., Optical properties of high-quality CuGaSe2 epitaxial layers examined by piezoelectric photoacoustic spectroscopy, SOL EN MAT, 67(1-4), 2001, pp. 173-178
Authors:
Yoshino, K
Mikami, H
Imai, K
Yoneta, M
Ikari, T
Citation: K. Yoshino et al., Optical characterization of native defects in ZnSe substrate, PHYSICA B, 302, 2001, pp. 299-306
Authors:
Yoshino, K
Mitani, N
Sugiyama, M
Chichibu, SF
Komaki, H
Ikari, T
Citation: K. Yoshino et al., Optical and electrical properties of AgIn(SSe)(2) crystals, PHYSICA B, 302, 2001, pp. 349-356
Authors:
Yoshino, K
Sugiyama, M
Maruoka, D
Chichibu, SF
Komaki, H
Umeda, K
Ikari, T
Citation: K. Yoshino et al., Photoluminescence spectra of CuGaSe2 crystals, PHYSICA B, 302, 2001, pp. 357-363
Authors:
Kokudo, N
Tada, K
Seki, M
Ohta, H
Azekura, K
Ueno, M
Ohta, K
Yamaguchi, T
Matsubara, T
Takahashi, T
Nakajima, T
Muto, T
Ikari, T
Yanagisawa, A
Kato, Y
Citation: N. Kokudo et al., Proliferative activity of intrahepatic colorectal metastases after preoperative hemihepatic portal vein embolization, HEPATOLOGY, 34(2), 2001, pp. 267-272
Authors:
Shigetomi, S
Ikari, T
Nishimura, N
Citation: S. Shigetomi et al., Annealing behavior of layered semiconductor p-GaSe single crystal, PHYS ST S-A, 185(2), 2001, pp. 341-348
Authors:
Fukuyama, A
Fukuhara, H
Tanaka, S
Memon, AA
Sakai, K
Akashi, Y
Ikari, T
Citation: A. Fukuyama et al., Piezoelectric photothermal study of AlxGa1-xAs epitaxial layer (x=0.22, 0.28, and 0.5) grown on semi-insulating GaAs substrate, J APPL PHYS, 90(9), 2001, pp. 4385-4391
Authors:
Fukuyama, A
Memon, A
Sakai, K
Akashi, Y
Ikari, T
Citation: A. Fukuyama et al., Investigation of deep levels in semi-insulating GaAs by means of the temperature change piezoelectric photo-thermal measurements, J APPL PHYS, 89(3), 2001, pp. 1751-1754
Authors:
Yoshino, K
Ikari, T
Shirakata, S
Miyake, H
Hiramatsu, K
Citation: K. Yoshino et al., Sharp band edge photoluminescence of high-purity CuInS2 single crystals, APPL PHYS L, 78(6), 2001, pp. 742-744
Authors:
Shigetomi, S
Ikari, T
Nakashima, H
Citation: S. Shigetomi et al., Electrical properties of p- and n-GaSe doped with As and Ge, JPN J A P 1, 39(9A), 2000, pp. 5083-5084
Authors:
Sakai, K
Yoshino, K
Fukuyama, A
Yokoyama, H
Ikari, T
Maeda, K
Citation: K. Sakai et al., Crystallization of amorphous GeSe2 semiconductor by isothermal annealing without light radiation, JPN J A P 1, 39(3A), 2000, pp. 1058-1061
Authors:
Shigetomi, S
Ikari, T
Citation: S. Shigetomi et T. Ikari, Annealing behavior of layer semiconductor p-InSe doped with Hg, JPN J A P 1, 39(3A), 2000, pp. 1184-1185
Authors:
Tanaka, S
Ikari, T
Kitagawa, H
Citation: S. Tanaka et al., Diffusion and electrical properties of nickel in silicon, DEFECT DIFF, 183-1, 2000, pp. 171-180
Authors:
Kohno, N
Ikari, T
Kawaida, M
Tanaka, K
Kawaura, M
Kano, S
Nakamizo, M
Citation: N. Kohno et al., Survival results of neoadjuvant chemotherapy for advanced squamous cell carcinoma of the head and neck, JPN J CLIN, 30(6), 2000, pp. 253-258
Authors:
Yoneta, M
Uechi, H
Ichino, K
Yoshino, K
Kobayashi, H
Ikari, T
Ohishi, M
Saito, H
Citation: M. Yoneta et al., Growth of bulk-ZnS by solid phase recrystallization, PHYS ST S-A, 180(1), 2000, pp. 183-187
Authors:
Yoshino, K
Mikami, H
Yoneta, M
Saito, H
Ohishi, M
Ikari, T
Citation: K. Yoshino et al., Nonradiative carrier recombination centers of Cl-doped ZnSe epitaxial layers, PHYS ST S-A, 180(1), 2000, pp. 201-205
Authors:
Sakai, K
Uemoto, T
Yokoyama, H
Fukuyama, A
Yoshino, K
Ikari, T
Maeda, K
Citation: K. Sakai et al., Annealing time and temperature dependence for photo-induced crystallization in amorphous GeSe2, J NON-CRYST, 266, 2000, pp. 933-937
Authors:
Yoshino, K
Mikami, H
Yoneta, M
Ikari, T
Citation: K. Yoshino et al., Photoluminescence and photoacoustic spectra of ZnSe bulk crystals and epitaxial layers, J LUMINESC, 87-9, 2000, pp. 608-610
Authors:
Yoshino, K
Yoneta, M
Saito, H
Ohishi, M
Chan, LH
Abe, T
Ando, K
Ikari, T
Citation: K. Yoshino et al., Photoluminescence and photoacoustic spectra of N-doped ZnSe epitaxial layers grown by molecular beam epitaxy, J CRYST GR, 214, 2000, pp. 572-575
Authors:
Yoshino, K
Yokoyama, H
Maeda, K
Ikari, T
Citation: K. Yoshino et al., Crystal growth and photoluminescence of CuInXGa1-XSe2 alloys, J CRYST GR, 211(1-4), 2000, pp. 476-479
Authors:
Fukuyama, A
Akashi, Y
Suemitsu, M
Ikari, T
Citation: A. Fukuyama et al., Detailed observation of the photoquenching effect of EL2 in semi-insulating GaAs by the piezoelectric photoacoustic measurements, J CRYST GR, 210(1-3), 2000, pp. 255-259