Authors: Iliadis, AA Zahurak, JK Neal, T Masselink, WT

Citation: Aa. Iliadis et al., Lateral diffusion effects in AuGe based source-drain contacts to AlInAs/InGaAs/InP doped channel MODFETs, J ELEC MAT, 28(8), 1999, pp. 944-948

Authors: Iliadis, AA Andronescu, SN Yang, W Vispute, RD Stanishevsky, A Orloff, JH Sharma, RP Venkatesan, T Wood, MC Jones, KA

Citation: Aa. Iliadis et al., Pt and W ohmic contacts to p-6H-SiC by focused ion beam direct-write deposition, J ELEC MAT, 28(3), 1999, pp. 136-140

Authors: Vispute, RD Choopun, S Enck, R Patel, A Talyansky, V Sharma, RP Venkatesan, T Sarney, WL Salamanca-Riba, L Andronescu, SN Iliadis, AA Jones, KA

Citation: Rd. Vispute et al., Pulsed laser deposition and processing of wide band gap semiconductors andrelated materials, J ELEC MAT, 28(3), 1999, pp. 275-286

Authors: Caviglia, AL Iliadis, AA

Citation: Al. Caviglia et Aa. Iliadis, A large-signal SOI MOSFET model including dynamic self-heating based on small-signal model parameters, IEEE DEVICE, 46(4), 1999, pp. 762-768

Authors: Iliadis, AA Andronescu, SN Edinger, K Orloff, JH Vispute, RD Talyansky, V Sharma, RP Venkatesan, T Wood, MC Jones, KA

Citation: Aa. Iliadis et al., Ohmic contacts to p-6H-SiC using focused ion-beam surface-modification andpulsed laser epitaxial TiN deposition, APPL PHYS L, 73(24), 1998, pp. 3545-3547