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Results: 1-8 |
Results: 8
Monolithically integrated dual-wavelength self-sustained pulsating laser diodes with real refractive index guided self-aligned structure
Authors: Onishi, T Imafuji, O Fukuhisa, T Mochida, A Kobayashi, Y Yuri, M Itoh, K Shimizu, H
Citation: T. Onishi et al., Monolithically integrated dual-wavelength self-sustained pulsating laser diodes with real refractive index guided self-aligned structure, JPN J A P 1, 40(11), 2001, pp. 6401-6405
Monolithically integrated 780-nm-band high-power and 650-nm-band laser diodes with real refractive index guided self-aligned structure
Authors: Onishi, T Imafuji, O Fukuhisa, T Mochida, A Kobayashi, Y Yuri, M Itoh, K Shimizu, H
Citation: T. Onishi et al., Monolithically integrated 780-nm-band high-power and 650-nm-band laser diodes with real refractive index guided self-aligned structure, IEEE PHOTON, 13(6), 2001, pp. 550-552
Epitaxial regrowth of AlGaInP on AlGaInP grooved structure by MOVPE
Authors: Fukuhisa, T Imafuji, O Mannoh, M Yuri, M Itoh, K
Citation: T. Fukuhisa et al., Epitaxial regrowth of AlGaInP on AlGaInP grooved structure by MOVPE, J CRYST GR, 221, 2000, pp. 208-211
Drastic reduction of threading dislocation in GaN regrown on grooved stripe structure
Authors: Ishida, M Ogawa, M Orita, K Imafuji, O Yuri, M Sugino, T Itoh, K
Citation: M. Ishida et al., Drastic reduction of threading dislocation in GaN regrown on grooved stripe structure, J CRYST GR, 221, 2000, pp. 345-349
Reduction of threading dislocations in GaN on sapphire by buffer layer annealing in low-pressure metalorganic chemical vapor deposition
Authors: Hashimoto, T Yuri, M Ishida, M Terakoshi, Y Imafuji, O Sugino, T Itoh, K
Citation: T. Hashimoto et al., Reduction of threading dislocations in GaN on sapphire by buffer layer annealing in low-pressure metalorganic chemical vapor deposition, JPN J A P 1, 38(12A), 1999, pp. 6605-6610
Low operating current and high-temperature operation of 650-nm AlGaInP high-power laser diodes with real refractive index guided self-aligned structure
Authors: Imafuji, O Fukuhisa, T Yuri, M Mannoh, M Yoshikawa, A Itoh, K
Citation: O. Imafuji et al., Low operating current and high-temperature operation of 650-nm AlGaInP high-power laser diodes with real refractive index guided self-aligned structure, IEEE S T QU, 5(3), 1999, pp. 721-728
Quantitative study of nitridated sapphire surfaces by x-ray photoelectron spectroscopy
Authors: Hashimoto, T Terakoshi, Y Yuri, M Ishida, M Imafuji, O Sugino, T Itoh, K
Citation: T. Hashimoto et al., Quantitative study of nitridated sapphire surfaces by x-ray photoelectron spectroscopy, J APPL PHYS, 86(7), 1999, pp. 3670-3675
High power operation of real refractive index guided self-aligned AlGalnP laser diodes with window structure
Authors: Onishi, T Imafuji, O Fukuhisa, T Kobayashi, Y Yuri, M Mannoh, M Yoshikawa, A Itoh, K
Citation: T. Onishi et al., High power operation of real refractive index guided self-aligned AlGalnP laser diodes with window structure, ELECTR LETT, 35(25), 1999, pp. 2208-2209
Risultati: 1-8 |