Authors: Irvine, AC Durrani, ZAK Ahmed, H

Citation: Ac. Irvine et al., A high-speed silicon-based few-electron memory with metal-oxide-semiconductor field-effect transistor gain element, J APPL PHYS, 87(12), 2000, pp. 8594-8603

Authors: Durrani, ZAK Irvine, AC Ahmed, H

Citation: Zak. Durrani et al., Coulomb blockade memory using integrated single-electron transistor/metal-oxide-semiconductor transistor gain cells, IEEE DEVICE, 47(12), 2000, pp. 2334-2339

Authors: Muller, HO Williams, DA Mizuta, H Durrani, ZAK Irvine, AC Ahmed, H

Citation: Ho. Muller et al., Simulation of Si multiple tunnel junctions, PHYSICA B, 272(1-4), 1999, pp. 85-87

Authors: Durrani, ZAK Irvine, AC Ahmed, H Nakazato, K

Citation: Zak. Durrani et al., A memory cell with single-electron and metal-oxide-semiconductor transistor integration, APPL PHYS L, 74(9), 1999, pp. 1293-1295