AAAAAA
Results:
1-10
|
Results: 10
Authors:
Itsumi, M
Ohfuji, S
Akiya, H
Nakayama, S
Yoshino, H
Citation: M. Itsumi et al., Electrical characteristics of silicon-nodule-related via failures observedin aluminum-silicon interconnects, J SOL ST EL, 4(3), 2000, pp. 125-130
Authors:
Itsumi, M
Maeda, M
Takeuchi, H
Morie, T
Citation: M. Itsumi et al., Water-assisted repair of plasma-induced damage in the silicon/silicon-dioxide system, J VAC SCI B, 18(3), 2000, pp. 1268-1275
Authors:
Itsumi, M
Citation: M. Itsumi, Substrate defects affecting gate oxide integrity, MAT SCI E B, 73(1-3), 2000, pp. 184-190
Authors:
Itsumi, M
Citation: M. Itsumi, Analysis of grown-in defects in Czochralski Si, J CRYST GR, 210(1-3), 2000, pp. 1-6
Authors:
Ueki, T
Itsumi, M
Takeda, T
Citation: T. Ueki et al., Carbon in grown-in defects in Czochralski silicon and its influence on gate-oxide defects, JPN J A P 1, 38(10), 1999, pp. 5695-5699
Authors:
Itsumi, M
Maeda, M
Ohfuji, S
Ueki, T
Citation: M. Itsumi et al., Two kinds of impurity-related mark on thermal oxides originating in octahedral void defects, JPN J A P 1, 38(10), 1999, pp. 5720-5724
Authors:
Maeda, M
Yamamoto, E
Ohfuji, S
Itsumi, M
Citation: M. Maeda et al., Dielectric characteristics of a metal-insulator-metal capacitor using plasma-enhanced chemical vapor deposited silicon nitride films, J VAC SCI B, 17(1), 1999, pp. 201-204
Authors:
Itsumi, M
Maeda, M
Ueki, T
Tazawa, S
Citation: M. Itsumi et al., Oxide ridge formed around octahedral void defects on (001)-oriented Czochralski silicon, J APPL PHYS, 86(4), 1999, pp. 2330-2333
Authors:
Itsumi, M
Ueki, T
Yabumoto, N
Suzuki, M
Citation: M. Itsumi et al., Octahedral void defects and related circular stains on thermal oxides, J APPL PHYS, 86(3), 1999, pp. 1322-1325
Authors:
Maeda, M
Itsumi, M
Citation: M. Maeda et M. Itsumi, Thermal dissociation process of hydrogen atoms in plasma-enhanced chemicalvapor deposited silicon nitride films, J APPL PHYS, 84(9), 1998, pp. 5243-5247
Risultati:
1-10
|