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Results: 1-19 |
Results: 19
A study of deep traps at the SiO2/6H-SiC interface relying upon the nonequilibrium field effect
Authors: Ivanov, PA Samsonova, TP Panteleev, VN Polyakov, DY
Citation: Pa. Ivanov et al., A study of deep traps at the SiO2/6H-SiC interface relying upon the nonequilibrium field effect, SEMICONDUCT, 35(4), 2001, pp. 468-473
Interaction of an electromagnetic wave packet with an ionization front: Copropagating configuration - art. no. 037401
Authors: Bakunov, MI Maslov, AV Ivanov, PA
Citation: Mi. Bakunov et al., Interaction of an electromagnetic wave packet with an ionization front: Copropagating configuration - art. no. 037401, PHYS REV E, 6303(3), 2001, pp. 7401
Recombinant Listeria strains producing the nontoxic L-chain of botulinum neurotoxin A in a soluble form
Authors: Vertiev, YV Zdanovsky, AG Shevelev, AB Borinskaya, SA Gening, EL Martin, T Ivanov, PA Yankovsky, NK
Citation: Yv. Vertiev et al., Recombinant Listeria strains producing the nontoxic L-chain of botulinum neurotoxin A in a soluble form, RES MICROB, 152(6), 2001, pp. 563-567
Sup35p yeast prion-like protein as an adapter for production of the Gag-p55 antigen of HIV-1 and the L-chain of botulinum neurotoxin in Saccharomycescerevisiae
Authors: Ivanov, PA Lewitin, EI Shevelev, BI Fominov, GV Wojciechowska, JA Mobarhan, AHA Vertiev, YV Yankovsky, NK Shevelev, AB
Citation: Pa. Ivanov et al., Sup35p yeast prion-like protein as an adapter for production of the Gag-p55 antigen of HIV-1 and the L-chain of botulinum neurotoxin in Saccharomycescerevisiae, RES MICROB, 152(1), 2001, pp. 27-35
Transient characteristics of a 1.8 kV, 3.8 A 4H-SiC bipolar junction transistor
Authors: Ivanov, PA Levinshtein, ME Agarwal, AK Palmour, JW
Citation: Pa. Ivanov et al., Transient characteristics of a 1.8 kV, 3.8 A 4H-SiC bipolar junction transistor, SEMIC SCI T, 16(6), 2001, pp. 521-525
Turn-off performance of 2.6 kV 4H-SiC asymmetrical GTO thyristor
Authors: Agarwal, AK Ivanov, PA Levinshtein, ME Palmour, JW Rumyantsev, SL Ryu, SH
Citation: Ak. Agarwal et al., Turn-off performance of 2.6 kV 4H-SiC asymmetrical GTO thyristor, SEMIC SCI T, 16(4), 2001, pp. 260-262
Temperature dependence of turn-on processes in 4H-SiC thyristors
Authors: Levinshtein, ME Mnatsakanov, TT Ivanov, PA Agarwal, AK Palmour, JW Rumyantsev, SL Tandoev, AG Yurkov, SN
Citation: Me. Levinshtein et al., Temperature dependence of turn-on processes in 4H-SiC thyristors, SOL ST ELEC, 45(3), 2001, pp. 453-459
Translation initiation factor eIF3 probably binds with microtubules in mammalian cells
Authors: Shanina, NA Ivanov, PA Chudinova, EM Severin, FF Nadezhdina, ES
Citation: Na. Shanina et al., Translation initiation factor eIF3 probably binds with microtubules in mammalian cells, MOL BIOL, 35(4), 2001, pp. 544-551
Sm-Nd and Sr isotope systematics of scheelite from the giant Au(-W) deposit Muruntau (Uzbekistan): implications for the age and sources of Au mineralization
Authors: Kempe, U Belyatsky, BV Krymsky, RS Kremenetsky, AA Ivanov, PA
Citation: U. Kempe et al., Sm-Nd and Sr isotope systematics of scheelite from the giant Au(-W) deposit Muruntau (Uzbekistan): implications for the age and sources of Au mineralization, MIN DEPOSIT, 36(5), 2001, pp. 379-392
Current-voltage characteristics of electroluminescent Me/(a-Si : H): Er/c-Si structures prepared by magnetron sputtering
Authors: Ivanov, PA Kon'kov, OI Terukov, EI
Citation: Pa. Ivanov et al., Current-voltage characteristics of electroluminescent Me/(a-Si : H): Er/c-Si structures prepared by magnetron sputtering, SEMICONDUCT, 34(5), 2000, pp. 598-602
'Classical' current-voltage characteristics of 4H-SiC p(+)-n junction diodes
Authors: Ivanov, PA Levinshtein, ME Palmour, JW Rumyantsev, SL Singh, R
Citation: Pa. Ivanov et al., 'Classical' current-voltage characteristics of 4H-SiC p(+)-n junction diodes, SEMIC SCI T, 15(9), 2000, pp. 908-910
Noise spectroscopy of local surface levels in semiconductors
Authors: Ivanov, PA Levinshtein, ME Palmour, JW Rumyantsev, SL
Citation: Pa. Ivanov et al., Noise spectroscopy of local surface levels in semiconductors, SEMIC SCI T, 15(2), 2000, pp. 164-168
Turn-off operation of a MOS-gate 2.6 kV 4H-SiC gate turn-off thyristor
Authors: Ivanov, PA Levinshtein, ME Rumyantsev, SL Agarwal, AK Palmour, JW
Citation: Pa. Ivanov et al., Turn-off operation of a MOS-gate 2.6 kV 4H-SiC gate turn-off thyristor, SOL ST ELEC, 44(12), 2000, pp. 2155-2159
High voltage SiC diodes with small recovery time
Authors: Levinshtein, ME Mnatsakanov, TT Ivanov, PA Palmour, JW Rumyantsev, SL Singh, R Yurkov, SN
Citation: Me. Levinshtein et al., High voltage SiC diodes with small recovery time, ELECTR LETT, 36(14), 2000, pp. 1241-1242
Gas sensitivity of silicon carbide-based diode structures
Authors: Filippov, VI Sinyanskii, VF Terent'ev, AA Yakimov, SS Ivanov, PA
Citation: Vi. Filippov et al., Gas sensitivity of silicon carbide-based diode structures, TECH PHYS, 44(2), 1999, pp. 180-183
Internal initiation of translation directed by the 5 '-untranslated regionof the tobamovirus subgenomic RNA I-2
Authors: Skulachev, MV Ivanov, PA Karpova, OV Korpela, T Rodionova, NP Dorokhov, YL Atabekov, JG
Citation: Mv. Skulachev et al., Internal initiation of translation directed by the 5 '-untranslated regionof the tobamovirus subgenomic RNA I-2, VIROLOGY, 263(1), 1999, pp. 139-154
SiC-based phototransistor with a tunnel MOS emitter
Authors: Grekhov, IV Ivanov, PA Samsonova, TP Shulekin, AF Vexler, MI
Citation: Iv. Grekhov et al., SiC-based phototransistor with a tunnel MOS emitter, IEEE DEVICE, 46(3), 1999, pp. 577-579
Steady-state and transient forward current-voltage characteristics of 4H-silicon carbide 5.5 kV diodes at high and superhigh current densities
Authors: Dyakonova, NV Ivanov, PA Kozlov, VA Levinshtein, ME Palmour, JW Rumyantsev, SL Singh, R
Citation: Nv. Dyakonova et al., Steady-state and transient forward current-voltage characteristics of 4H-silicon carbide 5.5 kV diodes at high and superhigh current densities, IEEE DEVICE, 46(11), 1999, pp. 2188-2194
High hole lifetime (3.8 mu s) in 4H-SiC diodes with 5.5kV blocking voltage
Authors: Ivanov, PA Levinshtein, ME Irvine, KG Kordina, O Palmour, JW Rumyantsev, SL Singh, R
Citation: Pa. Ivanov et al., High hole lifetime (3.8 mu s) in 4H-SiC diodes with 5.5kV blocking voltage, ELECTR LETT, 35(16), 1999, pp. 1382-1383
Risultati: 1-19 |