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Results: 3
Specific features of the liquid-phase epitaxial growth of SiC epilayers invacuum
Authors:
Bauman, DA Gavrilin, AV Ivantsov, VA Morozov, AM Kuznetsov, NI
Citation:
Da. Bauman et al., Specific features of the liquid-phase epitaxial growth of SiC epilayers invacuum, SEMICONDUCT, 35(10), 2001, pp. 1132-1134
GaN 20-mm diameter ingots grown from melt-solution by seeded technique
Authors:
Sukhoveyev, VA Ivantsov, VA Nikitina, IP Babanin, AI Polyakov, AY Govorkov, AV Smirnov, NB Mil'vidskii, MG Dmitriev, VA
Citation:
Va. Sukhoveyev et al., GaN 20-mm diameter ingots grown from melt-solution by seeded technique, MRS I J N S, 5, 2000, pp. NIL_376-NIL_381
Origin of yellow luminescence from reduced pressure grown bulk GaN crystals
Authors:
Herrera-Zaldivar, M Fernandez, P Piqueras, J Sukhoveyev, VV Ivantsov, VA Shreter, YG
Citation:
M. Herrera-zaldivar et al., Origin of yellow luminescence from reduced pressure grown bulk GaN crystals, APPL PHYS A, 71(1), 2000, pp. 55-58
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