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Results: 1-4 |
Results: 4
Mass transfer in non-steady-state hydride epitaxy of Si1-xGex/Si structures
Authors: Orlov, LK Ivin, SV Potapov, AV Ivina, NL
Citation: Lk. Orlov et al., Mass transfer in non-steady-state hydride epitaxy of Si1-xGex/Si structures, TECH PHYS, 46(4), 2001, pp. 417-421
Effect of surface segregation on the sharpness of heteroboundaries in multilayered Si(Ge)/Si1-xGex structures grown from atomic beams in vacuum
Authors: Ivina, NL Orlov, LK
Citation: Nl. Ivina et Lk. Orlov, Effect of surface segregation on the sharpness of heteroboundaries in multilayered Si(Ge)/Si1-xGex structures grown from atomic beams in vacuum, PHYS SOL ST, 43(6), 2001, pp. 1182-1187
Investigation of barrier tunneling characteristics of symmetrical double quantum well in In0.25Ga0.75As/GaAs/In0.25Ga0.75As heterostructure
Authors: Orlov, LK Ivina, NL Romanov, YA Rubtsova, RA
Citation: Lk. Orlov et al., Investigation of barrier tunneling characteristics of symmetrical double quantum well in In0.25Ga0.75As/GaAs/In0.25Ga0.75As heterostructure, PHYS SOL ST, 42(3), 2000, pp. 548-553
Evaluation of compositional intermixing at interfaces in Si(Ge)/Si1-xGex heteroepitaxial structures grown by molecular beam epitaxy with combined sources of Si and GeH4
Authors: Orlov, LK Ivina, NL Potapov, AV
Citation: Lk. Orlov et al., Evaluation of compositional intermixing at interfaces in Si(Ge)/Si1-xGex heteroepitaxial structures grown by molecular beam epitaxy with combined sources of Si and GeH4, SEMICONDUCT, 34(10), 2000, pp. 1103-1108
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