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Results: 1-20 |
Results: 20
MAGNETRON ION ETCHING OF THROUGH-WAFER VIA HOLES FOR GAAS MONOLITHIC MICROWAVE INTEGRATED-CIRCUITS USING SICL4
Authors: MITRA A NORDQUIST CD JACKSON TN MAYER TS
Citation: A. Mitra et al., MAGNETRON ION ETCHING OF THROUGH-WAFER VIA HOLES FOR GAAS MONOLITHIC MICROWAVE INTEGRATED-CIRCUITS USING SICL4, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2695-2698
FULLY SELF-ALIGNED TRI-LAYER A-SI-H THIN-FILM TRANSISTORS WITH DEPOSITED DOPED CONTACT LAYER
Authors: THOMASSON DB JACKSON TN
Citation: Db. Thomasson et Tn. Jackson, FULLY SELF-ALIGNED TRI-LAYER A-SI-H THIN-FILM TRANSISTORS WITH DEPOSITED DOPED CONTACT LAYER, IEEE electron device letters, 19(4), 1998, pp. 124-126
TITANIUM AND TITANIUM NITRIDE CONTACTS TO N-TYPE GALLIUM NITRIDE
Authors: LUTHER BP MOHNEY SE JACKSON TN
Citation: Bp. Luther et al., TITANIUM AND TITANIUM NITRIDE CONTACTS TO N-TYPE GALLIUM NITRIDE, Semiconductor science and technology (Print), 13(11), 1998, pp. 1322-1327
TEMPERATURE-INDEPENDENT TRANSPORT IN HIGH-MOBILITY PENTACENE TRANSISTORS
Authors: NELSON SF LIN YY GUNDLACH DJ JACKSON TN
Citation: Sf. Nelson et al., TEMPERATURE-INDEPENDENT TRANSPORT IN HIGH-MOBILITY PENTACENE TRANSISTORS, Applied physics letters, 72(15), 1998, pp. 1854-1856
NORWAY IN OLD-NORSE LITERATURE - SOME CONSIDERATIONS ON THE SPECIFIC CHARACTER OF SCANDINAVIA SPATIAL ORIENTATION
Authors: JACKSON TN PODOSSINOV AV
Citation: Tn. Jackson et Av. Podossinov, NORWAY IN OLD-NORSE LITERATURE - SOME CONSIDERATIONS ON THE SPECIFIC CHARACTER OF SCANDINAVIA SPATIAL ORIENTATION, Skandinavistik, 27(2), 1997, pp. 85-97
HIGH-MOBILITY TRI-LAYER A-SI-H THIN-FILM TRANSISTORS WITH ULTRATHIN ACTIVE LAYER
Authors: THOMASSON DB JACKSON TN
Citation: Db. Thomasson et Tn. Jackson, HIGH-MOBILITY TRI-LAYER A-SI-H THIN-FILM TRANSISTORS WITH ULTRATHIN ACTIVE LAYER, IEEE electron device letters, 18(8), 1997, pp. 397-399
PENTACENE ORGANIC THIN-FILM TRANSISTORS - MOLECULAR ORDERING AND MOBILITY
Authors: GUNDLACH DJ LIN YY JACKSON TN NELSON SF SCHLOM DG
Citation: Dj. Gundlach et al., PENTACENE ORGANIC THIN-FILM TRANSISTORS - MOLECULAR ORDERING AND MOBILITY, IEEE electron device letters, 18(3), 1997, pp. 87-89
THIN ACTIVE LAYER A-SI-H THIN-FILM TRANSISTORS
Authors: THOMASSON DB DAYAWANSA M CHANG JH JACKSON TN
Citation: Db. Thomasson et al., THIN ACTIVE LAYER A-SI-H THIN-FILM TRANSISTORS, IEEE electron device letters, 18(3), 1997, pp. 117-119
STACKED PENTACENE LAYER ORGANIC THIN-FILM TRANSISTORS WITH IMPROVED CHARACTERISTICS
Authors: LIN YY GUNDLACH DJ NELSON SF JACKSON TN
Citation: Yy. Lin et al., STACKED PENTACENE LAYER ORGANIC THIN-FILM TRANSISTORS WITH IMPROVED CHARACTERISTICS, IEEE electron device letters, 18(12), 1997, pp. 606-608
PENTACENE-BASED ORGANIC THIN-FILM TRANSISTORS
Authors: LIN YY GUNDLACH DJ NELSON SF JACKSON TN
Citation: Yy. Lin et al., PENTACENE-BASED ORGANIC THIN-FILM TRANSISTORS, I.E.E.E. transactions on electron devices, 44(8), 1997, pp. 1325-1331
OLIGOPHENYL-BASED ORGANIC THIN-FILM TRANSISTORS
Authors: GUNDLACH DJ LIN YY JACKSON TN SCHLOM DG
Citation: Dj. Gundlach et al., OLIGOPHENYL-BASED ORGANIC THIN-FILM TRANSISTORS, Applied physics letters, 71(26), 1997, pp. 3853-3855
INVESTIGATION OF THE MECHANISM FOR OHMIC CONTACT FORMATION IN AL AND TI AL CONTACTS TO N-TYPE GAN/
Authors: LUTHER BP MOHNEY SE JACKSON TN KHAN MA CHEN Q YANG JW
Citation: Bp. Luther et al., INVESTIGATION OF THE MECHANISM FOR OHMIC CONTACT FORMATION IN AL AND TI AL CONTACTS TO N-TYPE GAN/, Applied physics letters, 70(1), 1997, pp. 57-59
CHARACTERIZATION OF SEMICONDUCTOR HETEROJUNCTIONS USING INTERNAL PHOTOEMISSION
Authors: CHEN IS JACKSON TN WRONSKI CR
Citation: Is. Chen et al., CHARACTERIZATION OF SEMICONDUCTOR HETEROJUNCTIONS USING INTERNAL PHOTOEMISSION, Journal of applied physics, 79(11), 1996, pp. 8470-8474
OHMIC CONTACTS TO N-TYPE SILICON-GERMANIUM
Authors: NELSON SF JACKSON TN
Citation: Sf. Nelson et Tn. Jackson, OHMIC CONTACTS TO N-TYPE SILICON-GERMANIUM, Applied physics letters, 69(23), 1996, pp. 3563-3565
THERMAL-STABILITY OF UNDOPED STRAINED SI CHANNEL SIGE HETEROSTRUCTURES
Authors: KLAUK H JACKSON TN NELSON SF CHU JO
Citation: H. Klauk et al., THERMAL-STABILITY OF UNDOPED STRAINED SI CHANNEL SIGE HETEROSTRUCTURES, Applied physics letters, 68(14), 1996, pp. 1975-1977
ARSENIC GAS-PHASE DOPING OF POLYSILICON
Authors: RANSOM CM JACKSON TN DEGELORMO JF KOTECKI D GRAIMANN C SADANA DK
Citation: Cm. Ransom et al., ARSENIC GAS-PHASE DOPING OF POLYSILICON, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(3), 1994, pp. 1390-1393
SHALLOW N-PHASE DOPING( JUNCTIONS IN SILICON BY ARSENIC GAS)
Authors: RANSOM CM JACKSON TN DEGELORMO JF ZELLER C KOTECKI DE GRAIMANN C SADANA DK BENEDICT J
Citation: Cm. Ransom et al., SHALLOW N-PHASE DOPING( JUNCTIONS IN SILICON BY ARSENIC GAS), Journal of the Electrochemical Society, 141(5), 1994, pp. 1378-1381
MODELING AND EXPERIMENTAL-ANALYSIS OF THE IMPACT OF PROCESS-INDUCED STRESS ON THE ELECTRICAL PERFORMANCE OF GAAS-MESFETS
Authors: MCNALLY PJ ROSENBERG JJ JACKSON TN RAMIREZ JC
Citation: Pj. Mcnally et al., MODELING AND EXPERIMENTAL-ANALYSIS OF THE IMPACT OF PROCESS-INDUCED STRESS ON THE ELECTRICAL PERFORMANCE OF GAAS-MESFETS, Solid-state electronics, 36(11), 1993, pp. 1597-1612
IIA-9 UNDOPED SIGE HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS
Authors: JACKSON TN NELSON SF CHU JO MEYERSON BS
Citation: Tn. Jackson et al., IIA-9 UNDOPED SIGE HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 2104-2105
SYSTEMATICS OF ELECTRON-MOBILITY IN SI SIGE HETEROSTRUCTURES
Authors: NELSON SF ISMAIL K JACKSON TN NOCERA JJ CHU JO MEYERSON BS
Citation: Sf. Nelson et al., SYSTEMATICS OF ELECTRON-MOBILITY IN SI SIGE HETEROSTRUCTURES, Applied physics letters, 63(6), 1993, pp. 794-796
Risultati: 1-20 |