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Results: 1-17 |
Results: 17
REMOVAL OF THREADING DISLOCATIONS FROM PATTERNED HETEROEPITAXIAL SEMICONDUCTORS BY GLIDE TO SIDEWALLS
Authors: ZHANG XG LI P ZHAO G PARENT DW JAIN FC AYERS JE
Citation: Xg. Zhang et al., REMOVAL OF THREADING DISLOCATIONS FROM PATTERNED HETEROEPITAXIAL SEMICONDUCTORS BY GLIDE TO SIDEWALLS, Journal of electronic materials, 27(11), 1998, pp. 1248-1253
HIGH-PERFORMANCE (F(T)SIMILAR-TO-500GHZ) IN0.52AL0.48AS IN0.53GA0.47AS/INP QUANTUM-WIRE MODFETS EMPLOYING ASYMMETRIC COUPLED-WELL CHANNELS/
Authors: HELLER EK ISLAM SK ZHAO G JAIN FC
Citation: Ek. Heller et al., HIGH-PERFORMANCE (F(T)SIMILAR-TO-500GHZ) IN0.52AL0.48AS IN0.53GA0.47AS/INP QUANTUM-WIRE MODFETS EMPLOYING ASYMMETRIC COUPLED-WELL CHANNELS/, International journal of infrared and millimeter waves, 19(8), 1998, pp. 1047-1058
STRUCTURAL-PROPERTIES OF ZNSYSE1-Y ZNSE/GAAS(001) HETEROSTRUCTURES GROWN BY PHOTOASSISTED METALORGANIC VAPOR-PHASE EPITAXY/
Authors: ZHANG XG KALISETTY S ROBINSON J ZHAO G PARENT DW AYERS JE JAIN FC
Citation: Xg. Zhang et al., STRUCTURAL-PROPERTIES OF ZNSYSE1-Y ZNSE/GAAS(001) HETEROSTRUCTURES GROWN BY PHOTOASSISTED METALORGANIC VAPOR-PHASE EPITAXY/, Journal of electronic materials, 26(6), 1997, pp. 697-704
A COMPARISON OF ETHYL IODIDE AND HYDROGEN-CHLORIDE FOR DOPING ZNSE GROWN BY PHOTOASSISTED MOVPE
Authors: PARENT DW KALISETTY S ZHANG XG ZHAO G ZAPPONE W ROBINSON J HELLER E AYERS JE JAIN FC
Citation: Dw. Parent et al., A COMPARISON OF ETHYL IODIDE AND HYDROGEN-CHLORIDE FOR DOPING ZNSE GROWN BY PHOTOASSISTED MOVPE, Journal of electronic materials, 26(6), 1997, pp. 710-714
STRUCTURAL-PROPERTIES OF ZNSYSE1-Y ZNSE/GAAS(001) HETEROSTRUCTURES GROWN BY PHOTOASSISTED METALORGANIC VAPOR-PHASE EPITAXY/
Authors: ZHANG XG KALISETTY S ROBINSON J ZHAO G PARENT DW AYERS JE JAIN FC
Citation: Xg. Zhang et al., STRUCTURAL-PROPERTIES OF ZNSYSE1-Y ZNSE/GAAS(001) HETEROSTRUCTURES GROWN BY PHOTOASSISTED METALORGANIC VAPOR-PHASE EPITAXY/, Journal of crystal growth, 174(1-4), 1997, pp. 726-732
COMPOSITIONAL CONTROL OF CDXZN1-XSE GROWN BY PHOTOASSISTED ORGANOMETALLIC VAPOR-PHASE EPITAXY
Authors: BAO KX MO R ZHANG XG KALISETTY S GOKHALE M ROBINSON J ZHAO G AYERS JE JAIN FC
Citation: Kx. Bao et al., COMPOSITIONAL CONTROL OF CDXZN1-XSE GROWN BY PHOTOASSISTED ORGANOMETALLIC VAPOR-PHASE EPITAXY, Journal of crystal growth, 170(1-4), 1997, pp. 497-502
ROLE OF CADMIUM IN ENHANCING OPTICAL-PROPERTIES AND CHLORINE DOPING OF PHOTO-ASSISTED OMVPE-GROWN ZNSE
Authors: GOKHALE MR BAO KX HEALEY PD JAIN FC AYERS JE
Citation: Mr. Gokhale et al., ROLE OF CADMIUM IN ENHANCING OPTICAL-PROPERTIES AND CHLORINE DOPING OF PHOTO-ASSISTED OMVPE-GROWN ZNSE, Journal of electronic materials, 25(2), 1996, pp. 207-212
ANALYSIS OF QUANTUM-WIRE HIGH-ELECTRON-MOBILITY TRANSISTOR (HEMT) STRUCTURE
Authors: ISLAM SK JAIN FC
Citation: Sk. Islam et Fc. Jain, ANALYSIS OF QUANTUM-WIRE HIGH-ELECTRON-MOBILITY TRANSISTOR (HEMT) STRUCTURE, Solid-state electronics, 39(4), 1996, pp. 615-620
FACTORS INFLUENCING LOW-TEMPERATURE PHOTO-ASSISTED OMVPE GROWTH OF ZNSE
Authors: GOKHALE MR BAO KX HEALEY PD JAIN FC AYERS JE
Citation: Mr. Gokhale et al., FACTORS INFLUENCING LOW-TEMPERATURE PHOTO-ASSISTED OMVPE GROWTH OF ZNSE, Journal of crystal growth, 165(1-2), 1996, pp. 25-30
THE INFLUENCE OF IMPURITIES ON THE DISLOCATION BEHAVIOR IN HETEROEPITAXIAL ZNSE ON GAAS
Authors: KALISETTY S GOKHALE M BAO K AYERS JE JAIN FC
Citation: S. Kalisetty et al., THE INFLUENCE OF IMPURITIES ON THE DISLOCATION BEHAVIOR IN HETEROEPITAXIAL ZNSE ON GAAS, Applied physics letters, 68(12), 1996, pp. 1693-1695
TERAHERTZ QUANTUM INTERFERENCE TRANSISTORS (QUIT) USING ONE-DIMENSIONAL MODFET-TYPE ELECTRON WAVE-GUIDES
Authors: ISLAM SK JAIN FC
Citation: Sk. Islam et Fc. Jain, TERAHERTZ QUANTUM INTERFERENCE TRANSISTORS (QUIT) USING ONE-DIMENSIONAL MODFET-TYPE ELECTRON WAVE-GUIDES, Superlattices and microstructures, 17(2), 1995, pp. 221-224
X-RAY DETERMINATION OF THE DISLOCATION DENSITIES IN SEMICONDUCTOR CRYSTALS USING A BARTELS 5-CRYSTAL DIFFRACTOMETER
Authors: HEALEY PD BAO K GOKHALE M AYERS JE JAIN FC
Citation: Pd. Healey et al., X-RAY DETERMINATION OF THE DISLOCATION DENSITIES IN SEMICONDUCTOR CRYSTALS USING A BARTELS 5-CRYSTAL DIFFRACTOMETER, Acta crystallographica. Section A, Foundations of crystallography, 51, 1995, pp. 498-503
PROPERTIES OF VAPOR-PHASE EPITAXIAL ZINC SELENIDE CODOPED WITH CADMIUM AND CHLORINE
Authors: BAO K HEALEY PD GOKHALE M AYERS JE JAIN FC
Citation: K. Bao et al., PROPERTIES OF VAPOR-PHASE EPITAXIAL ZINC SELENIDE CODOPED WITH CADMIUM AND CHLORINE, Applied physics letters, 67(8), 1995, pp. 1098-1100
OPTICAL GAIN DUE TO EXCITONIC TRANSITIONS IN ZNCDSE ZNMGSSE STRAINED-LAYER QUANTUM-WELL BLUE-GREEN LASERS - PREDICTION OF LOW-THRESHOLD UNDER TENSILE STRAIN/
Authors: HUANG W JAIN FC
Citation: W. Huang et Fc. Jain, OPTICAL GAIN DUE TO EXCITONIC TRANSITIONS IN ZNCDSE ZNMGSSE STRAINED-LAYER QUANTUM-WELL BLUE-GREEN LASERS - PREDICTION OF LOW-THRESHOLD UNDER TENSILE STRAIN/, Applied physics letters, 66(13), 1995, pp. 1596-1598
HIGH-POWER ALGAAS-GAAS VISIBLE DIODE-LASERS
Authors: TIHANYI PL JAIN FC ROBINSON MJ DIXON JE WILLIAMS JE MEEHAN K ONEILL MS HEATH LS BEYEA DM
Citation: Pl. Tihanyi et al., HIGH-POWER ALGAAS-GAAS VISIBLE DIODE-LASERS, IEEE photonics technology letters, 6(7), 1994, pp. 775-777
MODELING OF PARABOLIC QUANTUM-WELL WIRE CHANNELS FOR MODULATION-DOPEDFIELD-EFFECT TRANSISTORS
Authors: ISLAM SK JAIN FC
Citation: Sk. Islam et Fc. Jain, MODELING OF PARABOLIC QUANTUM-WELL WIRE CHANNELS FOR MODULATION-DOPEDFIELD-EFFECT TRANSISTORS, Superlattices and microstructures, 14(1), 1993, pp. 15-20
AN ANALYTICAL 2-DIMENSIONAL PERTURBATION METHOD TO MODEL SUBMICRON GAAS-MESFETS - REPLY
Authors: DONKOR E JAIN FC
Citation: E. Donkor et Fc. Jain, AN ANALYTICAL 2-DIMENSIONAL PERTURBATION METHOD TO MODEL SUBMICRON GAAS-MESFETS - REPLY, IEEE transactions on microwave theory and techniques, 41(3), 1993, pp. 544-545
Risultati: 1-17 |