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Results: 1-19 |
Results: 19
TIN REACTIVE SPUTTER-DEPOSITION STUDIED AS A FUNCTION OF THE PUMPING SPEED
Authors: HEUVELMAN WM HELDERMAN P JANSSEN GCAM RADELAAR S
Citation: Wm. Heuvelman et al., TIN REACTIVE SPUTTER-DEPOSITION STUDIED AS A FUNCTION OF THE PUMPING SPEED, Thin solid films, 332(1-2), 1998, pp. 335-339
SIOF AND SIO2 DEPOSITION IN A HDP REACTOR - TOOL CHARACTERIZATION ANDFILM ANALYSIS
Authors: DENBOER DJ FUKUDA H HELMIG J VANDERHILST JBC JANSSEN GCAM KALKMAN AJ RADELAAR S
Citation: Dj. Denboer et al., SIOF AND SIO2 DEPOSITION IN A HDP REACTOR - TOOL CHARACTERIZATION ANDFILM ANALYSIS, Microelectronics and reliability, 38(2), 1998, pp. 281-286
SIOFX AND SIO2 DEPOSITION IN AN ECR-HDP REACTOR - TOOL CHARACTERIZATION AND FILM ANALYSIS
Authors: KALKMAN AJ DENBOER DJ FUKUDA H VANDERHILST JBC JANSSEN GCAM RADELAAR S
Citation: Aj. Kalkman et al., SIOFX AND SIO2 DEPOSITION IN AN ECR-HDP REACTOR - TOOL CHARACTERIZATION AND FILM ANALYSIS, Microelectronic engineering, 37-8(1-4), 1997, pp. 271-276
HIGH-PRESSURE ALUMINUM FOR SUBMICRON VIAS USING A LIQUID TRANSDUCER
Authors: JONGSTE JF LI X LOKKER JP JANSSEN GCAM RADELAAR S
Citation: Jf. Jongste et al., HIGH-PRESSURE ALUMINUM FOR SUBMICRON VIAS USING A LIQUID TRANSDUCER, Microelectronic engineering, 37-8(1-4), 1997, pp. 319-327
REACTIVE ION ETCHING OF METAL STACK CONSISTING OF AN ALUMINUM-ALLOY, WGEX, BARRIER AND TI ADHESION LAYER
Authors: SABOURET E SCHAFFNIT C JONGSTE JF JANSSEN GCAM RADELAAR S
Citation: E. Sabouret et al., REACTIVE ION ETCHING OF METAL STACK CONSISTING OF AN ALUMINUM-ALLOY, WGEX, BARRIER AND TI ADHESION LAYER, Microelectronic engineering, 37-8(1-4), 1997, pp. 353-363
MECHANICAL RELIABILITY OF CVD-COPPER THIN-FILMS
Authors: JONGSTE JF LOKKER JP JANSSEN GCAM RADELAAR S TORRES J PALLEAU J
Citation: Jf. Jongste et al., MECHANICAL RELIABILITY OF CVD-COPPER THIN-FILMS, Microelectronic engineering, 33(1-4), 1997, pp. 39-46
MECHANICAL-BEHAVIOR DURING THERMAL CYCLING OF ALVPD LINE PATTERNS
Authors: LOKKER JP KALKMAN AJ SCHELLEVIS H JANSSEN GCAM RADELAAR S
Citation: Jp. Lokker et al., MECHANICAL-BEHAVIOR DURING THERMAL CYCLING OF ALVPD LINE PATTERNS, Microelectronic engineering, 33(1-4), 1997, pp. 129-135
THE HYDROGEN REDUCTION OF WF6 - A KINETIC-STUDY BASED ON IN-SITU PARTIAL-PRESSURE MEASUREMENTS
Authors: OOSTERLAKEN TGM LEUSINK GJ JANSSEN GCAM RADELAAR S
Citation: Tgm. Oosterlaken et al., THE HYDROGEN REDUCTION OF WF6 - A KINETIC-STUDY BASED ON IN-SITU PARTIAL-PRESSURE MEASUREMENTS, Journal of the Electrochemical Society, 143(5), 1996, pp. 1668-1675
INFLUENCE OF MIXED REDUCTANTS ON THE GROWTH-RATE OF WF6-BASED W-CVD
Authors: JONGSTE JF OOSTERLAKEN TGM LEUSINK GJ VANDERJEUGD CA JANSSEN GCAM RADELAAR S
Citation: Jf. Jongste et al., INFLUENCE OF MIXED REDUCTANTS ON THE GROWTH-RATE OF WF6-BASED W-CVD, Applied surface science, 91(1-4), 1995, pp. 162-168
STRESS IN AL, ALSICU, AND ALVPD FILMS ON OXIDIZED SI SUBSTRATES
Authors: LEUSINK GJ LOKKER JP VANDENHOMBERG MJC JONGSTE JF OOSTERLAKEN TGM JANSSEN GCAM RADELAAR S
Citation: Gj. Leusink et al., STRESS IN AL, ALSICU, AND ALVPD FILMS ON OXIDIZED SI SUBSTRATES, Applied surface science, 91(1-4), 1995, pp. 215-219
THE EFFECT OF DOPING ATOMS ON THE KINETICS OF SELF-LIMITING TUNGSTEN FILM GROWTH ON SILICON BY REDUCTION OF TUNGSTEN HEXAFLUORIDE
Authors: VANDERJEUGD CA LEUSINK GJ OOSTERLAKEN TGM JONGSTE JF JANSSEN GCAM RADELAAR S
Citation: Ca. Vanderjeugd et al., THE EFFECT OF DOPING ATOMS ON THE KINETICS OF SELF-LIMITING TUNGSTEN FILM GROWTH ON SILICON BY REDUCTION OF TUNGSTEN HEXAFLUORIDE, Journal of the Electrochemical Society, 142(4), 1995, pp. 1326-1332
INFLUENCE OF TEMPERATURE-GRADIENTS ON PARTIAL PRESSURES IN A LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION REACTOR
Authors: OOSTERLAKEN TGM LEUSINK GJ JANSSEN GCAM RADELAAR S KUIJLAARS KJ KLEIJN CR VANDENAKKER HEA
Citation: Tgm. Oosterlaken et al., INFLUENCE OF TEMPERATURE-GRADIENTS ON PARTIAL PRESSURES IN A LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION REACTOR, Journal of applied physics, 76(5), 1994, pp. 3130-3139
DEFORMATION OF SI(100) WAFERS DURING RAPID THERMAL ANNEALING
Authors: JONGSTE JF OOSTERLAKEN TGM BART GCJ JANSSEN GCAM RADELAAR S
Citation: Jf. Jongste et al., DEFORMATION OF SI(100) WAFERS DURING RAPID THERMAL ANNEALING, Journal of applied physics, 75(6), 1994, pp. 2830-2836
RESISTIVITY AND SUPERCONDUCTING TRANSITION-TEMPERATURE OF VERY THIN AMORPHOUS TUNGSTEN GERMANIUM FILMS DEPOSITED BY CHEMICAL-VAPOR-DEPOSITION
Authors: OOSTERLAKEN TGM LEUSINK GJ KUIPER GJ BAKKER SJM VERBRUGGEN AH JAEGER HM JANSSEN GCAM RADELAAR S
Citation: Tgm. Oosterlaken et al., RESISTIVITY AND SUPERCONDUCTING TRANSITION-TEMPERATURE OF VERY THIN AMORPHOUS TUNGSTEN GERMANIUM FILMS DEPOSITED BY CHEMICAL-VAPOR-DEPOSITION, Physica. C, Superconductivity, 214(3-4), 1993, pp. 359-364
STEP COVERAGE OF TUNGSTEN FILMS DEPOSITED BY GERMANE REDUCTION OF WF6
Authors: OOSTERLAKEN TGM LEUSINK GJ JANSSEN GCAM RADELAAR S
Citation: Tgm. Oosterlaken et al., STEP COVERAGE OF TUNGSTEN FILMS DEPOSITED BY GERMANE REDUCTION OF WF6, Applied surface science, 73, 1993, pp. 64-70
PROCEEDINGS OF THE 5TH ROPEAN-WORKSHOP-ON-REFRACTORY-METALS-AND-SILICIDES - SINT MICHIELSGESTEL, THE NETHERLANDS - MARCH 29-31, 1993 - PREFACE
Authors: JANSSEN GCAM JONGSTE JF RADELAAR E
Citation: Gcam. Janssen et al., PROCEEDINGS OF THE 5TH ROPEAN-WORKSHOP-ON-REFRACTORY-METALS-AND-SILICIDES - SINT MICHIELSGESTEL, THE NETHERLANDS - MARCH 29-31, 1993 - PREFACE, Applied surface science, 73, 1993, pp. 180000007-180000007
CHEMICAL-VAPOR-DEPOSITION TUNGSTEN FILM GROWTH STUDIED BY INSITU GROWTH STRESS MEASUREMENTS
Authors: LEUSINK GJ OOSTERLAKEN TGM JANSSEN GCAM RADELAAR S
Citation: Gj. Leusink et al., CHEMICAL-VAPOR-DEPOSITION TUNGSTEN FILM GROWTH STUDIED BY INSITU GROWTH STRESS MEASUREMENTS, Thin solid films, 228(1-2), 1993, pp. 125-128
KINETICS OF THE FORMATION OF C49 TISI2 FROM TI-SI MULTILAYERS AS OBSERVED BY IN-SITU STRESS MEASUREMENTS
Authors: JONGSTE JF ALKEMADE PFA JANSSEN GCAM RADELAAR S
Citation: Jf. Jongste et al., KINETICS OF THE FORMATION OF C49 TISI2 FROM TI-SI MULTILAYERS AS OBSERVED BY IN-SITU STRESS MEASUREMENTS, Journal of applied physics, 74(6), 1993, pp. 3869-3879
THE EVOLUTION OF GROWTH STRESSES IN CHEMICAL-VAPOR-DEPOSITED TUNGSTENFILMS STUDIED BY IN-SITU WAFER CURVATURE MEASUREMENTS
Authors: LEUSINK GJ OOSTERLAKEN TGM JANSSEN GCAM RADELAAR S
Citation: Gj. Leusink et al., THE EVOLUTION OF GROWTH STRESSES IN CHEMICAL-VAPOR-DEPOSITED TUNGSTENFILMS STUDIED BY IN-SITU WAFER CURVATURE MEASUREMENTS, Journal of applied physics, 74(6), 1993, pp. 3899-3910
Risultati: 1-19 |