ACNP - Italian Periodicals Catalogue

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Results: 1-11 |

Results: 11

INAS QUANTUM DOTS IN GAAS HOLES - ISLAND NUMBER DEPENDENCE ON HOLE DIAMETER AND CONDUCTION-BAND COUPLING ESTIMATES

Authors: JEPPESEN S MILLER MS KOWALSKI B MAXIMOV I SAMUELSON L

Citation: S. Jeppesen et al., INAS QUANTUM DOTS IN GAAS HOLES - ISLAND NUMBER DEPENDENCE ON HOLE DIAMETER AND CONDUCTION-BAND COUPLING ESTIMATES, Superlattices and microstructures, 23(6), 1998, pp. 1347-1352

EFFECTS OF GA AND AS DESORPTION ON THE CHEMICAL BEAM EPITAXY GROWTH OF (001)GAAS AS MEASURED BY REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION

Authors: JUNNO B MILLER MS JEPPESEN S SAMUELSON L

Citation: B. Junno et al., EFFECTS OF GA AND AS DESORPTION ON THE CHEMICAL BEAM EPITAXY GROWTH OF (001)GAAS AS MEASURED BY REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION, Journal of applied physics, 83(8), 1998, pp. 4513-4517

CHEMICAL GAS ETCHING OF INP-BASED STRUCTURES

Authors: MAXIMOV I JEPPESEN S MONTELIUS L SAMUELSON L

Citation: I. Maximov et al., CHEMICAL GAS ETCHING OF INP-BASED STRUCTURES, Microelectronic engineering, 35(1-4), 1997, pp. 87-89

MANIPULATING INAS ISLAND SIZES WITH CHEMICAL BEAM EPITAXY GROWTH ON GAAS PATTERNS

Authors: MILLER MS LANDIN L JEPPESEN S PETERSSON A MAXIMOV I KOWALSKI B SAMUELSON L

Citation: Ms. Miller et al., MANIPULATING INAS ISLAND SIZES WITH CHEMICAL BEAM EPITAXY GROWTH ON GAAS PATTERNS, Journal of crystal growth, 175, 1997, pp. 747-753

LEVEL-CROSSING OF NANOMETER-SIZED INAS ISLANDS IN GAAS

Authors: KOWALSKI B OMLING P MILLER MS JEPPESEN S SAMUELSON L

Citation: B. Kowalski et al., LEVEL-CROSSING OF NANOMETER-SIZED INAS ISLANDS IN GAAS, Solid-state electronics, 40(1-8), 1996, pp. 367-371

ASSEMBLING STRAINED INAS ISLANDS BY CHEMICAL BEAM EPITAXY

Authors: MILLER MS JEPPESEN S HESSMAN D KOWALSKI B MAXIMOV I JUNNO B SAMUELSON L

Citation: Ms. Miller et al., ASSEMBLING STRAINED INAS ISLANDS BY CHEMICAL BEAM EPITAXY, Solid-state electronics, 40(1-8), 1996, pp. 609-614

A COMPARISON OF RHEED RECONSTRUCTION PHASES ON (100)INAS, GAAS AND INP

Authors: JUNNO B JEPPESEN S MILLER MS SAMUELSON L

Citation: B. Junno et al., A COMPARISON OF RHEED RECONSTRUCTION PHASES ON (100)INAS, GAAS AND INP, Journal of crystal growth, 164(1-4), 1996, pp. 66-70

DIRECTIONAL DEPENDENCE OF INAS ISLAND FORMATION ON PATTERNED GAAS

Authors: MILLER MS JEPPESEN S KOWALSKI B MAXIMOV I SAMUELSON L

Citation: Ms. Miller et al., DIRECTIONAL DEPENDENCE OF INAS ISLAND FORMATION ON PATTERNED GAAS, Journal of crystal growth, 164(1-4), 1996, pp. 345-355

STACKING INAS ISLANDS AND GAAS-LAYERS - STRONGLY MODULATED ONE-DIMENSIONAL ELECTRONIC SYSTEMS

Authors: MILLER MS MALM JO PISTOL ME JEPPESEN S KOWALSKI B GEORGSSON K SAMUELSON L

Citation: Ms. Miller et al., STACKING INAS ISLANDS AND GAAS-LAYERS - STRONGLY MODULATED ONE-DIMENSIONAL ELECTRONIC SYSTEMS, Journal of applied physics, 80(6), 1996, pp. 3360-3364

ASSEMBLING STRAINED INAS ISLANDS ON PATTERNED GAAS SUBSTRATES WITH CHEMICAL BEAM EPITAXY

Authors: JEPPESEN S MILLER MS HESSMAN D KOWALSKI B MAXIMOV I SAMUELSON L

Citation: S. Jeppesen et al., ASSEMBLING STRAINED INAS ISLANDS ON PATTERNED GAAS SUBSTRATES WITH CHEMICAL BEAM EPITAXY, Applied physics letters, 68(16), 1996, pp. 2228-2230

AEROSOL-PARTICLES FROM METALORGANIC VAPOR-PHASE EPITAXY BUBBLERS

Authors: DEPPERT K HANSSON HC JEPPESEN S MILLER MS SAMUELSON L SEIFERT W WIEDENSOHLER A

Citation: K. Deppert et al., AEROSOL-PARTICLES FROM METALORGANIC VAPOR-PHASE EPITAXY BUBBLERS, Journal of crystal growth, 145(1-4), 1994, pp. 636-641

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