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Results:
1-14
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Results: 14
Authors:
ABABOU S
LEPINE B
PINGEL R
GODEFROY A
QUEMERAIS A
GUIVARCH A
JEZEQUEL G
Citation: S. Ababou et al., GROWTH OF COBALT ON GAAS(001) STUDIED BY PHOTOEMISSION AND PHOTOELECTRON DIFFRACTION, Surface review and letters, 5(1), 1998, pp. 285-288
Authors:
LALLAIZON C
LEPINE B
ABABOU S
SCHUSSLER A
QUEMERAIS A
GUIVARCH A
JEZEQUEL G
DEPUTIER S
GUERIN R
Citation: C. Lallaizon et al., EPITAXIAL-GROWTH OF FE ON FE GAAS(001) REACTED LAYERS/, Applied surface science, 123, 1998, pp. 319-323
Authors:
LEPINE B
ABABOU S
GUIVARCH A
JEZEQUEL G
DEPUTIER S
GUERIN R
FILIPE A
SCHUHL A
ABEL F
COHEN C
ROCHER A
CRESTOU J
Citation: B. Lepine et al., SOLID-STATE INTERDIFFUSIONS IN EPITAXIAL FE GAAS(001) HETEROSTRUCTURES DURING ULTRAHIGH-VACUUM ANNEALINGS UP TO 450-DEGREES-C/, Journal of applied physics, 83(6), 1998, pp. 3077-3080
Authors:
DEPUTIER S
GUERIN R
LEPINE B
GUIVARCH A
JEZEQUEL G
Citation: S. Deputier et al., THE TERNARY COMPOUND FE3GA2-XASX - A PROMISING CANDIDATE FOR EPITAXIAL AND THERMODYNAMICALLY STABLE CONTACTS ON GAAS, Journal of alloys and compounds, 262, 1997, pp. 416-422
Authors:
JEZEQUEL G
THOMAS J
POLLINI I
Citation: G. Jezequel et al., EXPERIMENTAL BAND-STRUCTURE OF SEMIMETAL BISMUTH, Physical review. B, Condensed matter, 56(11), 1997, pp. 6620-6626
Authors:
CRUGUEL H
LEPINE B
ABABOU S
SOLAL F
JEZEQUEL G
NATOLI CR
BELKHOU R
Citation: H. Cruguel et al., PHOTOELECTRON DIFFRACTION EVIDENCE FOR A SURFACE SUBSTITUTIONAL SITE OF SB IN THE SB-INDUCED SMOOTH GROWTH OF AG ON AG(111), Physical review. B, Condensed matter, 55(24), 1997, pp. 16061-16064
Authors:
GODEFROY A
ABABOU S
LEPINE B
GUIVARCH A
JEZEQUEL G
Citation: A. Godefroy et al., X-RAY AND UV PHOTOELECTRON-SPECTROSCOPY OF OXIDE DESORPTION FROM INP UNDER AS-4 AND OR SB-4 OVERPRESSURES - EXCHANGE-REACTION AS-DOUBLE-LEFT-RIGHT-ARROW-SB ON INP SURFACES/, Journal of crystal growth, 179(3-4), 1997, pp. 349-355
Authors:
AGLIZ D
ABABOU S
LEPINE B
GUIVARCH A
SEBILLEAU D
QUEMERAIS A
JEZEQUEL G
Citation: D. Agliz et al., ELASTIC AND INELASTIC-SCATTERING OF PHOTO EMITTED ELEMENTS FROM GAAS(100) BY SINGLE-CRYSTAL OR DISORDERED FILMS, Le Vide, 52(279), 1996, pp. 94-95
Authors:
GUIVARCH A
LECORRE A
AUVRAY P
GUENAIS B
CAULET J
BALLINI Y
GUERIN R
DEPUTIER S
LECLANCHE MC
JEZEQUEL G
LEPINE B
QUEMERAIS A
SEBILLEAU D
Citation: A. Guivarch et al., GROWTH BY MOLECULAR-BEAM EPITAXY OF (RARE-EARTH GROUP-V ELEMENT) III-V SEMICONDUCTOR HETEROSTRUCTURES, Journal of materials research, 10(8), 1995, pp. 1942-1952
Authors:
LEPINE B
QUEMERAIS A
JEZEQUEL G
POLLINI I
Citation: B. Lepine et al., APPLICATION OF ANGLE-RESOLVED X-RAY PHOTOELECTRON-SPECTROSCOPY TO THESTUDY OF GAAS(001) SURFACES AND METAL GAAS(001) INTERFACES, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 527-530
Authors:
QUEMERAIS A
LEPINE B
JEZEQUEL G
SEBILLEAU D
POLLINI I
Citation: A. Quemerais et al., ANGLE-RESOLVED X-RAY PHOTOEMISSION-STUDY OF GAAS(001) SURFACES, Applied surface science, 78(1), 1994, pp. 1-9
Authors:
LARIVE M
JEZEQUEL G
LANDESMAN JP
SOLAL F
NAGLE J
LEPINE B
TALEBIBRAHIMI A
INDLEKOFER G
MARCADET X
Citation: M. Larive et al., PHOTOELECTRON-SPECTROSCOPY STUDY OF GA 3D AND AS 3D CORE LEVELS ON MBE-GROWN GAAS-SURFACES, Surface science, 304(3), 1994, pp. 298-308
Authors:
LEPINE B
QUEMERAIS A
SEBILLEAU D
JEZEQUEL G
AGLIZ D
BALLINI Y
GUIVARCH A
Citation: B. Lepine et al., X-RAY PHOTOELECTRON DIFFRACTION STUDY OF YBAS GAAS(001) AND SCAS/GAAS(001) HETEROSTRUCTURES/, Journal of applied physics, 76(9), 1994, pp. 5218-5224
Authors:
GOTA S
GUNNELLA R
WU ZY
JEZEQUEL G
NATOLI CR
SEBILLEAU D
BULLOCK EL
PROIX F
GUILLOT C
QUEMERAIS A
Citation: S. Gota et al., CHEMICAL-SHIFT LOW-ENERGY PHOTOELECTRON DIFFRACTION - A DETERMINATIONOF THE INP(110) CLEAN SURFACE STRUCTURAL RELAXATION, Physical review letters, 71(20), 1993, pp. 3387-3390
Risultati:
1-14
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