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Results: 1-13 |
Results: 13
SIZE MODIFICATION OF SELF-ASSEMBLED INAS QUANTUM DOTS BY IN-SITU ETCHING
Authors: SCHULER H JINPHILLIPP NY PHILLIPP F EBERL K
Citation: H. Schuler et al., SIZE MODIFICATION OF SELF-ASSEMBLED INAS QUANTUM DOTS BY IN-SITU ETCHING, Semiconductor science and technology (Print), 13(11), 1998, pp. 1341-1345
FORMATION AND OPTICAL-PROPERTIES OF CARBON-INDUCED GE DOTS
Authors: EBERL K SCHMIDT OG SCHIEKER S JINPHILLIPP NY PHILLIPP F
Citation: K. Eberl et al., FORMATION AND OPTICAL-PROPERTIES OF CARBON-INDUCED GE DOTS, Solid-state electronics, 42(7-8), 1998, pp. 1593-1597
RED-LIGHT-EMITTING INJECTION-LASER BASED ON INP GAINP SELF-ASSEMBLED QUANTUM DOTS/
Authors: ZUNDEL MK JINPHILLIPP NY PHILLIPP F EBERL K RIEDL T FEHRENBACHER E HANGLEITER A
Citation: Mk. Zundel et al., RED-LIGHT-EMITTING INJECTION-LASER BASED ON INP GAINP SELF-ASSEMBLED QUANTUM DOTS/, Applied physics letters, 73(13), 1998, pp. 1784-1786
ANNEALING EFFECTS ON CARBON-INDUCED GERMANIUM DOTS IN SILICON
Authors: SCHIEKER S SCHMIDT OG EBERL K JINPHILLIPP NY PHILLIPP F
Citation: S. Schieker et al., ANNEALING EFFECTS ON CARBON-INDUCED GERMANIUM DOTS IN SILICON, Applied physics letters, 72(25), 1998, pp. 3344-3346
THICKNESS MODULATION IN SYMMETRICALLY STRAINED III-V SEMICONDUCTOR SUPERLATTICES GROWN BY MOVPE
Authors: JINPHILLIPP NY PHILLIPP F MARSCHNER T STOLZ W
Citation: Ny. Jinphillipp et al., THICKNESS MODULATION IN SYMMETRICALLY STRAINED III-V SEMICONDUCTOR SUPERLATTICES GROWN BY MOVPE, Journal of materials science. Materials in electronics, 8(5), 1997, pp. 289-299
TEM STUDIES ON SELF-ASSEMBLING QUANTUM DOTS GROWN BY MBE
Authors: JINPHILLIPP NY HAO Y PHILLIPP F ZUNDEL MK EBERL K
Citation: Ny. Jinphillipp et al., TEM STUDIES ON SELF-ASSEMBLING QUANTUM DOTS GROWN BY MBE, European journal of cell biology, 74, 1997, pp. 115-115
FABRICATION AND BAND ALIGNMENT OF PSEUDOMORPHIC SI1-YCY, SI1-X-YGEXCYAND COUPLED SI1-YCY SI1-X-YGEXCY QUANTUM-WELL STRUCTURES ON SI SUBSTRATES/
Authors: BRUNNER K WINTER W EBERL K JINPHILLIPP NY PHILLIPP F
Citation: K. Brunner et al., FABRICATION AND BAND ALIGNMENT OF PSEUDOMORPHIC SI1-YCY, SI1-X-YGEXCYAND COUPLED SI1-YCY SI1-X-YGEXCY QUANTUM-WELL STRUCTURES ON SI SUBSTRATES/, Journal of crystal growth, 175, 1997, pp. 451-458
STRUCTURAL AND OPTICAL-PROPERTIES OF VERTICALLY ALIGNED INP QUANTUM DOTS
Authors: ZUNDEL MK SPECHT P EBERL K JINPHILLIPP NY PHILLIPP F
Citation: Mk. Zundel et al., STRUCTURAL AND OPTICAL-PROPERTIES OF VERTICALLY ALIGNED INP QUANTUM DOTS, Applied physics letters, 71(20), 1997, pp. 2972-2974
STRUCTURAL AND OPTICAL CHARACTERIZATION OF INP GAINP ISLANDS GROWN BYSOLID-SOURCE MBE/
Authors: KURTENBACH A ULRICH C JINPHILLIPP NY NOLL F EBERL K SYASSEN K PHILLIPP F
Citation: A. Kurtenbach et al., STRUCTURAL AND OPTICAL CHARACTERIZATION OF INP GAINP ISLANDS GROWN BYSOLID-SOURCE MBE/, Journal of electronic materials, 25(3), 1996, pp. 395-400
STRAIN-INDUCED SELF-ORGANIZED GROWTH OF LATERAL PERIODIC STRAINED-LAYER SUPERLATTICES ON OFF-ORIENTED SUBSTRATES BY METALORGANIC VAPOR-PHASE EPITAXY
Authors: MARSCHNER T TAPFER L JINPHILLIPP NY PHILLIPP F LUTGEN S VOLK M STOLZ W GOBEL EO
Citation: T. Marschner et al., STRAIN-INDUCED SELF-ORGANIZED GROWTH OF LATERAL PERIODIC STRAINED-LAYER SUPERLATTICES ON OFF-ORIENTED SUBSTRATES BY METALORGANIC VAPOR-PHASE EPITAXY, Solid-state electronics, 40(1-8), 1996, pp. 819-823
TRANSMISSION ELECTRON-MICROSCOPY STUDY ON DEFECT REDUCTION IN GAAS ONSI HETEROEPITAXIAL LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
Authors: JINPHILLIPP NY PHILLIPP F MARSCHNER T STOLZ W GOBEL EO
Citation: Ny. Jinphillipp et al., TRANSMISSION ELECTRON-MICROSCOPY STUDY ON DEFECT REDUCTION IN GAAS ONSI HETEROEPITAXIAL LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY, Journal of crystal growth, 158(1-2), 1996, pp. 28-36
PHOTOLUMINESCENCE STUDY OF SI1-YCY SI QUANTUM-WELL STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY/
Authors: BRUNNER K EBERL K WINTER W JINPHILLIPP NY
Citation: K. Brunner et al., PHOTOLUMINESCENCE STUDY OF SI1-YCY SI QUANTUM-WELL STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY/, Applied physics letters, 69(1), 1996, pp. 91-93
STRAIN-INDUCED CHANGES IN EPITAXIAL LAYER MORPHOLOGY OF HIGHLY STRAINED III V-SEMICONDUCTOR HETEROSTRUCTURES/
Authors: MARSCHNER T LUTGEN S VOLK M STOLZ W GOBEL EO JINPHILLIPP NY PHILLIPP F
Citation: T. Marschner et al., STRAIN-INDUCED CHANGES IN EPITAXIAL LAYER MORPHOLOGY OF HIGHLY STRAINED III V-SEMICONDUCTOR HETEROSTRUCTURES/, Superlattices and microstructures, 15(2), 1994, pp. 183-186
Risultati: 1-13 |