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Results: 1-25/39
Authors:
REYNOLDS DC
LOOK DC
JOGAI B
MOLNAR RJ
Citation: Dc. Reynolds et al., SCREENING OF EXCITONS IN GAN CRYSTALS, Journal of physics. Condensed matter, 10(25), 1998, pp. 5577-5581
Authors:
TALWAR DN
JOGAI B
LOEHR JP
Citation: Dn. Talwar et al., NOVEL TYPE-II STRAINED-LAYER SUPERLATTICES FOR LONG-WAVELENGTH INFRARED DETECTORS, Materials science & engineering. B, Solid-state materials for advanced technology, 51(1-3), 1998, pp. 12-17
Authors:
JOGAI B
Citation: B. Jogai, EFFECT OF INPLANE BIAXIAL STRAINS ON THE BAND-STRUCTURE OF WURTZITE GAN, Physical review. B, Condensed matter, 57(4), 1998, pp. 2382-2386
Authors:
REYNOLDS DC
LOOK DC
JOGAI B
LITTON CW
COLLINS TC
HARSCH W
CANTWELL G
Citation: Dc. Reynolds et al., NEUTRAL-DONOR-BOUND-EXCITON COMPLEXES IN ZNO CRYSTALS, Physical review. B, Condensed matter, 57(19), 1998, pp. 12151-12155
Authors:
REYNOLDS DC
LOOK DC
JOGAI B
MOLNAR RJ
Citation: Dc. Reynolds et al., PHONON REPLICAS ASSOCIATED WITH DONOR-BOUND-EXCITONS IN GAN, Solid state communications, 108(1), 1998, pp. 49-52
Authors:
JOGAI B
Citation: B. Jogai, EFFECTIVE MASSES OF WURTZITE GAN CALCULATED FROM AN EMPIRICAL TIGHT-BINDING MODEL, Solid state communications, 107(7), 1998, pp. 345-348
Authors:
REYNOLDS DC
LOOK DC
JOGAI B
VANNOSTRAND JE
JONES R
JENNY J
Citation: Dc. Reynolds et al., SOURCE OF THE YELLOW LUMINESCENCE BAND IN GAN GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY AND THE GREEN LUMINESCENCE BAND IN SINGLE-CRYSTAL ZNO, Solid state communications, 106(10), 1998, pp. 701-704
Authors:
JOGAI B
Citation: B. Jogai, EFFECT OF HYDROSTATIC STRAIN ON THE BAND-GAP OF WURTZITE GAN, Solid state communications, 105(7), 1998, pp. 465-468
HIGH-QUALITY INTERFACES IN GAAS-ALAS QUANTUM-WELLS DETERMINED FROM HIGH-RESOLUTION PHOTOLUMINESCENCE
Authors:
REYNOLDS DC
LOOK DC
JOGAI B
KASPI R
EVANS KR
ESTES M
Citation: Dc. Reynolds et al., HIGH-QUALITY INTERFACES IN GAAS-ALAS QUANTUM-WELLS DETERMINED FROM HIGH-RESOLUTION PHOTOLUMINESCENCE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(5), 1997, pp. 1703-1706
Authors:
REYNOLDS DC
LOOK DC
JOGAI B
MCCOY G
Citation: Dc. Reynolds et al., SHALLOW ACCEPTORS IN GAAS GROWN FROM THE VAPOR-PHASE, Journal of physics. Condensed matter, 9(48), 1997, pp. 10795-10799
Authors:
JOGAI B
STUTZ CE
Citation: B. Jogai et Ce. Stutz, EFFECT OF PARASITICS ON ELECTROCHEMICAL CAPACITANCE-VOLTAGE PROFILINGOF PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURES, Journal of electronic materials, 26(7), 1997, pp. 863-867
Authors:
REYNOLDS DC
LOOK DC
JOGAI B
COLLINS TC
Citation: Dc. Reynolds et al., SPIN SPLITTING OF DONOR-BOUND EXCITONS IN ZNO DUE TO COMBINED STRESS AND SPIN-EXCHANGE, Physical review. B, Condensed matter, 56(21), 1997, pp. 13753-13756
Authors:
REYNOLDS DC
LOOK DC
JOGAI B
PHANSE VM
VAUDO RP
Citation: Dc. Reynolds et al., IDENTIFICATION OF AN IONIZED-DONOR-BOUND-EXCITON TRANSITION IN GAN, Solid state communications, 103(9), 1997, pp. 533-535
Authors:
REYNOLDS DC
LOOK DC
JOGAI B
KASPI R
EVANS KR
Citation: Dc. Reynolds et al., CRYSTAL-FIELD SPLITTING OF DEFECT PAIR SPECTRA IN GAAS, Solid state communications, 102(1), 1997, pp. 47-51
Authors:
REYNOLDS DC
LOOK DC
JOGAI B
MORKOC H
Citation: Dc. Reynolds et al., SIMILARITIES IN THE BAND-EDGE AND DEEP-CENTER PHOTOLUMINESCENCE MECHANISMS OF ZNO AND GAN, Solid state communications, 101(9), 1997, pp. 643-646
Authors:
LU W
NG GI
JOGAI B
LEE JH
PARK CS
Citation: W. Lu et al., IDENTIFICATION OF ROOM-TEMPERATURE PHOTOLUMINESCENCE IN PSEUDOMORPHICMODULATION-DOPED ALGAAS INGAAS/GAAS QUANTUM-WELLS/, Journal of applied physics, 82(3), 1997, pp. 1345-1349
Authors:
JOGAI B
TALWAR DN
Citation: B. Jogai et Dn. Talwar, INTERBAND OPTICAL-ABSORPTION IN STRAINED INAS INXGA1-XSB TYPE-II SUPERLATTICES/, Physical review. B, Condensed matter, 54(20), 1996, pp. 14524-14531
Authors:
REYNOLDS DC
LOOK DC
JOGAI B
MCCOY GL
BAJAJ KK
Citation: Dc. Reynolds et al., MAGNETOPHOTOLUMINESCENCE STUDY OF EXCITED-STATES ASSOCIATED WITH DONOR BOUND EXCITONS IN HIGH-PURITY GAAS, Physical review. B, Condensed matter, 53(4), 1996, pp. 1891-1895
Authors:
REYNOLDS DC
LOOK DC
JOGAI B
Citation: Dc. Reynolds et al., OPTICALLY PUMPED ULTRAVIOLET LASING FROM ZNO, Solid state communications, 99(12), 1996, pp. 873-875
Authors:
LU W
LEE JH
YOON HS
PARK CS
PYUN KE
LEE HG
SUH KS
JOGAI B
Citation: W. Lu et al., ROOM-TEMPERATURE PHOTOLUMINESCENCE STUDIES OF DELTA-DOPED PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR ALGAAS INGAAS/GAAS STRUCTURES/, Solid state communications, 99(10), 1996, pp. 713-716
Authors:
REYNOLDS DC
LOOK DC
JOGAI B
MCCOY GL
Citation: Dc. Reynolds et al., GROUND-STATES AND EXCITED-STATES ASSOCIATED WITH DONOR BOUND EXCITONSIN HIGH-PURITY GAAS, Solid state communications, 97(1), 1996, pp. 59-61
Authors:
LOOK DC
JOGAI B
KASPI R
EBEL JL
EVANS KR
JONES RL
NAKANO K
SHERRIFF RE
STULZ CE
DESALVO GC
ITO C
Citation: Dc. Look et al., EFFECTS OF IN PROFILE ON MATERIAL AND DEVICE PROPERTIES OF ALGAAS INGAAS/GAAS HIGH-ELECTRON-MOBILITY TRANSISTORS/, Journal of applied physics, 79(1), 1996, pp. 540-544
Authors:
JOGAI B
STUTZ CE
Citation: B. Jogai et Ce. Stutz, A COMPARISON OF ELECTROCHEMICAL CAPACITANCE-VOLTAGE MEASUREMENTS WITHNUMERICAL SIMULATIONS FOR PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURES, Journal of applied physics, 78(4), 1995, pp. 2531-2536
Authors:
JOGAI B
Citation: B. Jogai, CHARGE-TRANSFER LIMITATIONS IN DELTA-DOPED ALGAAS INGAAS PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTORS/, Applied physics letters, 66(4), 1995, pp. 436-438
Authors:
REYNOLDS DC
LOOK DC
JOGAI B
STUTZ CE
JONES R
BAJAJ KK
Citation: Dc. Reynolds et al., MAGNETOLUMINESCENCE STUDIES IN GAAS-ALXGA1-XAS SINGLE HETEROJUNCTIONS- OBSERVATION OF PARITY-FORBIDDEN LANDAU-LEVEL TRANSITIONS, Physical review. B, Condensed matter, 50(16), 1994, pp. 11710-11713