AAAAAA
Results:
1-7
|
Results: 7
Authors:
JOHLANDER B
HARBOESORENSEN R
OLSSON G
BYLANDER L
Citation: B. Johlander et al., GROUND VERIFICATION OF IN-ORBIT ANOMALIES IN THE DOUBLE PROBE ELECTRIC-FIELD EXPERIMENT ON FREJA, IEEE transactions on nuclear science, 43(6), 1996, pp. 2767-2771
Authors:
SIMOEN E
VANHELLEMONT J
DUBUC JP
CLAEYS C
OHYAMA H
JOHLANDER B
Citation: E. Simoen et al., HIGH-ENERGY PARTICLE IRRADIATION EFFECTS ON THE LOW-FREQUENCY NOISE OF CZOCHRALSKI SILICON JUNCTION DIODES, Applied physics letters, 68(6), 1996, pp. 788-790
Authors:
CARRIERE T
BEAUCOUR J
GACH A
JOHLANDER B
ADAMS L
Citation: T. Carriere et al., DOSE-RATE AND ANNEALING EFFECTS ON TOTAL-DOSE RESPONSE OF MOS AND BIPOLAR CIRCUITS, IEEE transactions on nuclear science, 42(6), 1995, pp. 1567-1574
Authors:
APPOURCHAUX T
GOURMELON G
JOHLANDER B
Citation: T. Appourchaux et al., EFFECT OF GAMMA-RAY IRRADIATIONS ON OPTICAL FILTER GLASS, Optical engineering, 33(5), 1994, pp. 1659-1668
Authors:
VANHELLEMONT J
SIMOEN E
CLAEYS C
KANIAVA A
GAUBAS E
BOSMAN G
JOHLANDER B
ADAMS L
CLAUWS P
Citation: J. Vanhellemont et al., ON THE IMPACT OF LOW FLUENCE IRRADIATION WITH MEV PARTICLES ON SILICON DIODE CHARACTERISTICS AND RELATED MATERIAL PROPERTIES, IEEE transactions on nuclear science, 41(6), 1994, pp. 1924-1931
Authors:
HOPKINS IH
HOPKINSON GR
JOHLANDER B
Citation: Ih. Hopkins et al., PROTON-INDUCED CHARGE-TRANSFER DEGRADATION IN CCDS FOR NEAR-ROOM TEMPERATURE APPLICATIONS, IEEE transactions on nuclear science, 41(6), 1994, pp. 1984-1991
Authors:
VANHELLEMONT J
KANIAVA A
SIMOEN E
TRAUWAERT MA
CLAEYS C
JOHLANDER B
HARBOESORENSEN R
ADAMS L
CLAUWS P
Citation: J. Vanhellemont et al., GENERATION AND ANNEALING BEHAVIOR OF MEV PROTON AND CF-252 IRRADIATION-INDUCED DEEP LEVELS IN SILICON DIODES, IEEE transactions on nuclear science, 41(3), 1994, pp. 479-486
Risultati:
1-7
|