Authors: JOTHILINGAM R FARRELL T JOYCE TB GOODHEW PJ

Citation: R. Jothilingam et al., LOW-TEMPERATURE LASER-ASSISTED CBE-GROWTH OF ALGAAS, Journal of crystal growth, 188(1-4), 1998, pp. 39-44

Authors: JOTHILINGAM R DHANASEKARAN R

Citation: R. Jothilingam et R. Dhanasekaran, STUDIES OF THE INITIAL-STAGES OF LIQUID-PHASE EPITAXY GROWTH OF INGAAS ON GAAS, Materials science & engineering. B, Solid-state materials for advanced technology, 38(1-2), 1996, pp. 186-193

Authors: JOTHILINGAM R SARAVANAN S BASKAR K

Citation: R. Jothilingam et al., DEEP-LEVEL TRANSIENT SPECTROSCOPY STUDIES OF UNDOPED AND SN-DOPED ALXGA1-XAS EPILAYERS GROWN BY LIQUID-PHASE EPITAXY, Journal of materials science letters, 15(13), 1996, pp. 1132-1133

Authors: JOTHILINGAM R DHANASEKARAN R RAMASAMY P

Citation: R. Jothilingam et al., STUDIES ON NUCLEATION KINETICS OF IN1-XGAXP GAAS BY LIQUID-PHASE EPITAXY/, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 17(2), 1995, pp. 117-128

Authors: JOTHILINGAM R DHANASEKARAN R RAMASAMY P

Citation: R. Jothilingam et al., INVESTIGATIONS ON THE NUCLEATION PARAMETERS OF INGAAS GROWN ON INP DURING LPE, Journal of materials science. Materials in electronics, 5(5), 1994, pp. 267-271