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Results: 1-25/37
Authors:
MONGET C
SCHILTZ A
JOUBERT O
VALLIER L
GUILLERMET M
TORMEN B
Citation: C. Monget et al., GERMANIUM ETCHING IN HIGH-DENSITY PLASMAS FOR 0.18 MU-M COMPLEMENTARYMETAL-OXIDE-SEMICONDUCTOR GATE PATTERNING APPLICATIONS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 1833-1840
Authors:
CZUPRYNSKI P
JOUBERT O
Citation: P. Czuprynski et O. Joubert, X-RAY PHOTOELECTRON-SPECTROSCOPY ANALYSES OF SILICON DIOXIDE CONTACT HOLES ETCHED IN A MAGNETICALLY ENHANCED REACTIVE ION ETCHING REACTOR, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1051-1058
Authors:
CZUPRYNSKI P
JOUBERT O
VALLIER L
PUTTOCK M
HEITZMANN M
Citation: P. Czuprynski et al., X-RAY PHOTOELECTRON-SPECTROSCOPY ANALYSES OF METAL STACKS ETCHED IN CL-2 BCL3 HIGH-DENSITY PLASMAS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 147-158
Authors:
JOUBERT O
Citation: O. Joubert, NEW TRENDS IN PLASMA-ETCHING FOR ULTRA-LARGE-SCALE-INTEGRATION-TECHNOLOGY, Microelectronic engineering, 42, 1998, pp. 17-24
Authors:
RANGAN KK
PIFFARD Y
JOUBERT O
TOURNOUX M
Citation: Kk. Rangan et al., LI2VOSIO4 - A NATISITE-TYPE STRUCTURE, Acta crystallographica. Section C, Crystal structure communications, 54, 1998, pp. 176-177
Authors:
FOSSE N
CALDES M
JOUBERT O
GANNE M
BROHAN L
Citation: N. Fosse et al., LAYERED ALKYLTRIMETHYLAMMONIUM CHROMATES - THERMAL AND STRUCTURAL INVESTIGATIONS AND CRYSTAL-STRUCTURE OF THE ANHYDROUS BISOCTYLTRIMETHYLAMMONIUM DICHROMATE, Journal of solid state chemistry (Print), 139(2), 1998, pp. 310-320
Authors:
DREZEN T
JOUBERT O
GANNE M
BROHAN L
Citation: T. Drezen et al., [NH3(CH2)(8)NH3](3)[V15O36(CL)](NH3)(6)(H2O)(3) - SYNTHESIS AND STRUCTURE DETERMINATION OF A NOVEL CENTERED TRICOSAHEDRAL CLUSTER COMPOUND RELATED TO THE MULLER-TYPE STRUCTURE, Journal of solid state chemistry, 136(2), 1998, pp. 298-304
Authors:
CZUPRYNSKI P
JOUBERT O
HEITZMANN M
LOUIS D
VIZIOZ C
LAJOINIE E
Citation: P. Czuprynski et al., EFFICIENCY EVALUATION OF POSTETCH METAL STACK ANTICORROSION TREATMENTS USING CHEMICAL-ANALYSES BY X-RAY PHOTOELECTRON-SPECTROSCOPY AND WIDEDISPERSIVE-X-RAY FLUORESCENCE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1000-1007
Authors:
JOUBERT O
CZUPRYNSKI P
BELL FH
BERRUYER P
BLANC R
Citation: O. Joubert et al., ANALYSES OF THE CHEMICAL TOPOGRAPHY OF SILICON DIOXIDE CONTACT HOLES ETCHED IN A HIGH-DENSITY PLASMA SOURCE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(3), 1997, pp. 629-639
Authors:
BELL FH
JOUBERT O
Citation: Fh. Bell et O. Joubert, POLYSILICON GATE ETCHING IN HIGH-DENSITY PLASMAS .5. COMPARISON BETWEEN QUANTITATIVE CHEMICAL-ANALYSIS OF PHOTORESIST AND OXIDE MASKED POLYSILICON GATES ETCHED IN HBR CL-2/O-2 PLASMAS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(1), 1997, pp. 88-97
Authors:
RANGAN KK
JOUBERT O
VERBAERE A
TOURNOUX M
GOPALAKRISHNAN J
Citation: Kk. Rangan et al., MO3O5(OH)(2)(ASO4)2 - A NEW SOLID WITH A STRUCTURE RELATED TO BETA-VOPO4, European journal of solid state and inorganic chemistry, 34(6), 1997, pp. 511-525
Authors:
VALLON S
MONGET C
JOUBERT O
VALLIER L
BELL FH
PONS M
REGOLINI JL
MORIN C
SAGNES I
Citation: S. Vallon et al., POLYSILICON-GERMANIUM GATE PATTERNING STUDIES IN A HIGH-DENSITY PLASMA HELICON SOURCE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(4), 1997, pp. 1874-1880
Authors:
VALLON S
JOUBERT O
VALLIER L
FERRIEU F
DREVILLON B
BLAYO N
Citation: S. Vallon et al., REAL-TIME ULTRAVIOLET ELLIPSOMETRY MONITORING OF GATE PATTERNING IN AHIGH-DENSITY PLASMA, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 865-870
Authors:
FERRIS V
GOGLIO G
BROHAN L
JOUBERT O
MOLINIE P
GANNE M
DORDOR P
Citation: V. Ferris et al., TRANSPORT-PROPERTIES AND MAGNETIC-BEHAVIOR IN THE POLYCRYSTALLINE LANTHANUM-DEFICIENT MANGANATE PEROVSKITES (APPROXIMATE-TO-LA1-XMNO3), Materials research bulletin, 32(6), 1997, pp. 763-777
Authors:
MONGET C
VALLON S
BELL FH
VALLIER L
JOUBERT O
Citation: C. Monget et al., X-RAY PHOTOELECTRON-SPECTROSCOPY ANALYSES OF OXIDE-MASKED POLYCRYSTALLINE SIGE FEATURES ETCHED IN A HIGH-DENSITY PLASMA SOURCE, Journal of the Electrochemical Society, 144(7), 1997, pp. 2455-2461
POLYSILICON GATE ETCHING IN HIGH-DENSITY PLASMAS - COMPARISON BETWEENOXIDE HARD MASK AND RESIST MASK
Authors:
JOUBERT O
BELL FH
Citation: O. Joubert et Fh. Bell, POLYSILICON GATE ETCHING IN HIGH-DENSITY PLASMAS - COMPARISON BETWEENOXIDE HARD MASK AND RESIST MASK, Journal of the Electrochemical Society, 144(5), 1997, pp. 1854-1861
Authors:
BELL FH
JOUBERT O
Citation: Fh. Bell et O. Joubert, POLYSILICON GATE ETCHING IN HIGH-DENSITY PLASMAS .4. COMPARISON OF PHOTORESIST AND OXIDE MASKED POLYSILICON ETCHING-THICKNESS DETERMINATIONOF GATE OXIDE LAYERS USING X-RAY PHOTOELECTRON-SPECTROSCOPY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3473-3482
Authors:
BELL FH
JOUBERT O
Citation: Fh. Bell et O. Joubert, POLYSILICON GATE ETCHING IN HIGH-DENSITY PLASMAS .3. X-RAY PHOTOELECTRON-SPECTROSCOPY INVESTIGATION OF SIDEWALL PASSIVATION OF SILICON TRENCHES USING AN OXIDE HARD MASK, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2493-2499
Authors:
BELL FH
JOUBERT O
VALLIER L
Citation: Fh. Bell et al., POLYSILICON GATE ETCHING IN HIGH-DENSITY PLASMAS .2. X-RAY PHOTOELECTRON-SPECTROSCOPY INVESTIGATION OF SILICON TRENCHES ETCHED USING A CHLORINE-BASED CHEMISTRY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 1796-1806
Authors:
BELL FH
JOUBERT O
VALLIER L
Citation: Fh. Bell et al., POLYSILICON GATE ETCHING IN HIGH-DENSITY PLASMAS .1. PROCESS OPTIMIZATION USING A CHLORINE-BASED CHEMISTRY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 96-101
Authors:
JOUBERT O
WEIDMAN TW
JOSHI AM
KOSTELAK RL
Citation: O. Joubert et al., APPLICATION OF PLASMA-POLYMERIZED METHYLSILANE IN AN ALL DRY RESIST PROCESS FOR 193 AND 248 NM LITHOGRAPHY, Microelectronic engineering, 30(1-4), 1996, pp. 275-278
Authors:
BELL FH
JOUBERT O
VALLIER L
Citation: Fh. Bell et al., INFLUENCE OF THE NATURE OF THE MASK ON POLYSILICON GATE PATTERNING INHIGH-DENSITY PLASMAS, Microelectronic engineering, 30(1-4), 1996, pp. 333-336
Authors:
JOUBERT O
GANNE M
VANNIER RN
MAIRESSE G
Citation: O. Joubert et al., SOLID-PHASE SYNTHESIS AND CHARACTERIZATION OF NEW BIMEVOX SERIES - BI(4)V(2-X)M(X)O(11-X) (M=CR-III, FE-III), Solid state ionics, 83(3-4), 1996, pp. 199-207
Authors:
PONS M
PELLETIER J
JOUBERT O
PANIEZ P
Citation: M. Pons et al., DEVELOPMENT OF POLYMERS IN O-2 PLASMAS - TEMPERATURE EFFECTS AND TRANSITION TO IMPERFECT ANISOTROPY, JPN J A P 1, 34(7A), 1995, pp. 3723-3730
Authors:
KOSTELAK RL
WEIDMAN TW
VAIDYA S
JOUBERT O
PALMATEER SC
HIBBS M
Citation: Rl. Kostelak et al., APPLICATION OF PLASMA-POLYMERIZED METHYLSILANE RESIST FOR ALL-DRY 193NM DEEP-ULTRAVIOLET PROCESSING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2994-2999