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Results: 26-37/37
Authors:
JOUBERT O
JOUANNEAUX A
GANNE M
Citation: O. Joubert et al., CRYSTAL-STRUCTURE OF LOW-TEMPERATURE FORM OF BI6V3O16 DETERMINED BY RIETVELD REFINEMENT OF SYNCHROTRON-RADIATION POWDER DIFFRACTION DATA - A NEW MIXED-VALENCE AURIVILLIUS PHASE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 97(1-4), 1995, pp. 119-122
Authors:
PONS M
JOUBERT O
MARTINET C
PELLETIER J
PANABIERE JP
WEILL A
Citation: M. Pons et al., COMPARISON OF DRY DEVELOPMENT TECHNIQUES USING O-2 AND SO2 O-2 LOW-PRESSURE PLASMAS/, JPN J A P 1, 33(2), 1994, pp. 991-996
Authors:
JOUBERT O
WEIDMAN T
JOSHI A
CIRELLI R
STEIN S
LEE JTC
VAIDYA S
Citation: O. Joubert et al., PLASMA-POLYMERIZED ALL-DRY RESIST PROCESS FOR 0.25 MU-M PHOTOLITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3909-3913
Authors:
BELL FH
JOUBERT O
OEHRLEIN GS
ZHANG Y
VENDER D
Citation: Fh. Bell et al., INVESTIGATION OF SELECTIVE SIO2-TO-SI ETCHING IN AN INDUCTIVELY-COUPLED HIGH-DENSITY PLASMA USING FLUOROCARBON GASES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(6), 1994, pp. 3095-3101
Authors:
JOUBERT O
OEHRLEIN GS
SURENDRA M
ZHANG Y
Citation: O. Joubert et al., REACTIVE ION ETCHING LAG INVESTIGATION OF OXIDE ETCHING IN FLUOROCARBON ELECTRON-CYCLOTRON-RESONANCE PLASMAS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 1957-1961
Authors:
JOUBERT O
OEHRLEIN GS
ZHANG Y
Citation: O. Joubert et al., FLUOROCARBON HIGH-DENSITY PLASMA .5. INFLUENCE OF ASPECT RATIO ON THEETCH RATE OF SILICON DIOXIDE IN AN ELECTRON-CYCLOTRON-RESONANCE PLASMA, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(3), 1994, pp. 658-664
Authors:
JOUBERT O
OEHRLEIN GS
SURENDRA M
Citation: O. Joubert et al., FLUOROCARBON HIGH-DENSITY PLASMA .6. REACTIVE ION ETCHING LAG MODEL FOR CONTACT HOLE SILICON DIOXIDE ETCHING IN AN ELECTRON-CYCLOTRON-RESONANCE PLASMA, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(3), 1994, pp. 665-670
Authors:
OEHRLEIN GS
ZHANG Y
VENDER D
JOUBERT O
Citation: Gs. Oehrlein et al., FLUOROCARBON HIGH-DENSITY PLASMAS .2. SILICON DIOXIDE AND SILICON ETCHING USING CF4 AND CHF3, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(2), 1994, pp. 333-344
Authors:
JOUBERT O
JOUANNEAUX A
GANNE M
VANNIER RN
MAIRESSE G
Citation: O. Joubert et al., SOLID-PHASE SYNTHESIS AND CHARACTERIZATION OF NEW BIMEVOX SERIES - BI(4)V(2-X)M(X)O(11) (M=SB-V, NB-V), Solid state ionics, 73(3-4), 1994, pp. 309-318
Authors:
JOUBERT O
JOUANNEAUX A
GANNE M
Citation: O. Joubert et al., CRYSTAL-STRUCTURE OF LOW-TEMPERATURE FORM OF BISMUTH VANADIUM-OXIDE DETERMINED BY RIETVELD REFINEMENT OF X-RAY AND NEUTRON-DIFFRACTION DATA(ALPHA-BI4V2O11), Materials research bulletin, 29(2), 1994, pp. 175-184
Authors:
PONS M
PELLETIER J
JOUBERT O
Citation: M. Pons et al., ANISOTROPIC ETCHING OF POLYMERS IN SO2 O2 PLASMAS - HYPOTHESES ON SURFACE MECHANISMS/, Journal of applied physics, 75(9), 1994, pp. 4709-4715
Authors:
WEILL A
JOUBERT O
PANIEZ P
DEBAENE F
PONS M
SAGE D
Citation: A. Weill et al., MELT FLOW OF THE SILYLATED AREAS DURING THE DESIRE PROCESS, Microelectronic engineering, 21(1-4), 1993, pp. 251-254