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Results: 1-15 |
Results: 15
LONG-WAVELENGTH (GA, IN)SB GASB STRAINED-QUANTUM-WELL LASERS GROWN BYMOLECULAR-BEAM EPITAXY/
Authors: BERTRU N BARANOV A CUMINAL Y ALMUNEAU G GENTY F JOULLIE A BRANDT O MAZUELAS A PLOOG KH
Citation: N. Bertru et al., LONG-WAVELENGTH (GA, IN)SB GASB STRAINED-QUANTUM-WELL LASERS GROWN BYMOLECULAR-BEAM EPITAXY/, Semiconductor science and technology, 13(8), 1998, pp. 936-940
OBSERVATION OF ROOM-TEMPERATURE LASER-EMISSION FROM TYPE-III INAS GASB MULTIPLE-QUANTUM-WELL STRUCTURES/
Authors: BARANOV AN BERTRU N CUMINAL Y BOISSIER G ALIBERT C JOULLIE A
Citation: An. Baranov et al., OBSERVATION OF ROOM-TEMPERATURE LASER-EMISSION FROM TYPE-III INAS GASB MULTIPLE-QUANTUM-WELL STRUCTURES/, Applied physics letters, 71(6), 1997, pp. 735-737
ELECTROLUMINESCENCE OF GAINSB GASB STRAINED SINGLE-QUANTUM-WELL STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY/
Authors: BARANOV AN CUMINAL Y BOISSIER G NICOLAS JC LAZZARI JL ALIBERT C JOULLIE A
Citation: An. Baranov et al., ELECTROLUMINESCENCE OF GAINSB GASB STRAINED SINGLE-QUANTUM-WELL STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY/, Semiconductor science and technology, 11(8), 1996, pp. 1185-1188
HIGH-SENSITIVITY 2.5 MU-M PHOTODIODES WITH METASTABLE GAINASSB ABSORBING LAYER
Authors: MEBARKI M AITKACI H LAZZARI JL SEGURAFOUILLANT C JOULLIE A LLINARES C SALESSE I
Citation: M. Mebarki et al., HIGH-SENSITIVITY 2.5 MU-M PHOTODIODES WITH METASTABLE GAINASSB ABSORBING LAYER, Solid-state electronics, 39(1), 1996, pp. 39-41
LOW-THRESHOLD LASER-DIODES BASED ON TYPE-II GAINASSB GASB QUANTUM-WELLS OPERATING AT 2.36 MU-M AT ROOM-TEMPERATURE/
Authors: BARANOV AN CUMINAL Y BOISSIER G ALIBERT C JOULLIE A
Citation: An. Baranov et al., LOW-THRESHOLD LASER-DIODES BASED ON TYPE-II GAINASSB GASB QUANTUM-WELLS OPERATING AT 2.36 MU-M AT ROOM-TEMPERATURE/, Electronics Letters, 32(24), 1996, pp. 2279-2280
STRAINED INAS GA0.47IIN0.53AS QUANTUM-WELL HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY FOR LONG-WAVELENGTH LASER APPLICATIONS/
Authors: TOURNIE E GRUNBERG P FOUILLANT C BARANOV A JOULLIE A PLOOG KH
Citation: E. Tournie et al., STRAINED INAS GA0.47IIN0.53AS QUANTUM-WELL HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY FOR LONG-WAVELENGTH LASER APPLICATIONS/, Solid-state electronics, 37(4-6), 1994, pp. 1311-1314
HIGH-POWER LOW-THRESHOLD GA0.88IN0.12AS0.10SB0.90 AL0.47GA0.53AS0.04SB0.96 DOUBLE-HETEROSTRUCTURE LASER GROWN BY LIQUID-PHASE EPITAXY/
Authors: GRUNBERG P BARANOV A FOUILLANT C LAZZARI JL GRECH P BOISSIER G ALIBERT C JOULLIE A
Citation: P. Grunberg et al., HIGH-POWER LOW-THRESHOLD GA0.88IN0.12AS0.10SB0.90 AL0.47GA0.53AS0.04SB0.96 DOUBLE-HETEROSTRUCTURE LASER GROWN BY LIQUID-PHASE EPITAXY/, Electronics Letters, 30(4), 1994, pp. 312-313
HIGH-POWER LOW-THRESHOLD GA0.88IN0.12AS0.10SB0.90 AL0.47GA0.53AS0.04SB0.96 (VOL 30, PG 312, 1994)
Authors: GRUNBERG P BARANOV A FOUILLANT C LAZZARI JL GRECH P BOISSIER G ALIBERT C JOULLIE A
Citation: P. Grunberg et al., HIGH-POWER LOW-THRESHOLD GA0.88IN0.12AS0.10SB0.90 AL0.47GA0.53AS0.04SB0.96 (VOL 30, PG 312, 1994), Electronics Letters, 30(18), 1994, pp. 1552-1552
HIGH-TEMPERATURE OPERATION OF GAINASSB ALGAASSB DOUBLE-HETEROSTRUCTURE LASERS EMITTING NEAR 2.1 MU-M/
Authors: BARANOV AN FOUILLANT C GRUNBERG P LAZZARI JL JOULLIE A
Citation: An. Baranov et al., HIGH-TEMPERATURE OPERATION OF GAINASSB ALGAASSB DOUBLE-HETEROSTRUCTURE LASERS EMITTING NEAR 2.1 MU-M/, Applied physics letters, 65(5), 1994, pp. 616-617
DETERMINATION OF THE OPTICAL AND THERMAL-PROPERTIES OF SEMICONDUCTORSWITH THE PHOTOTHERMAL METHOD
Authors: YACOUBI N HAFAIEDH A JOULLIE A
Citation: N. Yacoubi et al., DETERMINATION OF THE OPTICAL AND THERMAL-PROPERTIES OF SEMICONDUCTORSWITH THE PHOTOTHERMAL METHOD, Applied optics, 33(30), 1994, pp. 7171-7174
CHARACTERIZATION BELOW THRESHOLD OF GAINA SSB GAALASSB DOUBLE-HETEROSTRUCTURE LASERS EMITTING NEAR 2.37 MU-M/
Authors: LECLERCQ JL GRUNBERG P BOISSIER G FOUILLANT C SADIK S MARTIN P LAZZARI JL JOULLIE AM JOULLIE A
Citation: Jl. Leclercq et al., CHARACTERIZATION BELOW THRESHOLD OF GAINA SSB GAALASSB DOUBLE-HETEROSTRUCTURE LASERS EMITTING NEAR 2.37 MU-M/, Journal de physique. III, 3(10), 1993, pp. 1963-1979
STRAINED INAS ALXGA0.48-XIN0.52AS HETEROSTRUCTURES - A TUNABLE QUANTUM-WELL MATERIALS SYSTEM FOR LIGHT-EMISSION FROM THE NEAR-IR TO THE MID-IR/
Authors: TOURNIE E PLOOG KH GRUNBERG P KADRET S JOULLIE A DAIMINGER F BUTOV L FORCHEL A
Citation: E. Tournie et al., STRAINED INAS ALXGA0.48-XIN0.52AS HETEROSTRUCTURES - A TUNABLE QUANTUM-WELL MATERIALS SYSTEM FOR LIGHT-EMISSION FROM THE NEAR-IR TO THE MID-IR/, Materials science & engineering. B, Solid-state materials for advanced technology, 21(2-3), 1993, pp. 288-292
CHARACTERIZATION OF OHMIC CONTACTS ON N-TYPE AND P-TYPE GASB
Authors: VILLEMAIN E GAILLARD S ROLLAND M JOULLIE A
Citation: E. Villemain et al., CHARACTERIZATION OF OHMIC CONTACTS ON N-TYPE AND P-TYPE GASB, Materials science & engineering. B, Solid-state materials for advanced technology, 20(1-2), 1993, pp. 162-164
CRITICAL LAYER THICKNESS IN ALGAASSB GASB HETEROSTRUCTURES DETERMINEDBY X-RAY-DIFFRACTION/
Authors: LAZZARI JL FOUILLANT C GRUNBERG P LECLERCQ JL JOULLIE A SCHILLER C
Citation: Jl. Lazzari et al., CRITICAL LAYER THICKNESS IN ALGAASSB GASB HETEROSTRUCTURES DETERMINEDBY X-RAY-DIFFRACTION/, Journal of crystal growth, 130(1-2), 1993, pp. 96-100
LONG-WAVELENGTH STRAINED-LAYER INAS GAINAS SINGLE-QUANTUM-WELL LASER GROWN BY MOLECULAR-BEAM EPITAXY ON INP SUBSTRATE/
Authors: TOURNIE E GRUNBERG P FOUILLANT C KADRET S BOISSIER G BARANOV A JOULLIE A GAUMONTGOARIN E PLOOG KH
Citation: E. Tournie et al., LONG-WAVELENGTH STRAINED-LAYER INAS GAINAS SINGLE-QUANTUM-WELL LASER GROWN BY MOLECULAR-BEAM EPITAXY ON INP SUBSTRATE/, Electronics Letters, 29(14), 1993, pp. 1255-1257
Risultati: 1-15 |