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Results: 1-9 |
Results: 9
Atomistic modeling of the effects of dose and implant temperature on dopant diffusion and amorphization in Si
Authors: Pelaz, L Marques, LA Gilmer, GH Jaraiz, M Barbolla, J
Citation: L. Pelaz et al., Atomistic modeling of the effects of dose and implant temperature on dopant diffusion and amorphization in Si, NUCL INST B, 180, 2001, pp. 12-16
Algorithm for statistical noise reduction in three-dimensional ion implantsimulations
Authors: Hernandez-Mangas, JM Arias, J Jaraiz, M Bailon, L Barbolla, J
Citation: Jm. Hernandez-mangas et al., Algorithm for statistical noise reduction in three-dimensional ion implantsimulations, NUCL INST B, 174(4), 2001, pp. 433-438
Kinetic Monte Carlo simulations: an accurate bridge between ab initio calculations and standard process experimental data
Authors: Jaraiz, M Rubio, E Castrillo, P Pelaz, L Bailon, L Barbolla, J Gilmer, GH Rafferty, CS
Citation: M. Jaraiz et al., Kinetic Monte Carlo simulations: an accurate bridge between ab initio calculations and standard process experimental data, MAT SC S PR, 3(1-2), 2000, pp. 59-63
Simulation of defects and diffusion phenomena in silicon
Authors: Law, ME Gilmer, GH Jaraiz, M
Citation: Me. Law et al., Simulation of defects and diffusion phenomena in silicon, MRS BULL, 25(6), 2000, pp. 45-50
Cluster ripening and transient enhanced diffusion in silicon
Authors: Cowern, NEB Mannino, G Stolk, PA Roozeboom, F Huizing, HGA van Berkum, JGM Cristiano, F Claverie, A Jaraiz, M
Citation: Neb. Cowern et al., Cluster ripening and transient enhanced diffusion in silicon, MAT SC S PR, 2(4), 1999, pp. 369-376
Energetics of self-interstitial clusters in Si
Authors: Cowern, NEB Mannino, G Stolk, PA Roozeboom, F Huizing, HGA van Berkum, JGM Cristiano, F Claverie, A Jaraiz, M
Citation: Neb. Cowern et al., Energetics of self-interstitial clusters in Si, PHYS REV L, 82(22), 1999, pp. 4460-4463
Activation and deactivation of implanted B in Si
Authors: Pelaz, L Venezia, VC Gossmann, HJ Gilmer, GH Fiory, AT Rafferty, CS Jaraiz, M Barbolla, J
Citation: L. Pelaz et al., Activation and deactivation of implanted B in Si, APPL PHYS L, 75(5), 1999, pp. 662-664
B cluster formation and dissolution in Si: A scenario based on atomistic modeling
Authors: Pelaz, L Gilmer, GH Gossmann, HJ Rafferty, CS Jaraiz, M Barbolla, J
Citation: L. Pelaz et al., B cluster formation and dissolution in Si: A scenario based on atomistic modeling, APPL PHYS L, 74(24), 1999, pp. 3657-3659
Modeling of the effects of dose, dose rate, and implant temperature on transient enhanced diffusion
Authors: Pelaz, L Gilmer, GH Venezia, VC Gossmann, HJ Jaraiz, M Barbolla, J
Citation: L. Pelaz et al., Modeling of the effects of dose, dose rate, and implant temperature on transient enhanced diffusion, APPL PHYS L, 74(14), 1999, pp. 2017-2019
Risultati: 1-9 |