Authors: Jaussaud, C Paisse, O Faure, R

Citation: C. Jaussaud et al., Photocatalysed degradation of uracil in aqueous titanium dioxide suspensions: mechanisms, pH and cadmium chloride effects, J PHOTOCH A, 130(2-3), 2000, pp. 157-162

Authors: Neyret, E Ferro, G Juillaguet, S Bluet, JM Jaussaud, C Camassel, J

Citation: E. Neyret et al., Optical investigation of residual doping species in 6H and 4H-SIC layers grown by chemical vapor deposition, MAT SCI E B, 61-2, 1999, pp. 253-257

Authors: Gimbert, J Billon, T Ouisse, T Grisolia, J Ben-Assayag, G Jaussaud, C

Citation: J. Gimbert et al., Nitrogen implantation in 4H and 6H-SiC, MAT SCI E B, 61-2, 1999, pp. 368-372

Authors: Hugonnard-Bruyere, E Lauer, V Guillot, G Jaussaud, C

Citation: E. Hugonnard-bruyere et al., Deep level defects in H+ implanted 6H-SiC epilayers and in silicon carbideon insulator structures, MAT SCI E B, 61-2, 1999, pp. 382-388

Authors: Royet, AS Ouisse, T Billon, T Jaussaud, C Cabon, B

Citation: As. Royet et al., Electrical noise used as a tool for assessing the defectivity of SiC Schottky diodes, MAT SCI E B, 61-2, 1999, pp. 402-405

Authors: Lanois, F Planson, D Locatelli, ML Lassagne, P Jaussaud, C Chante, JP

Citation: F. Lanois et al., Chemical contribution of oxygen to silicon carbide plasma etching kineticsin a distributed electron cyclotron resonance (DECR) reactor, J ELEC MAT, 28(3), 1999, pp. 219-224