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Results:
1-12
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Results: 12
Authors:
Gerardi, C
Giannini, C
De Caro, L
Tapfer, L
Rouillard, Y
Jenichen, B
Daweritz, L
Ploog, KH
Citation: C. Gerardi et al., Secondary-ion-mass spectrometry and high-resolution x-ray diffraction analyses of GaSb-AlGaSb heterostructures grown by molecular beam epitaxy, J VAC SCI B, 19(3), 2001, pp. 836-842
Authors:
Jenichen, B
Citation: B. Jenichen, X-ray investigations of III-V compounds: layers, nanostructures, surfaces, MAT SCI E B, 80(1-3), 2001, pp. 81-86
Authors:
Kaganer, VM
Jenichen, B
Ploog, KH
Citation: Vm. Kaganer et al., Crystal optics elements in a coherent x-ray scattering experiment, J PHYS D, 34(4), 2001, pp. 645-659
Authors:
Jenichen, B
Kaganer, VM
Riedel, A
Kostial, H
Gong, Q
Hey, R
Friedland, K
Ploog, KH
Citation: B. Jenichen et al., Deformations in (Al,Ga)As epitaxial layers wafer bonded on dissimilar substrates, J APPL PHYS, 89(4), 2001, pp. 2173-2178
Authors:
Kaganer, VM
Jenichen, B
Ploog, KH
Citation: Vm. Kaganer et al., Bragg diffraction in a coherent X-ray scattering experiment, PHYSICA B, 283(1-3), 2000, pp. 268-272
Authors:
Kaganer, VM
Albrecht, M
Hirnet, A
Gierer, M
Moritz, W
Jenichen, B
Ploog, KH
Citation: Vm. Kaganer et al., Solving the phase problem in surface crystallography: Indirect excitation via a bulk reflection, PHYS REV B, 61(24), 2000, pp. R16355-R16358
Authors:
Kaganer, VM
Jenichen, B
Schippan, F
Braun, W
Daweritz, L
Ploog, KH
Citation: Vm. Kaganer et al., Strain-mediated phase coexistence in heteroepitaxial films, PHYS REV L, 85(2), 2000, pp. 341-344
Authors:
Lubbert, D
Jenichen, B
Baumbach, T
Grahn, HT
Paris, G
Mazuelas, A
Kojima, T
Arai, S
Citation: D. Lubbert et al., Elastic stress relaxation in GaInAsP quantum wires on InP, J PHYS D, 32(10A), 1999, pp. A21-A25
Authors:
Rouillard, Y
Jenichen, B
Daweritz, L
Ploog, K
Gerardi, C
Giannini, C
De Caro, L
Tapfer, L
Citation: Y. Rouillard et al., MBE growth and characterisation of Al(x)Ga(1-x)Sblayers on GaSb substrates, J CRYST GR, 204(3), 1999, pp. 263-269
Structural properties of GaN epilayers directly grown on on-axis 6H-SiC(0001) by plasma-assisted MBE
Authors:
Trampert, A
Brandt, O
Yang, B
Jenichen, B
Ploog, KH
Citation: A. Trampert et al., Structural properties of GaN epilayers directly grown on on-axis 6H-SiC(0001) by plasma-assisted MBE, J CRYST GR, 202, 1999, pp. 407-410
Authors:
Mullhauser, JR
Brandt, O
Trampert, A
Jenichen, B
Ploog, KH
Citation: Jr. Mullhauser et al., Green photoluminescence from cubic In0.4Ga0.6N grown by radio frequency plasma-assisted molecular beam epitaxy, APPL PHYS L, 73(9), 1998, pp. 1230-1232
Authors:
Yang, B
Trampert, A
Jenichen, B
Brandt, O
Ploog, KH
Citation: B. Yang et al., Structural characterization of thin GaN epilayers directly grown on on-axis 6H-SiC(0001) by plasma-assisted molecular beam epitaxy, APPL PHYS L, 73(26), 1998, pp. 3869-3871
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