Authors: Aggarwal, S Nagaraj, B Jenkins, IG Li, H Sharma, RP Salamanca-Riba, L Ramesh, R Dhote, AM Krauss, AR Auciello, O

Citation: S. Aggarwal et al., Correlation between oxidation resistance and crystallinity of Ti-Al as a barrier layer for high-density memories, ACT MATER, 48(13), 2000, pp. 3387-3394

Authors: Aggarwal, S Ganpule, C Jenkins, IG Nagaraj, B Stanishevsky, A Melngailis, J Williams, E Ramesh, R

Citation: S. Aggarwal et al., High density ferroelectric memories: Materials, processing and scaling, INTEGR FERR, 29(1-2), 2000, pp. 213-225

Authors: Aggarwal, S Jenkins, IG Nagaraj, B Canedy, C Ramesh, R Velasquez, G Boyer, L Evans, JT

Citation: S. Aggarwal et al., Conducting diffusion barriers for integration of ferroelectric capacitors on Si, INTEGR FERR, 25(1-4), 1999, pp. 545-561

Authors: Nagarajan, V Jenkins, IG Alpay, SP Li, H Aggarwal, S Salamanca-Riba, L Roytburd, AL Ramesh, R

Citation: V. Nagarajan et al., Thickness dependence of structural and electrical properties in epitaxial lead zirconate titanate films, J APPL PHYS, 86(1), 1999, pp. 595-602

Authors: Aggarwal, S Madhukar, S Nagaraj, B Jenkins, IG Ramesh, R Boyer, L Evans, JT

Citation: S. Aggarwal et al., Can lead nonstoichiometry influence ferroelectric properties of Pb(Zr,Ti)O-3 thin films?, APPL PHYS L, 75(5), 1999, pp. 716-718

Authors: Aggarwal, S Jenkins, IG Nagaraj, B Kerr, CJ Canedy, C Ramesh, R Velasquez, G Boyer, L Evans, JT

Citation: S. Aggarwal et al., Switching properties of Pb(Nb, Zr, Ti)O-3 capacitors using SrRuO3 electrodes, APPL PHYS L, 75(12), 1999, pp. 1787-1789