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Results:
1-16
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Results: 16
Authors:
Jogai, B
Citation: B. Jogai, Three-dimensional strain field calculations in multiple InN/AlN wurtzite quantum dots, J APPL PHYS, 90(2), 2001, pp. 699-704
Authors:
Reynolds, DC
Look, DC
Jogai, B
Citation: Dc. Reynolds et al., Fine structure on the green band in ZnO, J APPL PHYS, 89(11), 2001, pp. 6189-6191
Authors:
Reynolds, DC
Look, DC
Jogai, B
Molnar, RJ
Citation: Dc. Reynolds et al., Evidence for shallow acceptors in GaN, J APPL PHYS, 89(11), 2001, pp. 6272-6274
Authors:
Reynolds, DC
Look, DC
Jogai, B
Collins, TC
Citation: Dc. Reynolds et al., Polariton and free-exciton-like photoluminescence in ZnO, APPL PHYS L, 79(23), 2001, pp. 3794-3796
Authors:
Jogai, B
Citation: B. Jogai, Absorption coefficient of wurtzite GaN calculated from an empirical tight binding model, SOL ST COMM, 116(3), 2000, pp. 153-157
Authors:
Jogai, B
Citation: B. Jogai, Three-dimensional strain field calculations in coupled InAs/GaAs quantum dots, J APPL PHYS, 88(9), 2000, pp. 5050-5055
Authors:
Sherriff, RE
Reynolds, DC
Look, DC
Jogai, B
Hoelscher, JE
Collins, TC
Cantwell, G
Harsch, WC
Citation: Re. Sherriff et al., Photoluminescence measurements from the two polar faces of ZnO, J APPL PHYS, 88(6), 2000, pp. 3454-3457
Authors:
Reynolds, DC
Look, DC
Jogai, B
Hoelscher, JE
Sherriff, RE
Harris, MT
Callahan, MJ
Citation: Dc. Reynolds et al., Time-resolved photoluminescence lifetime measurements of the Gamma(5) and Gamma(6) free excitons in ZnO, J APPL PHYS, 88(4), 2000, pp. 2152-2153
Authors:
Reynolds, DC
Look, DC
Jogai, B
Hoelscher, JE
Sherriff, RE
Molnar, RJ
Citation: Dc. Reynolds et al., Strain variation with sample thickness in GaN grown by hydride vapor phaseepitaxy, J APPL PHYS, 88(3), 2000, pp. 1460-1463
Authors:
Reynolds, DC
Look, DC
Jogai, B
Citation: Dc. Reynolds et al., Combined effects of screening and band gap renormalization on the energy of optical transitions in ZnO and GaN, J APPL PHYS, 88(10), 2000, pp. 5760-5763
Authors:
Reynolds, DC
Look, DC
Jogai, B
Saxler, AW
Park, SS
Hahn, JY
Citation: Dc. Reynolds et al., Identification of the Gamma(5) and Gamma(6) free excitons in GaN, APPL PHYS L, 77(18), 2000, pp. 2879-2881
Authors:
Reynolds, DC
Look, DC
Jogai, B
Litton, CW
Cantwell, G
Harsch, WC
Citation: Dc. Reynolds et al., Valence-band ordering in ZnO, PHYS REV B, 60(4), 1999, pp. 2340-2344
Authors:
Reynolds, DC
Look, DC
Jogai, B
Litton, CW
Cantwell, G
Harsch, WC
Citation: Dc. Reynolds et al., Determination of defect pair orientation in ZnO, SOL ST COMM, 109(6), 1999, pp. 419-422
Authors:
Reynolds, DC
Look, DC
Jogai, B
Jones, RL
Litton, CW
Harsch, W
Cantwell, G
Citation: Dc. Reynolds et al., Optical properties of ZnO crystals containing internal strains, J LUMINESC, 82(2), 1999, pp. 173-176
Authors:
Reynolds, DC
Look, DC
Jogai, B
Litton, CW
Collins, TC
Harris, MT
Callahan, MJ
Bailey, JS
Citation: Dc. Reynolds et al., Strain splitting of the Gamma(5) and Gamma(6) free excitons in ZnO, J APPL PHYS, 86(10), 1999, pp. 5598-5600
Authors:
Reynolds, DC
Look, DC
Jogai, B
Litton, CW
Collins, TC
Harsch, W
Cantwell, G
Citation: Dc. Reynolds et al., Neutral-donor-bound-exciton complexes in ZnO crystals (vol 57, pg 12 151, 1998), PHYS REV B, 58(19), 1998, pp. 13276-13276
Risultati:
1-16
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