Authors: BAUMGARTNER H KAESEN F GOSSNER H EISELE I

Citation: H. Baumgartner et al., FORMATION OF SINGLE-CRYSTALLINE SILICON NANOSTRUCTURES BY SELF-ASSEMBLING GROWTH WITH MOLECULAR-BEAM EPITAXY, Applied surface science, 132, 1998, pp. 747-754

Authors: KAESEN F HANSCH W EISELE I KALUS M

Citation: F. Kaesen et al., QUANTUM-WIRE TRANSISTOR AT LOCALLY GROWN EDGES, Thin solid films, 321, 1998, pp. 106-110

Authors: HANSCH W RAO VR FINK C KAESEN F EISELE I

Citation: W. Hansch et al., ELECTRIC-FIELD TAILORING IN MBE-GROWN VERTICAL SUB-100 NM MOSFETS, Thin solid films, 321, 1998, pp. 206-214

Authors: STRASS A HANSCH W KAESEN F FEHLAUER G BIERINGER P FISCHER A EISELE I

Citation: A. Strass et al., LOW-TEMPERATURE ELECTRICAL SURFACE PASSIVATION OF MBE-GROWN PIN DIODES BY HYDROGEN AND OXYGEN PLASMA PROCESSES, Thin solid films, 321, 1998, pp. 261-264

Authors: STRASS A HANSCH W BIERINGER P NEUBECKER A KAESEN F FISCHER A EISELE I

Citation: A. Strass et al., ETCHING CHARACTERISTICS OF SI AND SIO2 WITH A LOW-ENERGY ARGON HYDROGEN DC PLASMA SOURCE/, Surface & coatings technology, 97(1-3), 1997, pp. 158-162

Authors: RUPP T KAESEN F HANSCH W HAMMERL E GRAVESTEIJN DJ SCHORER R SILVEIRA E ABSTREITER G EISELE I

Citation: T. Rupp et al., DEFECT-FREE STRAIN RELAXATION IN LOCALLY MBE-GROWN SIGE HETEROSTRUCTURES, Thin solid films, 294(1-2), 1997, pp. 27-32