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Results: 1-7 |
Results: 7
SOLID-STATE PHOTOCYCLIZATION OF ,4,6-TRIISOPROPYL-4'-(METHOXYCARBONYL)BENZOPHENONE - EVIDENCE FOR A NARROW REACTION CAVITY AND A PHOTOENOL DIRADICAL INTERMEDIATE
Authors: ITO Y YASUI S YAMAUCHI J OHBA S KANO G
Citation: Y. Ito et al., SOLID-STATE PHOTOCYCLIZATION OF ,4,6-TRIISOPROPYL-4'-(METHOXYCARBONYL)BENZOPHENONE - EVIDENCE FOR A NARROW REACTION CAVITY AND A PHOTOENOL DIRADICAL INTERMEDIATE, The journal of physical chemistry. A, Molecules, spectroscopy, kinetics, environment, & general theory, 102(28), 1998, pp. 5415-5420
DIASTEREOSELECTIVE PHOTOCYCLIZATION OF 2,4,6-TRIISOPROPYLBENZOYL)BENZOYL)-L-PHENYLALANINE METHYL-ESTER IN THE SOLID-STATE
Authors: ITO Y KANO G NAKAMURA N
Citation: Y. Ito et al., DIASTEREOSELECTIVE PHOTOCYCLIZATION OF 2,4,6-TRIISOPROPYLBENZOYL)BENZOYL)-L-PHENYLALANINE METHYL-ESTER IN THE SOLID-STATE, Journal of organic chemistry, 63(16), 1998, pp. 5643-5647
NONVOLATILE MEMORIES USING SRBI2TA2O9 FERROELECTRICS
Authors: JONES RE CHU PY JIANG B MELNICK BM TAYLOR DJ WHITE BE ZAFAR S PRICE D ZURCHER P GILLESPIE SJ OTSUKI T SUMI T JUDAI Y UEMOTO Y FUJII E HAYASHI S MORIWAKI N AZUMA M SHIMADA Y ARITA K HIRANO H NAKANE J NAKAKUM T KANO G
Citation: Re. Jones et al., NONVOLATILE MEMORIES USING SRBI2TA2O9 FERROELECTRICS, Integrated ferroelectrics, 17(1-4), 1997, pp. 21-30
IMPORTANCE OF BINDING STATES BETWEEN PHOTOSENSITIZING MOLECULES AND THE TIO2 SURFACE FOR EFFICIENCY IN A DYE-SENSITIZED SOLAR-CELL
Authors: MURAKOSHI K KANO G WADA Y YANAGIDA S MIYAZAKI H MATSUMOTO M MURASAWA S
Citation: K. Murakoshi et al., IMPORTANCE OF BINDING STATES BETWEEN PHOTOSENSITIZING MOLECULES AND THE TIO2 SURFACE FOR EFFICIENCY IN A DYE-SENSITIZED SOLAR-CELL, Journal of electroanalytical chemistry [1992], 396(1-2), 1995, pp. 27-34
256KB FERROELECTRIC NONVOLATILE MEMORY TECHNOLOGY FOR 1T 1C CELL WITH100NS READ/WRITE TIME AT 3V/
Authors: SUMI T MORIWAKI N NAKANE G NAKAKUMA T JUDAI Y UEMOTO Y NAGANO Y HAYASHI S AZUMA M OTSUKI T KANO G CUCHIARO JD SCOTT MC MCMILLAN LD DEARAUJO CAP
Citation: T. Sumi et al., 256KB FERROELECTRIC NONVOLATILE MEMORY TECHNOLOGY FOR 1T 1C CELL WITH100NS READ/WRITE TIME AT 3V/, Integrated ferroelectrics, 6(1-4), 1995, pp. 1-13
APPLICATION OF FERROELECTRIC THIN-FILMS TO SI DEVICES
Authors: ARITA K FUJII E SHIMADA Y UEMOTO Y AZUMA M HAYASHI S NASU T INOUE A MATSUDA A NAGANO Y KATSU S OTSUKI T KANO G MCMILLAN LD DEARAUJO CAP
Citation: K. Arita et al., APPLICATION OF FERROELECTRIC THIN-FILMS TO SI DEVICES, IEICE transactions on electronics, E77C(3), 1994, pp. 392-398
A BICMOS ANALOG NEURAL NETWORK WITH DYNAMICALLY UPDATED WEIGHTS
Authors: MORISHITA T TAMURA Y OTSUKI T KANO G
Citation: T. Morishita et al., A BICMOS ANALOG NEURAL NETWORK WITH DYNAMICALLY UPDATED WEIGHTS, IEICE transactions on electronics, E75C(3), 1992, pp. 297-302
Risultati: 1-7 |