Authors: KHRENOV G RYZHII V KARTASHOV S

Citation: G. Khrenov et al., FOURIER ANALYSIS-BASED METHOD FOR HIGH-FREQUENCY PERFORMANCE CALCULATION OF HETEROJUNCTION BIPOLAR-TRANSISTOR, JPN J A P 1, 33(8), 1994, pp. 4550-4554

Authors: KHRENOV G RYZHII V KARTASHOV S

Citation: G. Khrenov et al., A NUMERICAL-MODEL OF HETEROJUNCTION BIPOLAR-TRANSISTOR HIGH-FREQUENCYPERFORMANCE FOR DEVICE DESIGN, Compel, 13(4), 1994, pp. 671-676

Authors: KHRENOV G RYZHII V KARTASHOV S

Citation: G. Khrenov et al., MONTE-CARLO MODELING OF HOT-ELECTRON RELAXATION IN THE BASE REGION OFALINAS GAINAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, Semiconductor science and technology, 9(3), 1994, pp. 329-332

Authors: KHRENOV G RYZHII V KARTASHOV S

Citation: G. Khrenov et al., ALGAAS GAAS HBT COLLECTOR OPTIMIZATION FOR HIGH-FREQUENCY PERFORMANCE, Solid-state electronics, 37(1), 1994, pp. 213-214