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Results: 1-14 |
Results: 14

Authors: KASHERININOV PG LODYGIN AN
Citation: Pg. Kasherininov et An. Lodygin, DOSIMETER FOR REAL-TIME MONITORING OF NUCLEAR RADIATION ENERGY (DOSE)USING A METAL-GAS-INSULATOR-SEMICONDUCTOR STRUCTURE, Technical physics letters, 24(11), 1998, pp. 893-895

Authors: KASHERININOV PG MATYUKHIN DG
Citation: Pg. Kasherininov et Dg. Matyukhin, IDENTIFYING THE PARAMETERS OF IMPURITY LEVELS IN HIGH-RESISTANCE SEMICONDUCTOR CRYSTALS BY MEANS OF THERMALLY STIMULATED CURRENTS WITH DOSED ILLUMINATION OF THE SAMPLES, Semiconductors (Woodbury, N.Y.), 32(6), 1998, pp. 599-602

Authors: KASHERININOV PG LODYGIN AN
Citation: Pg. Kasherininov et An. Lodygin, NEW SEMICONDUCTOR-DEVICES BASED ON A SPECIAL METAL-INSULATOR-SEMICONDUCTOR STRUCTURE FOR MEASURING THE ENERGY (DOSE) OF ELECTROMAGNETIC ANDNUCLEAR RADIATION, Technical physics letters, 23(2), 1997, pp. 137-139

Authors: ZELENIN IA KASHERININOV PG KHARTSIEV VE
Citation: Ia. Zelenin et al., NEW DEVICES FOR THE CONTROL OF LASER-EMIS SION ENERGY, Pis'ma v Zurnal tehniceskoj fiziki, 22(5), 1996, pp. 86-91

Authors: KASHERININOV PG KICHAEV AV TOMASOV AA
Citation: Pg. Kasherininov et al., PHOTOELECTRIC PHENOMENA IN STRUCTURES BASED ON HIGH-RESISTIVITY SEMICONDUCTOR CRYSTALS WITH A THIN INSULATOR LAYER AT THE SEMICONDUCTOR-METAL BOUNDARY, Semiconductors, 29(11), 1995, pp. 1092-1099

Authors: KASHERININOV PG MATYUKHIN DG YAROSHETSKII ID
Citation: Pg. Kasherininov et al., PHOTOELECTRICAL PHENOMENA IN STRUCTURES W ITH SEMICONDUCTOR THIN DIELECTRIC INTERFACE ON HIGH-RESISTANCE CRYSTALS WITH DEEP ADMIXED LEVELS, Pis'ma v Zurnal tehniceskoj fiziki, 21(7), 1995, pp. 44-49

Authors: KASHERININOV PG MATYUKHIN DG
Citation: Pg. Kasherininov et Dg. Matyukhin, COMPLETE IDENTIFICATION OF ADMIXED LEVEL PARAMETERS IN HIGH-VOLTAGE SEMICONDUCTING CRYSTALS USING THE THERMOSTIMULATED CURRENT METHOD DUE TO DOSED ILLUMINATION OF SAMPLES, Pis'ma v Zurnal tehniceskoj fiziki, 21(18), 1995, pp. 56-60

Authors: KASHERININOV PG KICHAEV AV YAROSHETSKII ID
Citation: Pg. Kasherininov et al., PHOTOELECTRICAL PHENOMENA IN STRUCTURES W ITH SEMICONDUCTOR-DIELECTRIC THIN-LAYER INTERFACE ON HIGH-RESISTANCE COMPENSATED CRYSTALS, Zurnal tehniceskoj fiziki, 65(9), 1995, pp. 193-197

Authors: KASHERININOV PG MEZDROGINA MM YAROSHETSKII ID
Citation: Pg. Kasherininov et al., SEMICONDUCTING HETEROSTRUCTURE OF ELECTRO OPTICAL-NONELECTROOPTICAL CRYSTAL ON HYDRATED SILICON-CADMIUM TELLURIDE SYSTEM, Pis'ma v Zurnal tehniceskoj fiziki, 20(8), 1994, pp. 24-29

Authors: KASHERININOV PG KICHAEV AV TOMASOV AA YAROSHETSKII ID
Citation: Pg. Kasherininov et al., PHOTOELECTRIC PHENOMENA IN SEMICONDUCTOR- DIELECTRIC THIN-LAYER INTERFACE STRUCTURE ON HIGH OHMIC PURE-CRYSTALS, Pis'ma v Zurnal tehniceskoj fiziki, 20(18), 1994, pp. 16-21

Authors: KASHERININOV PG KICHAEV AV KUZMIN SL MEZDROGINA MM YAROSHETSKII ID
Citation: Pg. Kasherininov et al., FAST NONLINEAR-OPTICAL MEDIA ON ELECTROOP TICAL-NONELECTRICAL CRYSTAL(CDTE-ALPHA-SI) HETEROSTRUCTURES, Pis'ma v Zurnal tehniceskoj fiziki, 19(9), 1993, pp. 47-50

Authors: KASHERININOV PG KICHAEV AV KUZMIN SL YAROSHETSKII ID
Citation: Pg. Kasherininov et al., SEMICONDUCTING PHOTOSENSOR WITH LIGHT-CON TROLLED PHOTO-SENSITIVE DOMAIN, Pis'ma v Zurnal tehniceskoj fiziki, 19(9), 1993, pp. 51-54

Authors: KASHERININOV PG KICHAEV AV KHARTSIEV VE KUZMIN SL YAROSHCHETSKII ID
Citation: Pg. Kasherininov et al., LIGHT-CONTROLLED OPTICAL COMMUTATION DEVI CES ON HIGH-RESISTANCE SEMICONDUCTING STRUCTURES, Pis'ma v Zurnal tehniceskoj fiziki, 19(9), 1993, pp. 55-58

Authors: KASHERININOV PG KICHAEV AV YAROSHETSKII ID
Citation: Pg. Kasherininov et al., DISTRIBUTION OF ELECTRIC-FIELD TENSION IN HIGH-RESISTANCE MSM AND MDSSTRUCTURES UNDER ILLUMINATION, Pis'ma v Zurnal tehniceskoj fiziki, 19(17), 1993, pp. 49-54
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