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Results: 1-25/28
Authors:
GOLDMAN RS
KAVANAGH KL
WIEDER HH
EHRLICH SN
FEENSTRA RM
Citation: Rs. Goldman et al., EFFECTS OF GAAS SUBSTRATE MISORIENTATION ON STRAIN RELAXATION IN INXGA1-XAS FILMS AND MULTILAYERS, Journal of applied physics, 83(10), 1998, pp. 5137-5149
Authors:
KAVANAGH KL
ZAERR JB
Citation: Kl. Kavanagh et Jb. Zaerr, XYLEM CAVITATION AND LOSS OF HYDRAULIC CONDUCTANCE IN WESTERN HEMLOCKFOLLOWING PLANTING, Tree physiology, 17(1), 1997, pp. 59-63
Authors:
KAVANAGH KL
GOLDMAN RS
LAVOIE C
LEDUC B
PINNINGTON T
TIEDJE T
KLUG D
TSE J
Citation: Kl. Kavanagh et al., IN-SITU DETECTION OF MISFIT DISLOCATIONS BY LIGHT-SCATTERING, Journal of crystal growth, 174(1-4), 1997, pp. 550-557
Authors:
KAVANAGH KL
REUTER MC
TROMP RM
Citation: Kl. Kavanagh et al., HIGH-TEMPERATURE EPITAXY OF PTSI SI(001), Journal of crystal growth, 173(3-4), 1997, pp. 393-401
Authors:
LI NY
WONG WS
TOMICH DH
KAVANAGH KL
TU CW
Citation: Ny. Li et al., TENSILE STRAIN RELAXATION IN GANXP1-X (X-LESS-THAN-OR-EQUAL-TO-0.1) GROWN BY CHEMICAL BEAM EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2952-2956
Authors:
GOLDMAN RS
KAVANAGH KL
WIEDER HH
Citation: Rs. Goldman et al., MODULATION-DOPED IN0.53GA0.47AS IN0.52AL0.48AS HETEROSTRUCTURES GROWNON GAAS SUBSTRATES USING STEP-GRADED INXGA1-XAS BUFFERS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 3035-3039
Authors:
MORGAN BA
RING KM
KAVANAGH KL
TALIN AA
WILLIAMS RS
YASUDA T
YASUI T
SEGAWA Y
Citation: Ba. Morgan et al., ROLE OF INTERFACE MICROSTRUCTURE IN RECTIFYING METAL SEMICONDUCTOR CONTACTS - BALLISTIC-ELECTRON-EMISSION OBSERVATIONS CORRELATED TO MICROSTRUCTURE/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(2), 1996, pp. 1238-1242
Authors:
MORGAN BA
TALIN AA
BI WG
KAVANAGH KL
WILLIAMS RS
TU CW
YASUDA T
YASUI T
SEGAWA Y
Citation: Ba. Morgan et al., COMPARISON OF AU CONTACTS TO SI, GAAS, INXGA1-XP, AND ZNSE MEASURED BY BALLISTIC-ELECTRON-EMISSION MICROSCOPY, Materials chemistry and physics, 46(2-3), 1996, pp. 224-229
Authors:
GOLDMAN RS
KAVANAGH KL
WIEDER HH
ROBBINS VM
EHRLICH SN
FEENSTRA RM
Citation: Rs. Goldman et al., CORRELATION OF BUFFER STRAIN RELAXATION MODES WITH TRANSPORT-PROPERTIES OF 2-DIMENSIONAL ELECTRON GASES, Journal of applied physics, 80(12), 1996, pp. 6849-6854
Authors:
MORGAN BA
RING KM
KAVANAGH KL
TALIN AA
WILLIAMS RS
YASUDA T
YASUI T
SEGAWA Y
Citation: Ba. Morgan et al., AU ZNSE CONTACTS CHARACTERIZED BY BALLISTIC-ELECTRON-EMISSION MICROSCOPY/, Journal of applied physics, 79(3), 1996, pp. 1532-1535
Authors:
RICH DH
RAMMOHAN K
TANG Y
LIN HT
GOLDMAN RS
WIEDER HH
KAVANAGH KL
Citation: Dh. Rich et al., INFLUENCE OF GAAS(001) SUBSTRATE MISORIENTATION TOWARDS (111) ON THE OPTICAL-PROPERTIES OF INXGA1-XAS GAAS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1766-1772
Authors:
HERRICK RD
KAPLAN AS
CHINH BK
SHANE MJ
SAILOR MJ
KAVANAGH KL
MCCREERY RL
ZHAO J
Citation: Rd. Herrick et al., ROOM-TEMPERATURE ELECTROSYNTHESIS OF CARBONACEOUS FIBERS, Advanced materials, 7(4), 1995, pp. 398-401
Authors:
RAMMOHAN K
TANG Y
RICH DH
GOLDMAN RS
WIEDER HH
KAVANAGH KL
Citation: K. Rammohan et al., RELAXATION-INDUCED POLARIZED LUMINESCENCE FROM INXGA1-XAS FILMS GROWNON GAAS(001), Physical review. B, Condensed matter, 51(8), 1995, pp. 5033-5037
Authors:
GOLDMAN RS
WIEDER HH
KAVANAGH KL
Citation: Rs. Goldman et al., CORRELATION OF ANISOTROPIC STRAIN RELAXATION WITH SUBSTRATE MISORIENTATION DIRECTION AT INGAAS GAAS(001) INTERFACES/, Applied physics letters, 67(3), 1995, pp. 344-346
Authors:
LAVOIE C
PINNINGTON T
NODWELL E
TIEDJE T
GOLDMAN RS
KAVANAGH KL
HUTTER JL
Citation: C. Lavoie et al., RELATIONSHIP BETWEEN SURFACE-MORPHOLOGY AND STRAIN RELAXATION DURING GROWTH OF INGAAS STRAINED LAYERS, Applied physics letters, 67(25), 1995, pp. 3744-3746
Authors:
RAMMOHAN K
RICH DH
GOLDMAN RS
CHEN J
WIEDER HH
KAVANAGH KL
Citation: K. Rammohan et al., STUDY OF MU-M-SCALE SPATIAL VARIATIONS IN STRAIN OF A COMPOSITIONALLYSTEP-GRADED INXGA1-XAS GAAS(001) HETEROSTRUCTURE/, Applied physics letters, 66(7), 1995, pp. 869-871
Authors:
TALIN AA
WILLIAMS RS
MORGAN BA
RING KM
KAVANAGH KL
Citation: Aa. Talin et al., LATERAL VARIATION IN THE SCHOTTKY-BARRIER HEIGHT OF AU PTSI/(100)SI DIODES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2634-2638
Authors:
KAVANAGH KL
GOLDMAN RS
CHANG JCP
Citation: Kl. Kavanagh et al., STRAIN RELAXATION IN COMPOSITIONALLY GRADED INGAAS GAAS HETEROSTRUCTURES/, Scanning microscopy, 8(4), 1994, pp. 905-912
Authors:
RAISANEN A
BRILLSON LJ
GOLDMAN RS
KAVANAGH KL
WIEDER HH
Citation: A. Raisanen et al., STRAIN RELAXATION INDUCED DEEP LEVELS IN IN1-XGAXAS THIN-FILMS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 1050-1053
Authors:
RAISANEN A
BRILLSON LJ
GOLDMAN RS
KAVANAGH KL
WIEDER H
Citation: A. Raisanen et al., DISLOCATION-INDUCED DEEP-LEVEL STATES IN IN0.08GA0.92AS GAAS HETEROSTRUCTURES/, Journal of electronic materials, 23(9), 1994, pp. 929-933
Authors:
TALIN AA
WILLIAMS RS
MORGAN BA
RING KM
KAVANAGH KL
Citation: Aa. Talin et al., NANOMETER-RESOLVED SPATIAL VARIATIONS IN THE SCHOTTKY-BARRIER HEIGHT OF A AU N-TYPE GAAS DIODE, Physical review. B, Condensed matter, 49(23), 1994, pp. 16474-16479
Authors:
GOLDMAN RS
WIEDER HH
KAVANAGH KL
RAMMOHAN K
RICH DH
Citation: Rs. Goldman et al., ANISOTROPIC STRUCTURAL, ELECTRONIC, AND OPTICAL-PROPERTIES OF INGAAS GROWN BY MOLECULAR-BEAM EPITAXY ON MISORIENTED SUBSTRATES, Applied physics letters, 65(11), 1994, pp. 1424-1426
Authors:
TALIN AA
OHLBERG DAA
WILLIAMS RS
SULLIVAN P
KOUTSELAS I
WILLIAMS B
KAVANAGH KL
Citation: Aa. Talin et al., TIME-DEPENDENT BALLISTIC-ELECTRON-EMISSION MICROSCOPY STUDIES OF A AU(100)GAAS INTERFACE WITH A NATIVE-OXIDE DIFFUSION BARRIER (VOL 62, PG2965, 1993)/, Applied physics letters, 64(4), 1994, pp. 529-529
Authors:
RAISANEN A
BRILLSON LJ
GOLDMAN RS
KAVANAGH KL
WIEDER HH
Citation: A. Raisanen et al., OPTICAL-DETECTION OF MISFIT DISLOCATION-INDUCED DEEP LEVELS AT INGAASGAAS HETEROJUNCTIONS/, Applied physics letters, 64(26), 1994, pp. 3572-3574
Authors:
KAVANAGH KL
LEE DH
DREW AP
MAYNARD CA
Citation: Kl. Kavanagh et al., THE EFFECTS OF GA(3) AND ORGANIC-SOLVENTS ON ACCLIMATIZATION OF TISSUE-CULTURE PROPAGATED BLACK-CHERRY (PRUNUS-SEROTINA EHRH) PLANTLETS, Forest science, 39(4), 1993, pp. 644-654