Authors: HIRAMATSU M KAWAKYU Y

Citation: M. Hiramatsu et Y. Kawakyu, PREPARATION OF PHOSPHORUS-DOPED MICROCRYSTALLINE SILICON BY MERCURY-SENSITIZED PHOTOCHEMICAL VAPOR-DEPOSITION PROCESS, JPN J A P 2, 36(6B), 1997, pp. 754-756

Authors: HIRAMATSU M KAWAKYU Y

Citation: M. Hiramatsu et Y. Kawakyu, MERCURY-SENSITIZED HYDROGEN RADICAL PHOTOETCHING OF HYDROGENATED AMORPHOUS-SILICON, JPN J A P 2, 35(12A), 1996, pp. 1547-1549

Authors: NISHIBE T MITSUHASHI H MATSUURA Y KAWAKYU Y

Citation: T. Nishibe et al., APPROACH TO IN-SITU CHARACTERIZATION OF POLYSILICON SURFACES ANNEALEDBY XECL EXCIMER-LASER, Applied surface science, 99(1), 1996, pp. 35-40

Authors: HIRAMATSU M ISHIDA A KAMIMURA T KAWAKYU Y

Citation: M. Hiramatsu et al., SELECTIVE DEPOSITION OF SILICON BY MERCURY SENSITIZED PHOTOCHEMICAL VAPOR-DEPOSITION, JPN J A P 1, 32(6B), 1993, pp. 3106-3108

Authors: HIRAMATSU M ISHIDA A KAMIMURA T KAWAKYU Y

Citation: M. Hiramatsu et al., THE SELECTIVE DEPOSITION OF A SILICON FILM ON HYDROGENATED AMORPHOUS-SILICON BY MERCURY SENSITIZED PHOTOCHEMICAL VAPOR-DEPOSITION, JPN J A P 2, 32(12B), 1993, pp. 120001781-120001783

Authors: MASHITA M SASAKI M KAWAKYU Y ISHIKAWA H

Citation: M. Mashita et al., SURFACE-REACTION MECHANISMS IN GAAS ATOMIC LAYER EPITAXY, Journal of crystal growth, 131(1-2), 1993, pp. 61-70