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Results: 1-14 |
Results: 14
X-RAY-SCATTERING INVESTIGATION OF A SRTIO3(103) BICRYSTAL INTERFACE
Authors: FEIDENHANSL R KAZIMIROV A SMILGIES DM JIANG QD ZEGENHAGEN J
Citation: R. Feidenhansl et al., X-RAY-SCATTERING INVESTIGATION OF A SRTIO3(103) BICRYSTAL INTERFACE, Philosophical magazine letters, 78(1), 1998, pp. 51-57
IN-SITU X-RAY STANDING-WAVE ANALYSIS OF ELECTRODEPOSITED CU MONOLAYERS ON GAAS(001)
Authors: SCHERB G KAZIMIROV A ZEGENHAGEN J LEE TL BEDZYK MJ NOGUCHI H UOSAKI K
Citation: G. Scherb et al., IN-SITU X-RAY STANDING-WAVE ANALYSIS OF ELECTRODEPOSITED CU MONOLAYERS ON GAAS(001), Physical review. B, Condensed matter, 58(16), 1998, pp. 10800-10805
ISOTOPIC MASS AND LATTICE-CONSTANT - X-RAY STANDING-WAVE MEASUREMENTS
Authors: KAZIMIROV A ZEGENHAGEN J CARDONA M
Citation: A. Kazimirov et al., ISOTOPIC MASS AND LATTICE-CONSTANT - X-RAY STANDING-WAVE MEASUREMENTS, Science, 282(5390), 1998, pp. 930-932
ELECTROCHEMICAL-CELL FOR IN-SITU X-RAY-DIFFRACTION UNDER ULTRAPURE CONDITIONS
Authors: KOOP T SCHINDLER W KAZIMIROV A SCHERB G ZEGENHAGEN J SCHULZ T FEIDENHANSL R KIRSCHNER J
Citation: T. Koop et al., ELECTROCHEMICAL-CELL FOR IN-SITU X-RAY-DIFFRACTION UNDER ULTRAPURE CONDITIONS, Review of scientific instruments, 69(4), 1998, pp. 1840-1843
A NOVEL THICK-LAYER ELECTROCHEMICAL-CELL FOR IN-SITU X-RAY-DIFFRACTION
Authors: SCHERB G KAZIMIROV A ZEGENHAGEN J
Citation: G. Scherb et al., A NOVEL THICK-LAYER ELECTROCHEMICAL-CELL FOR IN-SITU X-RAY-DIFFRACTION, Review of scientific instruments, 69(2), 1998, pp. 512-516
POLARITY DETERMINATION OF A GAN THIN-FILM ON SAPPHIRE (0001) WITH X-RAY STANDING WAVES
Authors: KAZIMIROV A SCHERB G ZEGENHAGEN J LEE TL BEDZYK MJ KELLY MK ANGERER H AMBACHER O
Citation: A. Kazimirov et al., POLARITY DETERMINATION OF A GAN THIN-FILM ON SAPPHIRE (0001) WITH X-RAY STANDING WAVES, Journal of applied physics, 84(3), 1998, pp. 1703-1705
ABNORMAL RAMAN INTENSITY ENHANCEMENT OF CU-CU VIBRATION WITH FILM THICKNESS REDUCTION IN YBACUO7-DELTA ON LASRALO4
Authors: ZHANG P HAAGE T HABERMEIER HU KAZIMIROV A RUF T CARDONA M
Citation: P. Zhang et al., ABNORMAL RAMAN INTENSITY ENHANCEMENT OF CU-CU VIBRATION WITH FILM THICKNESS REDUCTION IN YBACUO7-DELTA ON LASRALO4, Journal of alloys and compounds, 251(1-2), 1997, pp. 70-73
EXCITATION OF AN X-RAY STANDING-WAVE IN A SMBA2CU3O7-DELTA THIN-FILM
Authors: KAZIMIROV A HAAGE T ORTEGA L STIERLE A COMIN F ZEGENHAGEN J
Citation: A. Kazimirov et al., EXCITATION OF AN X-RAY STANDING-WAVE IN A SMBA2CU3O7-DELTA THIN-FILM, Solid state communications, 104(6), 1997, pp. 347-350
POTENTIAL CONTROLLED STRIPPING OF AN AMORPHOUS AS LAYER ON GAAS(001) IN AN ELECTROLYTE - AN IN-SITU X-RAY-SCATTERING STUDY
Authors: SCHERB G KAZIMIROV A ZEGENHAGEN J SCHULTZ T FEIDENHANSL R FIMLAND BO
Citation: G. Scherb et al., POTENTIAL CONTROLLED STRIPPING OF AN AMORPHOUS AS LAYER ON GAAS(001) IN AN ELECTROLYTE - AN IN-SITU X-RAY-SCATTERING STUDY, Applied physics letters, 71(20), 1997, pp. 2990-2992
PHASE-SENSITIVE MULTIPLE-DIFFRACTION STUDIES OF SINGLE-CRYSTALS
Authors: KOVALCHUK MV KAZIMIROV A KOHN V KREINES A SAMOILOVA L
Citation: Mv. Kovalchuk et al., PHASE-SENSITIVE MULTIPLE-DIFFRACTION STUDIES OF SINGLE-CRYSTALS, Physica. B, Condensed matter, 221(1-4), 1996, pp. 445-449
FORMATION OF TILTED CLUSTERS IN THE ELECTROCHEMICAL DEPOSITION OF COPPER ON N-GAAS(001)
Authors: SMILGIES DM FEIDENHANSL R SCHERB G KOLB DM KAZIMIROV A ZEGENHAGEN J
Citation: Dm. Smilgies et al., FORMATION OF TILTED CLUSTERS IN THE ELECTROCHEMICAL DEPOSITION OF COPPER ON N-GAAS(001), Surface science, 367(1), 1996, pp. 40-44
X-RAY-DIFFRACTION STUDY OF A SEMICONDUCTOR ELECTROLYTE INTERFACE - N-GAAS(001)/H2SO4(CU)/
Authors: ZEGENHAGEN J KAZIMIROV A SCHERB G KOLB DM SMILGIES DM FEIDENHANSL R
Citation: J. Zegenhagen et al., X-RAY-DIFFRACTION STUDY OF A SEMICONDUCTOR ELECTROLYTE INTERFACE - N-GAAS(001)/H2SO4(CU)/, Surface science, 352, 1996, pp. 346-351
X-RAY CHARACTERIZATION OF A SRTIO3 BICRYSTAL INTERFACE
Authors: KAZIMIROV A ZEGENHAGEN J DENK I MAIER J SMILGIES DM FEIDENHANSL R
Citation: A. Kazimirov et al., X-RAY CHARACTERIZATION OF A SRTIO3 BICRYSTAL INTERFACE, Surface science, 352, 1996, pp. 875-878
CHARACTERIZATION OF C COIMPLANTED GEXSI1-X EPITAXIAL LAYERS FORMED BYHIGH-DOSE GE ION-IMPLANTATION IN (100)SI
Authors: LOMBARDO S LARSEN KK RAINERI V LAVIA F CAMPISANO SU LAGOMARSINO S KAZIMIROV A
Citation: S. Lombardo et al., CHARACTERIZATION OF C COIMPLANTED GEXSI1-X EPITAXIAL LAYERS FORMED BYHIGH-DOSE GE ION-IMPLANTATION IN (100)SI, Journal of applied physics, 79(7), 1996, pp. 3456-3463
Risultati: 1-14 |