Authors: BABA A BAI D SADOH T KENJO A NAKASHIMA H MORI H TSURUSHIMA T

Citation: A. Baba et al., BEHAVIOR OF RADIATION-INDUCED DEFECTS AND AMORPHIZATION IN SILICON CRYSTAL, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 121(1-4), 1997, pp. 299-301

Authors: SADOH T TSUKAMOTO K BABA A BAI D KENJO A TSURUSHIMA T MORI H NAKASHIMA H

Citation: T. Sadoh et al., DEEP-LEVEL OF IRON-HYDROGEN COMPLEX IN SILICON, Journal of applied physics, 82(8), 1997, pp. 3828-3831

Authors: SADOH T MATSUSHITA A ZHANG YQ BAI DJ BABA A KENJO A TSURUSHIMA T MORI H NAKASHIMA H

Citation: T. Sadoh et al., DEEP STATES IN SILICON-ON-SAPPHIRE BY TRANSIENT-CURRENT SPECTROSCOPY, Journal of applied physics, 82(10), 1997, pp. 5262-5264

Authors: SADOH T TAKESHITA H BABA A KENJO A NAKASHIMA H TSURUSHIMA T

Citation: T. Sadoh et al., BEHAVIOR OF DEFECTS INDUCED BY LOW-ENERGY IONS IN SILICON FILMS, JPN J A P 1, 33(12B), 1994, pp. 7151-7155