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Results:
1-9
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Results: 9
Authors:
SRIVASTAVA P
SAINI NL
SEKHAR BR
VENKATESH S
KHALED M
SHARMA SK
GARG KB
AGARWAL A
GUPTA RP
KHOKLE WS
OHKUBO H
AKINAGA M
Citation: P. Srivastava et al., A PHOTOEMISSION-STUDY OF THE INFLUENCE OF SPUTTERING ON THE AU-BI(2212) INTERFACE, Superconductor science and technology, 7(12), 1994, pp. 940-943
Authors:
SINGH A
KHOKLE WS
LAL K
Citation: A. Singh et al., STRUCTURAL AND MATERIAL PROPERTIES OF TUNGSTEN SILICIDE FORMED AT LOW-TEMPERATURE, Vacuum, 45(8), 1994, pp. 867-869
Authors:
SINGH A
KHOKLE WS
LAL K
Citation: A. Singh et al., THE EFFECT OF SUBSTRATE ORIENTATION ON WSI2 FORMATION, Thin solid films, 238(1), 1994, pp. 155-157
Authors:
AGARWAL A
GUPTA RP
KHOKLE WS
Citation: A. Agarwal et al., RELIABILITY OF HIGH-TEMPERATURE SUPERCONDUCTOR METAL CONTACTS, Microelectronics and reliability, 34(7), 1994, pp. 1273-1278
Authors:
AGARWAL A
GUPTA RP
KHOKLE WS
KUNDRA KD
DESHMUKH PR
SINGH M
VYAS PD
Citation: A. Agarwal et al., A NEW APPROACH FOR THE PREPARATION OF IN-SITU SUPERCONDUCTING BSCCO FILMS, Superconductor science and technology, 6(9), 1993, pp. 670-673
Authors:
SINGH A
VYAS PD
KHOKLE WS
SINGH C
LAL K
Citation: A. Singh et al., PROCESS AND MATERIAL PROPERTIES OF WSI2 FORMED BY DISCHARGE TREATMENT, Solid-state electronics, 36(9), 1993, pp. 1365-1367
Authors:
SINGH A
VYAS PD
KHOKLE WS
SINGH C
LAL K
Citation: A. Singh et al., DISCHARGE TREATMENT OF W-SI SYSTEM FOR SILICIDATION, I.E.E.E. transactions on electron devices, 40(8), 1993, pp. 1551-1553
Authors:
KHOKLE WS
Citation: Ws. Khokle, BASIC SCIENCE, Current Science, 65(2), 1993, pp. 114-114
Authors:
SINGH JK
KOTHARI HS
DAGA OP
SINGH BR
KHOKLE WS
Citation: Jk. Singh et al., ON THE MEASUREMENT OF MICROWAVE-ABSORPTION OF BULK YBACUO SUPERCONDUCTORS IN X-BAND (8-12 GHZ), Bulletin of Materials Science, 14(3), 1991, pp. 793-796
Risultati:
1-9
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