Authors:
KIESLICH A
DOLESCHEL H
KIESELING F
REITHMAIER JP
FORCHEL A
Citation: A. Kieslich et al., REDUCED LATERAL STRAGGLING OF IMPLANTATION-INDUCED DEFECTS IN III V HETEROSTRUCTURES BY ION-IMPLANTATION ALONG CHANNELING DIRECTIONS/, Applied physics letters, 68(1), 1996, pp. 102-104
Authors:
KIESLICH A
DOLESCHEL H
REITHMAIER JP
FORCHEL A
STOFFEL NG
Citation: A. Kieslich et al., IMPLANTATION-INDUCED DAMAGE IN III V-HETEROSTRUCTURES/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 99(1-4), 1995, pp. 594-597
Authors:
ORTH A
REITHMAIER JP
MULLER J
KIESLICH A
FORCHEL A
WEBER J
GYURO I
ZIELINSKI E
Citation: A. Orth et al., GAIN-MODULATED 2ND-ORDER DISTRIBUTED-FEEDBACK GRATINGS FABRICATED BY MASKLESS FOCUSED ION-BEAM IMPLANTATION IN GAINASP HETEROSTRUCTURES, Microelectronic engineering, 27(1-4), 1995, pp. 343-346
Citation: A. Kieslich et al., MINIMUM FEATURE SIZES AND ION-BEAM PROFILE FOR A FOCUSED ION-BEAM SYSTEM WITH POST-OBJECTIVE LENS RETARDING AND ACCELERATION MODE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3518-3522
Authors:
REITHMAIER JP
KIESLICH A
SAWARAGI H
FORCHEL A
Citation: Jp. Reithmaier et al., HIGH-RESOLUTION FOCUSED ION-BEAM IMPLANTATION WITH POST OBJECTIVE LENS RETARDING AND ACCELERATION, Microelectronic engineering, 23(1-4), 1994, pp. 119-122
Authors:
KIESLICH A
DOLESCHEL H
FALLER F
FORCHEL A
STOFFEL NG
Citation: A. Kieslich et al., INVESTIGATION OF THE LONGITUDINAL AND LATERAL DISTRIBUTION OF IMPLANTATION-INDUCED DAMAGE IN GAAS INGAAS HETEROSTRUCTURES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2544-2547
Citation: A. Kieslich et al., OPTICAL INVESTIGATION OF IMPLANTATION DAMAGE IN GAAS ALGAAS QUANTUM-WELLS/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 616-619