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Results: 1-9 |
Results: 9
MEDIUM FIELD BREAKDOWN ORIGIN ON METAL-OXIDE-SEMICONDUCTOR CAPACITOR CONTAINING GROWN-IN CZOCHRALSKI SILICON CRYSTAL DEFECTS
Authors: TAMATSUKA M RADZIMSKI Z ROZGONYI GA OKA S KATO M KITAGAWARA Y
Citation: M. Tamatsuka et al., MEDIUM FIELD BREAKDOWN ORIGIN ON METAL-OXIDE-SEMICONDUCTOR CAPACITOR CONTAINING GROWN-IN CZOCHRALSKI SILICON CRYSTAL DEFECTS, JPN J A P 1, 37(3B), 1998, pp. 1236-1239
EQUILIBRIUM-CONSTANT OF SEGREGATION-INDUCED FE GETTERED BY HEAVY BORON DOPING IN SI
Authors: TOBE S HAYAMIZU Y KITAGAWARA Y
Citation: S. Tobe et al., EQUILIBRIUM-CONSTANT OF SEGREGATION-INDUCED FE GETTERED BY HEAVY BORON DOPING IN SI, Journal of applied physics, 84(3), 1998, pp. 1279-1283
HIGH-SENSITIVITY DEFECT EVALUATION BY A NEW PREFERENTIAL ETCHING TECHNIQUE FOR HIGHLY AS-DOPED SI CRYSTALS
Authors: MAJIMA M OTOGAWA T KITAGAWARA Y
Citation: M. Majima et al., HIGH-SENSITIVITY DEFECT EVALUATION BY A NEW PREFERENTIAL ETCHING TECHNIQUE FOR HIGHLY AS-DOPED SI CRYSTALS, JPN J A P 1, 36(10), 1997, pp. 6195-6199
PRACTICAL COMPUTER-SIMULATION TECHNIQUE TO PREDICT OXYGEN PRECIPITATION BEHAVIOR IN CZOCHRALSKI SILICON-WAFERS FOR VARIOUS THERMAL-PROCESSES
Authors: TAKENO H OTOGAWA T KITAGAWARA Y
Citation: H. Takeno et al., PRACTICAL COMPUTER-SIMULATION TECHNIQUE TO PREDICT OXYGEN PRECIPITATION BEHAVIOR IN CZOCHRALSKI SILICON-WAFERS FOR VARIOUS THERMAL-PROCESSES, Journal of the Electrochemical Society, 144(12), 1997, pp. 4340-4345
TRANSMISSION ELECTRON-MICROSCOPE OBSERVATION OF IR SCATTERING DEFECTSIN AS-GROWN CZOCHRALSKI SI CRYSTALS
Authors: KATO M YOSHIDA T IKEDA Y KITAGAWARA Y
Citation: M. Kato et al., TRANSMISSION ELECTRON-MICROSCOPE OBSERVATION OF IR SCATTERING DEFECTSIN AS-GROWN CZOCHRALSKI SI CRYSTALS, JPN J A P 1, 35(11), 1996, pp. 5597-5601
NOVEL EVALUATION METHODS OF SILICON EPITAXIAL LAYER LIFETIMES BY PHOTOLUMINESCENCE TECHNIQUE AND SURFACE-CHARGE ANALYSIS
Authors: HAYAMIZU Y KITAGAWARA Y HOSHI R TAKENAKA T
Citation: Y. Hayamizu et al., NOVEL EVALUATION METHODS OF SILICON EPITAXIAL LAYER LIFETIMES BY PHOTOLUMINESCENCE TECHNIQUE AND SURFACE-CHARGE ANALYSIS, Denki Kagaku Oyobi Kogyo Butsuri Kagaku, 63(6), 1995, pp. 505-512
EVALUATION OF OXYGEN-RELATED CARRIER RECOMBINATION CENTERS IN HIGH-PURITY CZOCHRALSKI-GROWN SI CRYSTALS BY THE BULK LIFETIME MEASUREMENTS
Authors: KITAGAWARA Y YOSHIDA T HAMAGUCHI T TAKENAKA T
Citation: Y. Kitagawara et al., EVALUATION OF OXYGEN-RELATED CARRIER RECOMBINATION CENTERS IN HIGH-PURITY CZOCHRALSKI-GROWN SI CRYSTALS BY THE BULK LIFETIME MEASUREMENTS, Journal of the Electrochemical Society, 142(10), 1995, pp. 3505-3509
ACCURATE EVALUATION TECHNIQUES OF INTERSTITIAL OXYGEN CONCENTRATIONS IN MEDIUM-RESISTIVITY SI CRYSTALS
Authors: KITAGAWARA Y TAMATSUKA M TAKENAKA T
Citation: Y. Kitagawara et al., ACCURATE EVALUATION TECHNIQUES OF INTERSTITIAL OXYGEN CONCENTRATIONS IN MEDIUM-RESISTIVITY SI CRYSTALS, Journal of the Electrochemical Society, 141(5), 1994, pp. 1362-1364
STUDY OF APPLICABILITY OF AC PHOTOVOLTAIC METHOD AND PHOTOCONDUCTIVE DECAY METHOD USING MICROWAVES AS NONCONTACT METHODS FOR BULK LIFETIME MEASUREMENT
Authors: TODA M KITAGAWARA Y TAKENAKA T
Citation: M. Toda et al., STUDY OF APPLICABILITY OF AC PHOTOVOLTAIC METHOD AND PHOTOCONDUCTIVE DECAY METHOD USING MICROWAVES AS NONCONTACT METHODS FOR BULK LIFETIME MEASUREMENT, JPN J A P 1, 32(7), 1993, pp. 3330-3331
Risultati: 1-9 |