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Results:
1-11
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Results: 11
Authors:
KUNZEL H
EBERT S
GIBIS R
KAISER R
KIZUKI H
MALCHOW S
URMANN G
Citation: H. Kunzel et al., SELECTIVE MOMBE GROWTH OF INP-BASED WAVEGUIDE LASER BUTT-JOINTS/, Journal of crystal growth, 192(1-2), 1998, pp. 56-62
Authors:
MIYASHITA M
KIZUKI H
TSUGAMI M
FUJII N
MIHASHI Y
TAKAMIYA S
Citation: M. Miyashita et al., METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH OF HIGH-QUALITY ALGAAS USING DIMETHYLETHYLAMINE ALANE AND TRIETHYLGALLIUM-DIMETHYLETHYLAMINE ADDUCT, Journal of crystal growth, 192(1-2), 1998, pp. 79-83
Authors:
KUNZEL H
GIBIS R
KIZUKI H
ALBRECHT P
EBERT S
HARDE P
MALCHOW S
KAISER R
Citation: H. Kunzel et al., MOMBE GROWN GAINASP (LAMBDA(G)=1.05 1.15 MU-M) WAVE-GUIDE FOR LASER INTEGRATED PHOTONIC ICS/, Journal of crystal growth, 188(1-4), 1998, pp. 281-287
Authors:
KUNZEL H
ALBRECHT P
EBERT S
GIBIS R
HARDE P
KAISER R
KIZUKI H
MALCHOW S
Citation: H. Kunzel et al., METALORGANIC MOLECULAR-BEAM EPITAXIAL-GROWTH OF SEMIINSULATING GAINASP(LAMBDA(G)=1.05 MU-M)FE OPTICAL WAVE-GUIDES FOR INTEGRATED PHOTONIC DEVICES, Applied physics letters, 72(23), 1998, pp. 3050-3052
Authors:
KIZUKI H
MIYASHITA M
KAJIKAWA Y
MIHASHI Y
Citation: H. Kizuki et al., TIME-RESOLVED PHOTOLUMINESCENCE STUDY ON A HETERO INTERFACE FORMED BYDIRECT REGROWTH OF GAAS ON AN AL0.3GA0.7AS SURFACE PREPARED BY AN IN-SITU HCL-GAS ETCHING PROCESS, JPN J A P 1, 36(10), 1997, pp. 6290-6294
Authors:
KIZUKI H
Citation: H. Kizuki, IN-SITU PROCESSING OF III-V SEMICONDUCTORS - MILE STONES AND FUTURE-PROSPECTS, PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 35(2-4), 1997, pp. 151-175
Authors:
NAKASU Y
NAKASU S
KIZUKI H
UEMURA S
MORIKAWA S
INUBUSHI T
HANDA J
Citation: Y. Nakasu et al., CHANGES IN WATER DIFFUSION OF RAT LIMBIC SYSTEM DURING STATUS EPILEPTICUS ELICITED BY KAINATE, PSYCHIATRY AND CLINICAL NEUROSCIENCES, 49(3), 1995, pp. 228-230
Authors:
SHIMA A
KIZUKI H
TAKEMOTO A
KARAKIDA S
MIYASHITA M
NAGAI Y
KAMIZATO T
SHIGIHARA K
ADACHI A
OMURA E
OTSUBO M
Citation: A. Shima et al., 0.78- AND 0.98-MU-M RIDGE-WAVE-GUIDE LASERS BURIED WITH ALGAAS CONFINEMENT LAYER SELECTIVELY GROWN BY CHLORIDE-ASSISTED MOCVD, IEEE journal of selected topics in quantum electronics, 1(2), 1995, pp. 102-109
Authors:
KIZUKI H
FUJII N
MIYASHITA M
MIHASHI Y
TAKAMIYA S
Citation: H. Kizuki et al., REDUCTION OF INTERFACE CONTAMINATION IN REGROWN GAAS ON ALGAAS USING A NOVEL 2-STEP HCL-GAS ETCHING PROCESS, Journal of crystal growth, 146(1-4), 1995, pp. 527-532
Authors:
KIZUKI H
HAYAFUJI N
FUJII N
KANENO N
MIHASHI Y
MUROTANI T
Citation: H. Kizuki et al., SELECTIVE METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH OF GAAS ON ALGAAS COMBINED WITH IN-SITU HCL-GAS ETCHING, Journal of crystal growth, 134(1-2), 1993, pp. 35-42
Authors:
MIHASHI Y
MIYASHITA M
HAYAFUJI N
KANENO N
KAGEYAMA S
KARAKIDA S
KIZUKI H
SHIMA A
MUROTANI T
Citation: Y. Mihashi et al., LARGE-SCALE METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH OF HIGHLY RELIABLE 780 NM ALGAAS MULTIPLE-QUANTUM-WELL HIGH-POWER LASERS, Journal of crystal growth, 133(3-4), 1993, pp. 281-288
Risultati:
1-11
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