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Results:
1-14
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Results: 14
Authors:
GLEMBOCKI OJ
TUCHMAN JA
DAGATA JA
KO KK
PANG SW
STUTZ CE
Citation: Oj. Glembocki et al., ELECTRONIC-PROPERTIES OF GAAS-SURFACES ETCHED IN AN ELECTRON-CYCLOTRON-RESONANCE SOURCE AND CHEMICALLY PASSIVATED USING P2S5, Applied physics letters, 73(1), 1998, pp. 114-116
Authors:
CHAN LY
KO KK
Citation: Ly. Chan et Kk. Ko, DESIGN OF IGNITION AND FUEL SYSTEMS FOR 2-STROKE ENGINES - A STATISTICAL EXPERIMENTAL-DESIGN APPROACH, Journal of manufacturing systems, 16(5), 1997, pp. 372-380
Authors:
KO KK
BERG EW
PANG SW
Citation: Kk. Ko et al., EFFECTS OF ETCH-INDUCED DAMAGE ON THE ELECTRICAL CHARACTERISTICS OF INPLANE GATED QUANTUM-WIRE TRANSISTORS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3663-3667
Authors:
KO KK
PANG SW
DAHIMENE M
Citation: Kk. Ko et al., RELATING ELECTRIC-FIELD DISTRIBUTION OF AN ELECTRON-CYCLOTRON-RESONANCE CAVITY TO DRY-ETCHING CHARACTERISTICS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(4), 1996, pp. 2020-2025
Authors:
KO KK
PANG SW
Citation: Kk. Ko et Sw. Pang, PLASMA PASSIVATION OF ETCH-INDUCED SURFACE DAMAGE ON GAAS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2376-2380
Authors:
KO KK
KAMATH K
ZIA O
BERG E
PANG SW
BHATTACHARYA P
Citation: Kk. Ko et al., FABRICATION OF DRY-ETCHED MIRRORS FOR IN0.20GA0.80AS GAAS WAVE-GUIDESUSING AN ELECTRON-CYCLOTRON-RESONANCE SOURCE/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2709-2713
MONITORING INP AND GAAS ETCHED IN CL-2 AR USING OPTICAL-EMISSION SPECTROSCOPY AND MASS-SPECTROMETRY/
Authors:
THOMAS S
KO KK
PANG SW
Citation: S. Thomas et al., MONITORING INP AND GAAS ETCHED IN CL-2 AR USING OPTICAL-EMISSION SPECTROSCOPY AND MASS-SPECTROMETRY/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 894-899
Authors:
COLE MW
KO KK
PANG SW
Citation: Mw. Cole et al., THE INFLUENCE OF ION ENERGY, ION FLUX, AND ETCH TEMPERATURE ON THE ELECTRICAL AND MATERIAL QUALITY OF GAAS ETCHED WITH AN ELECTRON-CYCLOTRON-RESONANCE SOURCE, Journal of applied physics, 78(4), 1995, pp. 2712-2715
Authors:
KO KK
PANG SW
Citation: Kk. Ko et Sw. Pang, HIGH-ASPECT-RATIO DEEP VIA HOLES IN INP ETCHED USING CL-2 AR PLASMA/, Journal of the Electrochemical Society, 142(11), 1995, pp. 3945-3949
Authors:
GLEMBOCKI OJ
TUCHMAN JA
KO KK
PANG SW
GIORDANA A
KAPLAN R
STUTZ CE
Citation: Oj. Glembocki et al., EFFECTS OF ELECTRON-CYCLOTRON-RESONANCE ETCHING ON THE AMBIENT (100) GAAS SURFACE, Applied physics letters, 66(22), 1995, pp. 3054-3056
Authors:
KO KK
PANG SW
BROCK T
COLE MW
CASAS LM
Citation: Kk. Ko et al., EVALUATION OF SURFACE DAMAGE ON GAAS ETCHED WITH AN ELECTRON-CYCLOTRON-RESONANCE SOURCE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3382-3387
Authors:
KO KK
PANG SW
Citation: Kk. Ko et Sw. Pang, SURFACE DAMAGE ON GAAS ETCHED USING A MULTIPOLAR ELECTRON-CYCLOTRON-RESONANCE SOURCE, Journal of the Electrochemical Society, 141(1), 1994, pp. 255-258
Authors:
KO KK
PANG SW
Citation: Kk. Ko et Sw. Pang, CONTROLLABLE LAYER-BY-LAYER ETCHING OF III-V COMPOUND SEMICONDUCTORS WITH AN ELECTRON-CYCLOTRON-RESONANCE SOURCE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2275-2779
Authors:
DAVIS L
KO KK
LI WQ
SUN HC
LAM Y
BROCK T
PANG SW
BHATTACHARYA PK
ROOKS MJ
Citation: L. Davis et al., PHOTOLUMINESCENCE AND ELECTROOPTIC PROPERTIES OF SMALL (25-35 NM DIAMETER) QUANTUM BOXES, Applied physics letters, 62(22), 1993, pp. 2766-2768
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