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Results: 1-25 | 26-40 |
Results: 26-40/40
MECHANISM OF (111)SILICON ETCHING IN HF-ACETONITRILE
Authors: RIEGER MM KOHL PA
Citation: Mm. Rieger et Pa. Kohl, MECHANISM OF (111)SILICON ETCHING IN HF-ACETONITRILE, Journal of the Electrochemical Society, 142(5), 1995, pp. 1490-1495
EDITORIAL CHANGES
Authors: KOHL PA
Citation: Pa. Kohl, EDITORIAL CHANGES, Journal of the Electrochemical Society, 142(4), 1995, pp. 1-1
UNTITLED
Authors: KOHL PA
Citation: Pa. Kohl, UNTITLED, Journal of the Electrochemical Society, 142(11), 1995, pp. 1-1
STABILITY OF SODIUM ELECTRODEPOSITED FROM A ROOM-TEMPERATURE CHLOROALUMINATE MOLTEN-SALT
Authors: GRAY GE KOHL PA WINNICK J
Citation: Ge. Gray et al., STABILITY OF SODIUM ELECTRODEPOSITED FROM A ROOM-TEMPERATURE CHLOROALUMINATE MOLTEN-SALT, Journal of the Electrochemical Society, 142(11), 1995, pp. 3636-3642
THE INFLUENCE OF ALUMINUM CONCENTRATION ON PHOTOELECTROCHEMICAL ETCHING OF FIRST-ORDER GRATINGS IN GAAS ALGAAS/
Authors: TWYFORD EJ CARTER CA KOHL PA JOKERST NM
Citation: Ej. Twyford et al., THE INFLUENCE OF ALUMINUM CONCENTRATION ON PHOTOELECTROCHEMICAL ETCHING OF FIRST-ORDER GRATINGS IN GAAS ALGAAS/, Applied physics letters, 67(9), 1995, pp. 1182-1184
NITRIDATION AND CVD REACTIONS WITH HYDRAZINE
Authors: VOGT KW KOHL PA ABYS JA
Citation: Kw. Vogt et al., NITRIDATION AND CVD REACTIONS WITH HYDRAZINE, AIChE journal, 41(10), 1995, pp. 2282-2291
CHARACTERIZATION OF THIN TITANIUM-OXIDE ADHESION LAYERS ON GOLD - RESISTIVITY, MORPHOLOGY, AND COMPOSITION
Authors: VOGT KW KOHL PA CARTER WB BELL RA BOTTOMLEY LA
Citation: Kw. Vogt et al., CHARACTERIZATION OF THIN TITANIUM-OXIDE ADHESION LAYERS ON GOLD - RESISTIVITY, MORPHOLOGY, AND COMPOSITION, Surface science, 301(1-3), 1994, pp. 203-213
PHOTOELECTROCHEMICAL ETCHING OF INAS
Authors: HARRIS D KOHL PA WINNICK J
Citation: D. Harris et al., PHOTOELECTROCHEMICAL ETCHING OF INAS, Journal of the Electrochemical Society, 141(5), 1994, pp. 1274-1277
THE ELECTROCHEMICAL OXIDATION OF SILICON AND FORMATION OF POROUS SILICON IN ACETONITRILE
Authors: PROPST EK KOHL PA
Citation: Ek. Propst et Pa. Kohl, THE ELECTROCHEMICAL OXIDATION OF SILICON AND FORMATION OF POROUS SILICON IN ACETONITRILE, Journal of the Electrochemical Society, 141(4), 1994, pp. 1006-1013
LUMINESCENT CHARACTERISTICS OF A NOVEL POROUS SILICON STRUCTURE FORMED IN A NONAQUEOUS ELECTROLYTE
Authors: PROPST EK RIEGER MM VOGT KW KOHL PA
Citation: Ek. Propst et al., LUMINESCENT CHARACTERISTICS OF A NOVEL POROUS SILICON STRUCTURE FORMED IN A NONAQUEOUS ELECTROLYTE, Applied physics letters, 64(15), 1994, pp. 1914-1916
PROCESSING AND PERFORMANCE OF GOLD MCMS
Authors: CLOUD TA HOUSTON MR KOHL PA BIDSTRUP SA
Citation: Ta. Cloud et al., PROCESSING AND PERFORMANCE OF GOLD MCMS, IEEE transactions on components, hybrids, and manufacturing technology, 16(7), 1993, pp. 724-730
GALLIUM-ARSENIDE PASSIVATION THROUGH NITRIDATION WITH HYDRAZINE
Authors: VOGT KW KOHL PA
Citation: Kw. Vogt et Pa. Kohl, GALLIUM-ARSENIDE PASSIVATION THROUGH NITRIDATION WITH HYDRAZINE, Journal of applied physics, 74(10), 1993, pp. 6448-6450
CATION EFFECT ON THE CDSE-LIQUID JUNCTION
Authors: HARRIS D WINNICK J KOHL PA
Citation: D. Harris et al., CATION EFFECT ON THE CDSE-LIQUID JUNCTION, Journal of the Electrochemical Society, 140(9), 1993, pp. 2581-2588
THE PHOTOELECTROCHEMICAL OXIDATION OF N-SI IN ANHYDROUS HF-ACETONITRILE
Authors: PROPST E KOHL PA
Citation: E. Propst et Pa. Kohl, THE PHOTOELECTROCHEMICAL OXIDATION OF N-SI IN ANHYDROUS HF-ACETONITRILE, Journal of the Electrochemical Society, 140(5), 1993, pp. 78-80
PHOTOELECTROCHEMICAL ETCHING OF GASB
Authors: PROPST EK VOGT KW KOHL PA
Citation: Ek. Propst et al., PHOTOELECTROCHEMICAL ETCHING OF GASB, Journal of the Electrochemical Society, 140(12), 1993, pp. 3631-3635
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