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Results: 1-19 |
Results: 19
FULL-FIELD MEASUREMENTS OF CURVATURE USING COHERENT GRADIENT SENSING - APPLICATION TO THIN-FILM CHARACTERIZATION
Authors: ROSAKIS AJ SINGH RP TSUJI Y KOLAWA E MOORE NR
Citation: Aj. Rosakis et al., FULL-FIELD MEASUREMENTS OF CURVATURE USING COHERENT GRADIENT SENSING - APPLICATION TO THIN-FILM CHARACTERIZATION, Thin solid films, 325(1-2), 1998, pp. 42-54
FILMS OF NI-7 AT-PERCENT V, PD, PT AND TA-SI-N AS DIFFUSION-BARRIERS FOR COPPER ON BI2TE3
Authors: KACSICH T KOLAWA E FLEURIAL JP CAILLAT T NICOLET MA
Citation: T. Kacsich et al., FILMS OF NI-7 AT-PERCENT V, PD, PT AND TA-SI-N AS DIFFUSION-BARRIERS FOR COPPER ON BI2TE3, Journal of physics. D, Applied physics (Print), 31(19), 1998, pp. 2406-2411
EFFECT OF SI IN REACTIVELY SPUTTERED TI-SI-N FILMS ON STRUCTURE AND DIFFUSION BARRIER PERFORMANCE
Authors: SUN X KOLAWA E IM S GARLAND C NICOLET MA
Citation: X. Sun et al., EFFECT OF SI IN REACTIVELY SPUTTERED TI-SI-N FILMS ON STRUCTURE AND DIFFUSION BARRIER PERFORMANCE, Applied physics A: Materials science & processing, 65(1), 1997, pp. 43-45
REACTION OF THIN NI FILMS WITH (001) 3C-SIC AT 700-DEGREES-C
Authors: GASSER SM BACHLI A GARLAND CM KOLAWA E NICOLET MA
Citation: Sm. Gasser et al., REACTION OF THIN NI FILMS WITH (001) 3C-SIC AT 700-DEGREES-C, Microelectronic engineering, 37-8(1-4), 1997, pp. 529-534
REACTIVELY SPUTTERED TI-SI-N FILMS .1. PHYSICAL-PROPERTIES
Authors: SUN X REID JS KOLAWA E NICOLET MA
Citation: X. Sun et al., REACTIVELY SPUTTERED TI-SI-N FILMS .1. PHYSICAL-PROPERTIES, Journal of applied physics, 81(2), 1997, pp. 656-663
REACTIVELY SPUTTERED TI-SI-N FILMS .2. DIFFUSION-BARRIERS FOR AL AND CU METALLIZATIONS ON SI
Authors: SUN X REID JS KOLAWA E NICOLET MA RUIZ RP
Citation: X. Sun et al., REACTIVELY SPUTTERED TI-SI-N FILMS .2. DIFFUSION-BARRIERS FOR AL AND CU METALLIZATIONS ON SI, Journal of applied physics, 81(2), 1997, pp. 664-671
GOLD METALLIZATION FOR ALUMINUM NITRIDE
Authors: SHALISH I GASSER SM KOLAWA E NICOLET MA RUIZ RP
Citation: I. Shalish et al., GOLD METALLIZATION FOR ALUMINUM NITRIDE, Thin solid films, 289(1-2), 1996, pp. 166-169
AMORPHOUS (MO, TA, OR W)-SI-N DIFFUSION-BARRIERS FOR AL METALLIZATIONS
Authors: REID JS KOLAWA E GARLAND CM NICOLET MA CARDONE F GUPTA D RUIZ RP
Citation: Js. Reid et al., AMORPHOUS (MO, TA, OR W)-SI-N DIFFUSION-BARRIERS FOR AL METALLIZATIONS, Journal of applied physics, 79(2), 1996, pp. 1109-1115
REACTIVE ION ETCHING OF TA-SI-N DIFFUSION-BARRIERS IN CF4+O2
Authors: MCLANE GF CASAS L REID JS KOLAWA E NICOLET MA
Citation: Gf. Mclane et al., REACTIVE ION ETCHING OF TA-SI-N DIFFUSION-BARRIERS IN CF4+O2, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2352-2355
SOLID-STATE REACTION OF PT THIN-FILM WITH SINGLE-CRYSTAL (001) BETA-SIC
Authors: CHEN JS KOLAWA E NICOLET MA RUIZ RP BAUD L JAUSSAUD C MADAR R
Citation: Js. Chen et al., SOLID-STATE REACTION OF PT THIN-FILM WITH SINGLE-CRYSTAL (001) BETA-SIC, Journal of materials research, 9(3), 1994, pp. 648-657
TI-SI-N DIFFUSION-BARRIERS BETWEEN SILICON AND COPPER
Authors: REID JS SUN X KOLAWA E NICOLET MA
Citation: Js. Reid et al., TI-SI-N DIFFUSION-BARRIERS BETWEEN SILICON AND COPPER, IEEE electron device letters, 15(8), 1994, pp. 298-300
REACTION OF TA THIN-FILM WITH SINGLE-CRYSTALLINE (001) BETA-SIC
Authors: CHEN JS KOLAWA E NICOLET MA RUIZ RP BAUD L JAUSSAUD C MADAR R
Citation: Js. Chen et al., REACTION OF TA THIN-FILM WITH SINGLE-CRYSTALLINE (001) BETA-SIC, Journal of applied physics, 76(4), 1994, pp. 2169-2175
STABILITY OF RHENIUM THIN-FILMS AN SINGLE-CRYSTAL (001) BETA-SIC
Authors: CHEN JS KOLAWA E NICOLET MA BAUD L JAUSSAUD C MADAR R BERNARD C
Citation: Js. Chen et al., STABILITY OF RHENIUM THIN-FILMS AN SINGLE-CRYSTAL (001) BETA-SIC, Journal of applied physics, 75(2), 1994, pp. 897-901
OHMIC CONTACTS TO N-GAAS WITH A PT GE/AU CONTACTING LAYER AND A TA-SI-N BARRIER - ELECTRICAL AND METALLURGICAL CHARACTERISTICS/
Authors: CHEN JS KOLAWA E NICOLET MA RUIZ RP
Citation: Js. Chen et al., OHMIC CONTACTS TO N-GAAS WITH A PT GE/AU CONTACTING LAYER AND A TA-SI-N BARRIER - ELECTRICAL AND METALLURGICAL CHARACTERISTICS/, Journal of applied physics, 75(11), 1994, pp. 7373-7381
ION-BEAM-ASSISTED DEPOSITION OF TIN THIN-FILMS
Authors: KUBOTA H CHEN JS NAGATA M KOLAWA E NICOLET MA
Citation: H. Kubota et al., ION-BEAM-ASSISTED DEPOSITION OF TIN THIN-FILMS, JPN J A P 1, 32(8), 1993, pp. 3414-3419
THERMAL-REACTION OF TA THIN-FILMS WITH POLYCRYSTALLINE DIAMOND
Authors: CHEN JS KOLAWA E NICOLET MA POOL FS
Citation: Js. Chen et al., THERMAL-REACTION OF TA THIN-FILMS WITH POLYCRYSTALLINE DIAMOND, Thin solid films, 236(1-2), 1993, pp. 72-76
AMORPHOUS W40RE40B20 DIFFUSION-BARRIERS FOR [SI] AL AND [SI]/CU METALLIZATIONS/
Authors: KOLAWA E SUN X REID JS CHEN JS NICOLET MA RUIZ R
Citation: E. Kolawa et al., AMORPHOUS W40RE40B20 DIFFUSION-BARRIERS FOR [SI] AL AND [SI]/CU METALLIZATIONS/, Thin solid films, 236(1-2), 1993, pp. 301-305
EVALUATION OF AMORPHOUS (MO, TA, W)-SI-N DIFFUSION-BARRIERS FOR [SI] CU METALLIZATIONS/
Authors: REID JS KOLAWA E RUIZ RP NICOLET MA
Citation: Js. Reid et al., EVALUATION OF AMORPHOUS (MO, TA, W)-SI-N DIFFUSION-BARRIERS FOR [SI] CU METALLIZATIONS/, Thin solid films, 236(1-2), 1993, pp. 319-324
PROPERTIES OF REACTIVELY SPUTTER-DEPOSITED TA-N THIN-FILMS
Authors: SUN X KOLAWA E CHEN JS REID JS NICOLET MA
Citation: X. Sun et al., PROPERTIES OF REACTIVELY SPUTTER-DEPOSITED TA-N THIN-FILMS, Thin solid films, 236(1-2), 1993, pp. 347-351
Risultati: 1-19 |