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Results: 1-19 |
Results: 19
RELATIONSHIP BETWEEN THE ELECTRONIC-PROPERTIES OF THE INTERFACE AND THE INTERPHASE INTERACTIONS IN NBN-GAAS HETEROSTRUCTURES
Authors: BELYAEV AA VENGER EF LYAPIN VG KONAKOVA RV MILENIN VV TKHORIK YA HOTOVY I KASHIN GN
Citation: Aa. Belyaev et al., RELATIONSHIP BETWEEN THE ELECTRONIC-PROPERTIES OF THE INTERFACE AND THE INTERPHASE INTERACTIONS IN NBN-GAAS HETEROSTRUCTURES, Technical physics, 43(1), 1998, pp. 56-59
MAGNETIC-FIELD-INDUCED RESONANCE IN A DOUBLE-BARRIER RESONANT-TUNNELING DIODE
Authors: BELYAEV AE VITUSEVICH SA GLAVIN BA KONAKOVA RV FIGIELSKI T DOBROWOLSKI W MAKOSA A KRAVCHENKO LN
Citation: Ae. Belyaev et al., MAGNETIC-FIELD-INDUCED RESONANCE IN A DOUBLE-BARRIER RESONANT-TUNNELING DIODE, Solid-state electronics, 42(2), 1998, pp. 257-261
EFFECT OF ULTRASONIC TREATMENT ON DEFORMATION EFFECTS AND THE STRUCTURE OF LOCAL CENTERS IN THE SUBSTRATE AND IN THE CONTACT REGIONS OF M N-N(+)-GAAS STRUCTURES (M=PT, CR, W)/
Authors: ERMOLOVICH IB MILENIN VV KONAKOVA RV PRIMENKO LN PROKOPENKO IV GROMASHEVSKII VL
Citation: Ib. Ermolovich et al., EFFECT OF ULTRASONIC TREATMENT ON DEFORMATION EFFECTS AND THE STRUCTURE OF LOCAL CENTERS IN THE SUBSTRATE AND IN THE CONTACT REGIONS OF M N-N(+)-GAAS STRUCTURES (M=PT, CR, W)/, Semiconductors, 31(4), 1997, pp. 427-430
PROPERTIES OF AL, (AUGE)-GAAS CONTACTS MA NUFACTURED DURING COMBININGION PROCESSING AND METALLIZATION PROCESSES
Authors: ERMOLOVICH IB ILIN IY KONAKOVA RV MILENIN VV
Citation: Ib. Ermolovich et al., PROPERTIES OF AL, (AUGE)-GAAS CONTACTS MA NUFACTURED DURING COMBININGION PROCESSING AND METALLIZATION PROCESSES, Zurnal tehniceskoj fiziki, 67(2), 1997, pp. 123-124
BISTABILITY IN DOUBLE-BARRIER RESONANT-TUNNELING STRUCTURES WITH A WIDE SPACER LAYER
Authors: BELYAEV AE VITUSEVICH SA GLAVIN BA KONAKOVA RV FIGELSKI T MAKOSA A KRAVCHENKO LN DOBROVOLSKI V
Citation: Ae. Belyaev et al., BISTABILITY IN DOUBLE-BARRIER RESONANT-TUNNELING STRUCTURES WITH A WIDE SPACER LAYER, Inorganic materials, 33(2), 1997, pp. 116-119
TUNNEL CURRENT FEATURES CAUSED BY DEFECT ASSISTED PROCESS IN RESONANT-TUNNELING STRUCTURES
Authors: BELYAEV AE VITUSEVICH SA GLAVIN BA KONAKOVA RV DOBROWOLSKI W MAKOSA A KRAVCHENKO LN GORNEV ES
Citation: Ae. Belyaev et al., TUNNEL CURRENT FEATURES CAUSED BY DEFECT ASSISTED PROCESS IN RESONANT-TUNNELING STRUCTURES, Acta Physica Polonica. A, 90(4), 1996, pp. 727-730
EFFECT OF ULTRASONIC TREATMENT ON MICROPR OCESSES OF THE FORMATION OFSCHOTTKY BARRIERS IN M-N-N(+)GAAS HETEROSYSTEMS WHERE (M=PT, CR, W)
Authors: ERMOLOVICH IB MILENIN VV KONAKOVA RV PROKOPENKO IV GROMASHEVSKII VL
Citation: Ib. Ermolovich et al., EFFECT OF ULTRASONIC TREATMENT ON MICROPR OCESSES OF THE FORMATION OFSCHOTTKY BARRIERS IN M-N-N(+)GAAS HETEROSYSTEMS WHERE (M=PT, CR, W), Pis'ma v Zurnal tehniceskoj fiziki, 22(6), 1996, pp. 33-36
EFFECT OF SPACER LAYER ON QUANTUM INTERFERENCE IN DOUBLE-BARRIER RESONANT-TUNNELING STRUCTURES
Authors: BELYAEV AE VITUSEVICH SA FIGIELSKI T GLAVIN BA KONAKOVA RV KRAVCHENKO LN MAKOSA A WOSINSKI T
Citation: Ae. Belyaev et al., EFFECT OF SPACER LAYER ON QUANTUM INTERFERENCE IN DOUBLE-BARRIER RESONANT-TUNNELING STRUCTURES, Surface science, 362(1-3), 1996, pp. 235-238
TRANSVERSE ELECTRON-TRANSPORT IN RESONANT-TUNNELING STRUCTURES WITH 2D CHARGE-CARRIERS
Authors: BELYAEV AE VITUSEVICH SA KONAKOVA RV KRAVCHENKO LN ILIN IY
Citation: Ae. Belyaev et al., TRANSVERSE ELECTRON-TRANSPORT IN RESONANT-TUNNELING STRUCTURES WITH 2D CHARGE-CARRIERS, Semiconductors, 29(2), 1995, pp. 177-180
FINE-STRUCTURE OF RESONANT-TUNNELING PEAK IN GAAS ALAS DOUBLE-BARRIERHETEROSTRUCTURE/
Authors: VITUSEVICH SA FIGIELSKI T MAKOSA A WOSINSKI T BELYAEV AE KONAKOVA RV KRAVCHENKO LN
Citation: Sa. Vitusevich et al., FINE-STRUCTURE OF RESONANT-TUNNELING PEAK IN GAAS ALAS DOUBLE-BARRIERHETEROSTRUCTURE/, Acta Physica Polonica. A, 87(2), 1995, pp. 377-380
EFFECTS OF GAMMA-IRRADIATION ON PROPERTIE S OF SIO2-GAAS STRUCTURES
Authors: BREZA Y DIDENKO PI KONAKOVA RV MILENIN VV ROMANOVA GF
Citation: Y. Breza et al., EFFECTS OF GAMMA-IRRADIATION ON PROPERTIE S OF SIO2-GAAS STRUCTURES, Zurnal tehniceskoj fiziki, 65(5), 1995, pp. 122-131
MOVEMENT OF GALLIUM INCLUSIONS TO GAAS DE VICES AS POSSIBLE MECHANISMOF DEGRADATION
Authors: KONAKOVA RV ILIN IO MILENIN VV PROKOPENKO IV PRIMA NA SLUTSKII MI STATOV VA TKHORIK YA FILATOV MY
Citation: Rv. Konakova et al., MOVEMENT OF GALLIUM INCLUSIONS TO GAAS DE VICES AS POSSIBLE MECHANISMOF DEGRADATION, Zurnal tehniceskoj fiziki, 65(10), 1995, pp. 46-54
OSCILLATORY AND MAGNETO-OSCILLATORY STRUCTURE OF THE TUNNEL CURRENT IN DOUBLE-BARRIER HETEROSTRUCTURES
Authors: FIGIELSKI T VITUSEVICH SA MAKOSA A DOBROWOLSKI W BELYAEV AE WOSINSKI T KONAKOVA RV KRAVCHENKO LN
Citation: T. Figielski et al., OSCILLATORY AND MAGNETO-OSCILLATORY STRUCTURE OF THE TUNNEL CURRENT IN DOUBLE-BARRIER HETEROSTRUCTURES, Solid state communications, 94(2), 1995, pp. 93-98
RADIATION PROCESSING OF CR-GAAS CONTACTS
Authors: BREZA J KADLECIKOVA M KONAKOVA RV LYAPIN VG MILENIN VV STATOV VA TKHORIK YA FILATOV MY
Citation: J. Breza et al., RADIATION PROCESSING OF CR-GAAS CONTACTS, Applied physics letters, 67(10), 1995, pp. 1462-1464
PHYSICAL-CHEMICAL PROCESSES ON THE INTERF ACE OF UHF-ANNEALATED AU PT/CR/PT/GAAS CONTACTS/
Authors: MILENIN VV KONAKOVA RV STATOV VA SKLYAREVICH VE TKHORIK YA FILATOV MY SHEVELEV MV
Citation: Vv. Milenin et al., PHYSICAL-CHEMICAL PROCESSES ON THE INTERF ACE OF UHF-ANNEALATED AU PT/CR/PT/GAAS CONTACTS/, Pis'ma v Zurnal tehniceskoj fiziki, 20(4), 1994, pp. 32-35
ON A DIFFUSION MECHANISM OF INTRINSIC STRESS-RELAXATION IN AUGE-GAAS CONTACTS
Authors: TKHORIK YA VDOVIN VI KHAZAN LS KONAKOVA RV MILENIN VV NAUMOVETS AA
Citation: Ya. Tkhorik et al., ON A DIFFUSION MECHANISM OF INTRINSIC STRESS-RELAXATION IN AUGE-GAAS CONTACTS, Thin solid films, 238(1), 1994, pp. 51-53
TUNNEL CURRENT OSCILLATIONS IN A GAAS ALAS DOUBLE-BARRIER HETEROSTRUCTURE/
Authors: BELYAEV AE VITUSEVICH SA KONAKOVA RV FIGIELSKI T MAKOSA A WOSINSKI T KRAVCHENKO LN
Citation: Ae. Belyaev et al., TUNNEL CURRENT OSCILLATIONS IN A GAAS ALAS DOUBLE-BARRIER HETEROSTRUCTURE/, JETP letters, 60(6), 1994, pp. 416-419
FINAL TREATMENT OF GAAS AND GAP SUBSTRATES FOR LIQUID-PHASE EPITAXY
Authors: ANNAEVA AR BERKELIEV AB KONAKOVA RV PROKOPENKO IV
Citation: Ar. Annaeva et al., FINAL TREATMENT OF GAAS AND GAP SUBSTRATES FOR LIQUID-PHASE EPITAXY, Inorganic materials, 30(3), 1994, pp. 306-308
INTERPHASE INTERACTIONS IN THIN-FILM SURF ACE-BARRIER PT-GAAS STRUCTURES
Authors: BREZA Y BORKOVSKAYA OY DMITRUK NL KONAKOVA RV MILENIN VV NAUMOVETS AA NESTERENKO BA TKHORIK YA FILATOV MY
Citation: Y. Breza et al., INTERPHASE INTERACTIONS IN THIN-FILM SURF ACE-BARRIER PT-GAAS STRUCTURES, Zurnal tehniceskoj fiziki, 62(8), 1992, pp. 88-94
Risultati: 1-19 |