Authors:
BESSOLOV VN
ZHILYAEV YV
KONENKOVA EV
LEBEDEV MV
Citation: Vn. Bessolov et al., SULFIDE PASSIVATION OF III-V SEMICONDUCTOR SURFACES - ROLE OF THE SULFUR IONIC CHARGE AND OF THE REACTION POTENTIAL OF THE SOLUTION, Technical physics, 43(8), 1998, pp. 983-985
Citation: Vn. Bessolov et al., X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF GAAS(110) CLEAVED IN ALCOHOLIC SULFIDE SOLUTIONS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 876-879
Citation: Vn. Bessolov et al., A COMPARISON OF THE EFFECTIVENESS OF GAAS SURFACE PASSIVATION WITH SODIUM AND AMMONIUM SULFIDE SOLUTIONS, Physics of the solid state, 39(1), 1997, pp. 54-57
Citation: Vn. Bessolov et al., SULFIDIZATION OF GAAS IN ALCOHOLIC SOLUTIONS - A METHOD HAVING AN IMPACT ON EFFICIENCY AND STABILITY OF PASSIVATION, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 376-379
Citation: Vn. Bessolov et al., SOLVENT EFFECT ON THE PROPERTIES OF SULFUR PASSIVATED GAAS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2761-2766
Authors:
BESSOLOV VN
IVANKOV AF
KONENKOVA EV
LEBEDEV MV
STRYKANOV VS
Citation: Vn. Bessolov et al., KINETICS OF GAAS(100) SURFACE PASSIVATION IN AQUEOUS-SOLUTIONS OF SODIUM SULFIDE, Semiconductors, 30(2), 1996, pp. 201-206
Citation: Vn. Bessolov et al., LUMINESCENCE AND X-RAY PHOTOELECTRON-SPEC TROSCOPY OF GAAS SURFACE SULFIDIZED IN ALCOHOL-SOLUTIONS, Fizika tverdogo tela, 38(9), 1996, pp. 2656-2666
Citation: Vn. Bessolov et al., ROLE OF THE EFFICIENCY OF SULFIDE COATING FORMING IN THE ELECTRON PASSIVATION OF GAAS SURFACE, Pis'ma v Zurnal tehniceskoj fiziki, 22(18), 1996, pp. 37-42