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Results: 1-15 |
Results: 15
ELECTRON INJECTION IN SEMICONDUCTOR DRIFT DETECTORS
Authors: BELLWIED R BEUTTENMULLER R CHEN W DIMASSIMO D DOU L DYKE H FRENCH A HALL JR HOFFMANN GW HUMANIC T KOTOV IV KRANER HW LI Z LYNN D OTT G PANDEY SU PRUNEAU C RYKOV VL SCHAMBACH J SEDLMEIR J SUGARBAKER E TAKAHASHI J WILSON WK
Citation: R. Bellwied et al., ELECTRON INJECTION IN SEMICONDUCTOR DRIFT DETECTORS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 416(1), 1998, pp. 70-80
MEASUREMENT OF 2-PARTICLE RESOLUTION IN SILICON DRIFT DETECTORS
Authors: PANDEY SU BELLWIED R BEUTTENMUELLER R CAINES H CHEN W DIMASSIMO D DYKE H HALL J HOFFMANN GW HUMANIC TJ KUCZEWSKI P KOTOV IV KRANER HW LEONHARDT B LIAW CJ LI Z LOCURTO G LYNN D MIDDELKAMP P OTT G PRUNEAU C RYKOV V SCHAMBACH J SEDLMEIR J SHEEN J SOJA B SUGARBAKER E TAKAHASHI J WILSON WK
Citation: Su. Pandey et al., MEASUREMENT OF 2-PARTICLE RESOLUTION IN SILICON DRIFT DETECTORS, IEEE transactions on nuclear science, 45(3), 1998, pp. 315-321
STUDIES OF IONIZING-RADIATION EFFECTS ON STAR SILICON DRIFT DETECTORS
Authors: BELLWIED R BEUTTENMULLER R CHEN W DIMASSIMO D DYKE H FRENCH A HALL JR HOFFMANN GW HUMANIC TJ KOTOV IV KRANER HW LI Z LIAW CJ LOPEZ J LYNN D RYKOV VL PANDEY SU PRUNEAU C SCHAMBACH J SEDLMEIR J SUGARBAKER E TAKAHASHI J WILSON WK
Citation: R. Bellwied et al., STUDIES OF IONIZING-RADIATION EFFECTS ON STAR SILICON DRIFT DETECTORS, IEEE transactions on nuclear science, 45(3), 1998, pp. 623-625
STUDY OF RECOMBINATION PROPERTIES OF NEUTRON TRANSMUTATION DOPED SILICON-WAFERS
Authors: GAUBAS E VANHELLEMONT J SIMOEN E CLAUWS P KRANER HW VILKELIS G SMILGA AP
Citation: E. Gaubas et al., STUDY OF RECOMBINATION PROPERTIES OF NEUTRON TRANSMUTATION DOPED SILICON-WAFERS, Semiconductor science and technology, 12(9), 1997, pp. 1092-1099
ANODE REGION DESIGN AND FOCUSING PROPERTIES OF STAR SILICON DRIFT DETECTORS
Authors: BELLWIED R BEUTTENMULLER R CHEN W DIMASSIMO D DOU L DYKE H FRENCH A HALL JR HOFFMANN GW HUMANIC TJ KOTOV IV KRANER HW LI Z LIAW CJ LOPEZ J LYNN D RYKOV VL PANDEY SU PRUNEAU C SCHAMBACH J SEDLMEIR J SUGARBAKER E TAKAHASHI J WILSON WK
Citation: R. Bellwied et al., ANODE REGION DESIGN AND FOCUSING PROPERTIES OF STAR SILICON DRIFT DETECTORS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 400(2-3), 1997, pp. 279-286
NEW RESULTS WITH SILICON PAD DETECTORS AND LOW-NOISE ELECTRONICS FOR ABSORPTION SPECTROMETRY
Authors: PULLIA A KRANER HW FURENLID L
Citation: A. Pullia et al., NEW RESULTS WITH SILICON PAD DETECTORS AND LOW-NOISE ELECTRONICS FOR ABSORPTION SPECTROMETRY, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 395(3), 1997, pp. 452-456
BEHAVIOR OF SILICON DRIFT DETECTORS IN LARGE MAGNETIC-FIELDS
Authors: PANDEY SU BELLWIED R BEUTTENMUELLER R CHEN W COOPER D DIMASSIMO D DOU L DYKE H ELLIOT D FRENCH A HALL J HOFFMANN GW HUMANIC TJ KIRKMAN J KOTOV IV KRANER HW LIAW CJ LOCURTO G LYNN D PAGANIS S PRUNEAU C READ D RYKOV V SCHAMBACH J SEDLMEIR J SUGARBAKER E TAKAHASHI J VILKELIS G WILSON WK
Citation: Su. Pandey et al., BEHAVIOR OF SILICON DRIFT DETECTORS IN LARGE MAGNETIC-FIELDS, IEEE transactions on nuclear science, 44(3), 1997, pp. 610-614
DOUBLE PARTICLE RESOLUTION IN STAR SILICON DRIFT DETECTORS
Authors: BELLWIED R BEUTTENMULLER R CHEN W DIMASSIMO D DOU L DYKE H FRENCH A HALL JR HOFFMAN GW HUMANIC T KOTOVA AI KOTOV IV KRANER HW LI Z LIAW CJ LYNN D RAY L RYKOV VL PANDEY SU PRUNEAU C SCHAMBACH J SEDLMEIR J SUGARBAKER E TAKAHASHI J WILSON WK
Citation: R. Bellwied et al., DOUBLE PARTICLE RESOLUTION IN STAR SILICON DRIFT DETECTORS, IEEE transactions on nuclear science, 44(3), 1997, pp. 687-690
TRANSPORT-PROPERTIES OF ELECTRONS IN SILICON DRIFT DETECTORS MEASUREDIN LARGE MAGNETIC-FIELDS
Authors: PANDEY SU COOPER D DYKE H ELLIOT D HUMANIC TJ KIRKMAN J KOTOV IV LOCURTO G SUGARBAKER E VILKELIS G BELLWIED R DOU L FRENCH A HALL J PRUNEAU C RYKOV V TAKAHASHI J WILSON WK BEUTTENMUELLER R CHEN W DIMASSIMO D KRANER HW LIAW CJ LYNN D SEDLMEIR J HOFFMANN GW PAGANIS S READ D SCHAMBACH J
Citation: Su. Pandey et al., TRANSPORT-PROPERTIES OF ELECTRONS IN SILICON DRIFT DETECTORS MEASUREDIN LARGE MAGNETIC-FIELDS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 383(2-3), 1996, pp. 537-546
DEVELOPMENT OF LARGE LINEAR SILICON DRIFT DETECTORS FOR THE STAR EXPERIMENT AT RHIC
Authors: BELLWIED R BEUTTENMUELLER R CHEN W DIMASSIMO D DOU L DYKE H FRENCH A HALL JR HOFFMANN GW HUMANIC T KOTOV I KRANER HW LIAW CJ LYNN D PAGANIS S RAY L READ D RYKOV VL PANDEY SU PRUNEAU C SCHAMBACH J SEDLMEIR J VILKELIS G WILSON WK
Citation: R. Bellwied et al., DEVELOPMENT OF LARGE LINEAR SILICON DRIFT DETECTORS FOR THE STAR EXPERIMENT AT RHIC, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 377(2-3), 1996, pp. 387-392
MICROSCOPIC ANALYSIS OF DEFECTS IN A HIGH-RESISTIVITY SILICON DETECTOR IRRADIATED TO 1.7X10(15)N CM(2)/
Authors: LI Z GHISLOTTI G KRANER HW LI CJ NIELSEN B FEICK H LINDSTROEM G
Citation: Z. Li et al., MICROSCOPIC ANALYSIS OF DEFECTS IN A HIGH-RESISTIVITY SILICON DETECTOR IRRADIATED TO 1.7X10(15)N CM(2)/, IEEE transactions on nuclear science, 43(3), 1996, pp. 1590-1598
STUDY OF THE LONG-TERM STABILITY OF THE EFFECTIVE CONCENTRATION OF IONIZED SPACE CHARGES (N-EFF) OF NEUTRON-IRRADIATED SILICON DETECTORS FABRICATED BY VARIOUS THERMAL-OXIDATION PROCESSES
Authors: LI Z CHEN W DOU L EREMIN V KRANER HW LI CJ LINDSTROEM G SPIRITI E
Citation: Z. Li et al., STUDY OF THE LONG-TERM STABILITY OF THE EFFECTIVE CONCENTRATION OF IONIZED SPACE CHARGES (N-EFF) OF NEUTRON-IRRADIATED SILICON DETECTORS FABRICATED BY VARIOUS THERMAL-OXIDATION PROCESSES, IEEE transactions on nuclear science, 42(4), 1995, pp. 219-223
ELEVATED-TEMPERATURE ANNEALING OF THE NEUTRON-INDUCED REVERSE CURRENTAND CORRESPONDING DEFECT LEVELS IN LOW AND HIGH-RESISTIVITY SILICON DETECTORS
Authors: EREMIN V IVANOV A VERBITSKAYA E LI Z KRANER HW
Citation: V. Eremin et al., ELEVATED-TEMPERATURE ANNEALING OF THE NEUTRON-INDUCED REVERSE CURRENTAND CORRESPONDING DEFECT LEVELS IN LOW AND HIGH-RESISTIVITY SILICON DETECTORS, IEEE transactions on nuclear science, 42(4), 1995, pp. 387-393
SILICON DETECTOR SYSTEM FOR HIGH-RATE EXAFS APPLICATIONS
Authors: PULLIA A KRANER HW SIDDONS DP FURENLID LR BERTUCCIO G
Citation: A. Pullia et al., SILICON DETECTOR SYSTEM FOR HIGH-RATE EXAFS APPLICATIONS, IEEE transactions on nuclear science, 42(4), 1995, pp. 585-589
FABRICATION OF LARGE-AREA SI CYLINDRICAL DRIFT DETECTORS
Authors: CHEN W KRANER HW LI Z REHAK P HESS F
Citation: W. Chen et al., FABRICATION OF LARGE-AREA SI CYLINDRICAL DRIFT DETECTORS, IEEE transactions on nuclear science, 41(4), 1994, pp. 941-947
Risultati: 1-15 |