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Results: 1-8 |
Results: 8
EFFECTS OF POSTDEPOSITION TREATMENT ON THE PL SPECTRA AND THE HYDROGEN CONTENT OF CUINS2 ABSORBER LAYERS
Authors: TOPPER K KRAUSER J BRUNS J SCHEER R WEIDINGER A BRAUNING D
Citation: K. Topper et al., EFFECTS OF POSTDEPOSITION TREATMENT ON THE PL SPECTRA AND THE HYDROGEN CONTENT OF CUINS2 ABSORBER LAYERS, Solar energy materials and solar cells, 49(1-4), 1997, pp. 383-390
PRESSURE COMPOSITION ISOTHERMS OF PROTON CONDUCTING SRYB0.05ZR0.95O2.975/H2O BY MEANS OF NUCLEAR-RESONANCE REACTION ANALYSIS/
Authors: HEMPELMANN R ESCHENBAUM J ALTMAYER M GROSS B GRAMBOLE D HERRMANN F NAGENGAST D KRAUSER J WEIDINGER A
Citation: R. Hempelmann et al., PRESSURE COMPOSITION ISOTHERMS OF PROTON CONDUCTING SRYB0.05ZR0.95O2.975/H2O BY MEANS OF NUCLEAR-RESONANCE REACTION ANALYSIS/, Berichte der Bunsengesellschaft fur Physikalische Chemie, 101(7), 1997, pp. 985-993
ION-IMPLANTATION INTO FULLERENE
Authors: FINK D KRAUSER J NAGENGAST D BEHAR M KASCHNY J GRANDE P HNATOWICZ V VACIK J PALMETSHOFER L
Citation: D. Fink et al., ION-IMPLANTATION INTO FULLERENE, Fullerene science and technology, 4(3), 1996, pp. 535-552
HYDROGEN IMPLANTATION AND DIFFUSION IN SILICON AND SILICON DIOXIDE
Authors: FINK D KRAUSER J NAGENGAST D MURPHY TA ERXMEIER J PALMETSHOFER L BRAUNIG D WEIDINGER A
Citation: D. Fink et al., HYDROGEN IMPLANTATION AND DIFFUSION IN SILICON AND SILICON DIOXIDE, Applied physics A: Materials science & processing, 61(4), 1995, pp. 381-388
HYDROGEN PEAK CONCENTRATION IN THE SIO2 SI TRANSITION ZONE AS A FUNCTION OF OXIDE FILM THICKNESS/
Authors: MASER K KRAUSER J BERGER H BRAUNIG D
Citation: K. Maser et al., HYDROGEN PEAK CONCENTRATION IN THE SIO2 SI TRANSITION ZONE AS A FUNCTION OF OXIDE FILM THICKNESS/, Microelectronic engineering, 28(1-4), 1995, pp. 129-132
HYDROGEN CONCENTRATION AND INTERFACE STATE GENERATION DUE TO IONIZING-RADIATION IN ALUMINUM AND POLYSILICON GATE MOS DEVICES
Authors: SCHARF S KRAUSER J STORRING M WULF F BRAUNIG D
Citation: S. Scharf et al., HYDROGEN CONCENTRATION AND INTERFACE STATE GENERATION DUE TO IONIZING-RADIATION IN ALUMINUM AND POLYSILICON GATE MOS DEVICES, Microelectronic engineering, 28(1-4), 1995, pp. 353-356
MEASUREMENT AND ANALYSIS OF HYDROGEN DEPTH PROFILES IN MOS-STRUCTURESBY USING THE N-15 NUCLEAR-REACTION METHOD
Authors: KRAUSER J WULF F BRAUNIG D
Citation: J. Krauser et al., MEASUREMENT AND ANALYSIS OF HYDROGEN DEPTH PROFILES IN MOS-STRUCTURESBY USING THE N-15 NUCLEAR-REACTION METHOD, Journal of non-crystalline solids, 187, 1995, pp. 264-269
STUDY OF HYDROGEN INCORPORATION IN MOS-STRUCTURES AFTER VARIOUS PROCESS STEPS USING NUCLEAR-REACTION ANALYSIS (NRA)
Authors: KRAUSER J WULF F BRIERE MA STEIGER J BRAUNIG D
Citation: J. Krauser et al., STUDY OF HYDROGEN INCORPORATION IN MOS-STRUCTURES AFTER VARIOUS PROCESS STEPS USING NUCLEAR-REACTION ANALYSIS (NRA), Microelectronic engineering, 22(1-4), 1993, pp. 65-68
Risultati: 1-8 |