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Results: 1-25/29
Authors:
KRAUSEREHBERG R
LEIPNER HS
ABGARJAN T
POLITY A
Citation: R. Krauserehberg et al., REVIEW OF DEFECT INVESTIGATIONS BY MEANS OF POSITRON-ANNIHILATION IN II-VI COMPOUND SEMICONDUCTORS, Applied physics A: Materials science & processing, 66(6), 1998, pp. 599-614
Authors:
POLITY A
BORNER F
HUTH S
EICHLER S
KRAUSEREHBERG R
Citation: A. Polity et al., DEFECTS IN ELECTRON-IRRADIATED SI STUDIED BY POSITRON-LIFETIME SPECTROSCOPY, Physical review. B, Condensed matter, 58(16), 1998, pp. 10363-10377
Authors:
BORNER F
EICHLER S
POLITY A
KRAUSEREHBERG R
HAMMER R
JURISCH M
Citation: F. Borner et al., DETERMINATION OF THE DEFECT DEPTH PROFILE AFTER SAW CUTTING OF GAAS WAFERS MEASURED BY POSITRON-ANNIHILATION, Journal of applied physics, 84(4), 1998, pp. 2255-2262
Authors:
POLITY A
KRAUSEREHBERG R
STAAB TEM
PUSKA MJ
KLAIS J
MOLLER HJ
MEYER BK
Citation: A. Polity et al., STUDY OF DEFECTS IN ELECTRON-IRRADIATED CUINSE2 BY POSITRON LIFETIME SPECTROSCOPY, Journal of applied physics, 83(1), 1998, pp. 71-78
Authors:
LUYSBERG M
SOHN H
PRASAD A
SPECHT P
LILIENTALWEBER Z
WEBER ER
GEBAUER J
KRAUSEREHBERG R
Citation: M. Luysberg et al., EFFECTS OF THE GROWTH TEMPERATURE AND AS GA FLUX RATIO ON THE INCORPORATION OF EXCESS AS INTO LOW-TEMPERATURE-GROWN GAAS/, Journal of applied physics, 83(1), 1998, pp. 561-566
Authors:
KRAUSEREHBERG R
LEIPNER HS
Citation: R. Krauserehberg et Hs. Leipner, DETERMINATION OF ABSOLUTE VACANCY CONCENTRATIONS IN SEMICONDUCTORS BYMEANS OF POSITRON-ANNIHILATION, Applied physics A: Materials science & processing, 64(5), 1997, pp. 457-466
Authors:
EICHLER S
HUBNER C
KRAUSEREHBERG R
Citation: S. Eichler et al., A MONTE-CARLO SIMULATION OF POSITRON DIFFUSION IN SOLIDS, Applied surface science, 116, 1997, pp. 155-161
Authors:
GEBAUER J
EICHLER S
KRAUSEREHBERG R
POLITY A
Citation: J. Gebauer et al., CHARACTERIZATION OF VACANCY-LIKE DEFECTS IN BORON-IMPLANTED SILICON WITH SLOW POSITRONS, Applied surface science, 116, 1997, pp. 215-221
Authors:
HAHN C
KRAUSEREHBERG R
HEILER M
WOLTER H
NEDDERMEYER H
WANDELT K
OTTO A
Citation: C. Hahn et al., DEFECTS IN CU AND AG OVERLAYERS EPITAXIALLY GROWN ON A RU(0001) SUBSTRATE STUDIED BY SLOW POSITRONS, Applied surface science, 116, 1997, pp. 222-227
Authors:
GEBAUER J
EICHLER S
KRAUSEREHBERG R
ZEINDL HP
Citation: J. Gebauer et al., EXPERIMENTS TO DETERMINE THE MEAN DEPTH SCALE OF POSITRONS IN SILICON- SLOW POSITRON BEAM MEASUREMENTS ON MBE-GROWN SILICON LAYERS ON SILICON-OXIDE, Applied surface science, 116, 1997, pp. 247-250
Authors:
EICHLER S
GEBAUER J
BORNER F
POLITY A
KRAUSEREHBERG R
WENDLER E
WEBER B
WESCH W
BORNER H
Citation: S. Eichler et al., DEFECTS IN SILICON AFTER B- A STUDY USING A POSITRON-BEAM TECHNIQUE, RUTHERFORD BACKSCATTERING, SECONDARY NEUTRAL MASS-SPECTROSCOPY, AND INFRARED-ABSORPTION SPECTROSCOPY( IMPLANTATION ), Physical review. B, Condensed matter, 56(3), 1997, pp. 1393-1403
Authors:
POLITY A
RUDOLF F
NAGEL C
EICHLER S
KRAUSEREHBERG R
Citation: A. Polity et al., DEFECTS IN ELECTRON-IRRADIATED GAAS STUDIED BY POSITRON LIFETIME SPECTROSCOPY, Physical review. B, Condensed matter, 55(16), 1997, pp. 10467-10479
Authors:
GEBAUER J
KRAUSEREHBERG R
DOMKE C
EBERT P
URBAN K
Citation: J. Gebauer et al., IDENTIFICATION AND QUANTIFICATION OF DEFECTS IN HIGHLY SI-DOPED GAAS BY POSITRON-ANNIHILATION AND SCANNING-TUNNELING-MICROSCOPY (VOL 78, PG3334, 1997), Physical review letters, 79(5), 1997, pp. 958-958
Authors:
GEBAUER J
KRAUSEREHBERG R
DOMKE C
EBERT P
URBAN K
Citation: J. Gebauer et al., IDENTIFICATION AND QUANTIFICATION OF DEFECTS IN HIGHLY SI-DOPED GAAS BY POSITRON-ANNIHILATION AND SCANNING-TUNNELING-MICROSCOPY, Physical review letters, 78(17), 1997, pp. 3334-3337
Authors:
GEBAUER J
KRAUSEREHBERG R
EICHLER S
LUYSBERG M
SOHN H
WEBER ER
Citation: J. Gebauer et al., GA VACANCIES IN LOW-TEMPERATURE-GROWN GAAS IDENTIFIED BY SLOW POSITRONS, Applied physics letters, 71(5), 1997, pp. 638-640
Authors:
SOMIESKI B
STAAB TEM
KRAUSEREHBERG R
Citation: B. Somieski et al., THE DATA TREATMENT INFLUENCE ON THE SPECTRA DECOMPOSITION IN POSITRONLIFETIME SPECTROSCOPY .1. ON THE INTERPRETATION OF MULTICOMPONENT ANALYSIS STUDIED BY MONTE-CARLO SIMULATED MODEL SPECTRA, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 381(1), 1996, pp. 128-140
Authors:
STAAB TEM
SOMIESKI B
KRAUSEREHBERG R
Citation: Tem. Staab et al., THE DATA TREATMENT INFLUENCE ON THE SPECTRA DECOMPOSITION IN POSITRONLIFETIME SPECTROSCOPY .2. THE EFFECT OF SOURCE CORRECTIONS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 381(1), 1996, pp. 141-151
Authors:
KRAUSEREHBERG R
LEIPNER HS
POLITY A
RUDOLF F
HAMMER R
JURISCH M
Citation: R. Krauserehberg et al., MECHANICAL DAMAGE IN GAAS WAFERS INTRODUCED BY A DIAMOND SAW - A STUDY BY MEANS OF POSITRON-ANNIHILATION AND ELECTRON-MICROSCOPY, Physica status solidi. a, Applied research, 158(2), 1996, pp. 377-383
Authors:
NEUBERT M
JACOBS K
KRAUSEREHBERG R
ABGARJAN T
GILLE P
HOERSTEL W
Citation: M. Neubert et al., MERCURY VACANCY EQUILIBRIA IN HG1-XCDXTE, Journal of applied physics, 79(10), 1996, pp. 7563-7569
Authors:
SOMIESKI B
KRAUSEREHBERG R
SALZ H
MEYENDORF N
Citation: B. Somieski et al., APPLICATION OF THE POSITRON LIFETIME SPECTROSCOPY AS METHOD OF NONDESTRUCTIVE TESTING, Journal de physique. IV, 5(C1), 1995, pp. 127-134
Authors:
HUBNER C
STAAB T
KRAUSEREHBERG R
Citation: C. Hubner et al., ON THE INTERPRETATION OF POSITRON-ANNIHILATION DATA IN POWDERS AND FINE-GRAINED MATERIALS - A MONTE-CARLO SIMULATION, Applied physics A: Materials science & processing, 61(2), 1995, pp. 203-206
Authors:
POLITY A
ABGARJAN T
KRAUSEREHBERG R
Citation: A. Polity et al., DEFECTS IN ELECTRON-IRRADIATED GAP STUDIED BY POSITRON LIFETIME SPECTROSCOPY, Applied physics A: Materials science & processing, 60(6), 1995, pp. 541-544
Authors:
STADLER W
HOFMANN DM
MEYER BK
KRAUSEREHBERG R
POLITY A
ABGARJAN T
SALK M
BENZ KW
AZOULAY M
Citation: W. Stadler et al., COMPENSATION MODELS IN CHLORINE DOPED CDTE BASED ON POSITION ANNIHILATION AND PHOTOLUMINESCENCE SPECTROSCOPY, Acta Physica Polonica. A, 88(5), 1995, pp. 921-924
Authors:
SOMIESKI B
SALZ H
KRAUSEREHBERG R
Citation: B. Somieski et al., POSITRON LIFETIME SPECTROSCOPY (POLIS) - A NEW METHOD OF NDT, NDT & E international, 27(5), 1994, pp. 235-239
Authors:
KRAUSEREHBERG R
LEIPNER HS
KUPSCH A
POLITY A
DROST T
Citation: R. Krauserehberg et al., POSITRON STUDY OF DEFECTS IN AS-GROWN AND PLASTICALLY DEFORMED GAAS-TE, Physical review. B, Condensed matter, 49(4), 1994, pp. 2385-2395