Authors: BIESEMANS S HENDRIKS M KUBICEK S DEMEYER K

Citation: S. Biesemans et al., PRACTICAL ACCURACY ANALYSIS OF SOME EXISTING EFFECTIVE CHANNEL-LENGTHAND SERIES RESISTANCE EXTRACTION METHODS FOR MOSFETS, I.E.E.E. transactions on electron devices, 45(6), 1998, pp. 1310-1316

Authors: BIESEMANS S KUBICEK S DEMAYER K

Citation: S. Biesemans et al., TEST STRUCTURE TO INVESTIGATE THE SERIES RESISTANCE COMPONENTS OF SOURCE DRAIN STRUCTURE/, IEEE electron device letters, 18(10), 1997, pp. 477-479

Authors: BIESEMANS S KUBICEK S DEMEYER K

Citation: S. Biesemans et al., USE OF INDIUM AND GALLIUM AS P-TYPE DOPANTS IN SI 0.1-MU-M MOSFETS, JPN J A P 1, 35(2B), 1996, pp. 1037-1040

Authors: BIESEMANS S KUBICEK S DEMEYER K

Citation: S. Biesemans et al., NEW CURRENT-DEFINED THRESHOLD VOLTAGE MODEL FROM 2D POTENTIAL DISTRIBUTION CALCULATIONS IN MOSFETS, Solid-state electronics, 39(1), 1996, pp. 43-48