AAAAAA

   
Results: 1-8 |
Results: 8
LUMINESCENCE OF GAN GAAS(111)B GROWN BY MOLECULAR-BEAM EPITAXY WITH HYDRAZINE/
Authors: NIKISHIN SA ANTIPOV VG GURIEV AI ELYUKHIN VA FALEEV NN KUDRIAVTSEV YA LEBEDEV AB SHUBINA TV ZUBRILOV AS TEMKIN H
Citation: Sa. Nikishin et al., LUMINESCENCE OF GAN GAAS(111)B GROWN BY MOLECULAR-BEAM EPITAXY WITH HYDRAZINE/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1289-1292
SINGLE-PHASE ZNSNAS2 GROWN BY MOLECULAR-BEAM EPITAXY
Authors: SERYOGIN GA NIKISHIN SA TEMKIN H SCHLAF R SHARP LI WEN YC PARKINSON B ELYUKHIN VA KUDRIAVTSEV YA MINTAIROV AM FALEEV NN BAIDAKOVA MV
Citation: Ga. Seryogin et al., SINGLE-PHASE ZNSNAS2 GROWN BY MOLECULAR-BEAM EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1456-1458
MBE GROWTH AND CHARACTERIZATION OF MAGNESIUM-DOPED GALLIUM NITRIDE
Authors: DEWSNIP DJ ORTON JW LACKLISON DE FLANNERY L ANDRIANOV AV HARRISON I HOOPER SE CHENG TS FOXON CT NOVIKOV SN BER BY KUDRIAVTSEV YA
Citation: Dj. Dewsnip et al., MBE GROWTH AND CHARACTERIZATION OF MAGNESIUM-DOPED GALLIUM NITRIDE, Semiconductor science and technology, 13(8), 1998, pp. 927-935
SECONDARY-ION MASS-SPECTROSCOPY INVESTIGATIONS OF MAGNESIUM AND CARBON-DOPED GALLIUM NITRIDE FILMS GROWN BY MOLECULAR-BEAM EPITAXY
Authors: BER BY KUDRIAVTSEV YA MERKULOV AV NOVIKOV SV LACKLISON DE ORTON JW CHENG TS FOXON CT
Citation: By. Ber et al., SECONDARY-ION MASS-SPECTROSCOPY INVESTIGATIONS OF MAGNESIUM AND CARBON-DOPED GALLIUM NITRIDE FILMS GROWN BY MOLECULAR-BEAM EPITAXY, Semiconductor science and technology, 13(1), 1998, pp. 71-74
STUDIES OF P-GAN GROWN BY MBE ON GAAS(111)B
Authors: FOXON CT CHENG TS JEFFS NJ DEWSNIP J FLANNERY L ORTON JW HARRISON I NOVIKOV SV BER BY KUDRIAVTSEV YA
Citation: Ct. Foxon et al., STUDIES OF P-GAN GROWN BY MBE ON GAAS(111)B, Journal of crystal growth, 190, 1998, pp. 516-518
SPUTTERING OF III-V SEMICONDUCTORS UNDER ARGON ATOM AND ION-BOMBARDMENT
Authors: SOSHNIKOV IP KUDRIAVTSEV YA LUNEV AV BERT NA
Citation: Ip. Soshnikov et al., SPUTTERING OF III-V SEMICONDUCTORS UNDER ARGON ATOM AND ION-BOMBARDMENT, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 115-118
GROWTH OF SINGLE-PHASE GAAS1-XNX WITH HIGH-NITROGEN CONCENTRATION BY METAL-ORGANIC MOLECULAR-BEAM EPITAXY
Authors: QIU Y NIKISHIN SA TEMKIN H FALEEV NN KUDRIAVTSEV YA
Citation: Y. Qiu et al., GROWTH OF SINGLE-PHASE GAAS1-XNX WITH HIGH-NITROGEN CONCENTRATION BY METAL-ORGANIC MOLECULAR-BEAM EPITAXY, Applied physics letters, 70(24), 1997, pp. 3242-3244
THERMODYNAMIC CONSIDERATIONS IN EPITAXIAL-GROWTH OF GAAS1-XNX SOLID-SOLUTIONS
Authors: QIU Y NIKISHIN SA TEMKIN H ELYUKHIN VA KUDRIAVTSEV YA
Citation: Y. Qiu et al., THERMODYNAMIC CONSIDERATIONS IN EPITAXIAL-GROWTH OF GAAS1-XNX SOLID-SOLUTIONS, Applied physics letters, 70(21), 1997, pp. 2831-2833
Risultati: 1-8 |