Authors:
HOFFMANN D
HAAS A
KUNSTMANN T
SEIFRITZ J
MOLLER R
Citation: D. Hoffmann et al., THERMOVOLTAGE IN SCANNING-TUNNELING-MICROSCOPY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 1418-1422
Citation: S. Veprek et al., RELAXATION OF INTERFACIAL STRESS AND IMPROVED QUALITY OF HETEROEPITAXIAL 3C-SIC FILMS ON (100)SI DEPOSITED BY ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITION AT 1200-DEGREES-C, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(1), 1997, pp. 10-17
Authors:
CHALKER PR
JOHNSTON C
ROMANI S
AYRES CF
BUCKLEYGOLDER IM
KROTZ G
ANGERER H
MULLER G
VEPREK S
KUNSTMANN T
LEGNER W
SMITH LM
LEESE AB
JONES AC
RUSHWORTH SA
Citation: Pr. Chalker et al., FORMATION OF EPITAXIAL DIAMOND SILICON-CARBIDE HETEROJUNCTIONS, DIAMOND AND RELATED MATERIALS, 4(5-6), 1995, pp. 632-636
Authors:
KUNSTMANN T
ANGERER H
KNECHT J
VEPREK S
MITZEL NW
SCHMIDBAUR H
Citation: T. Kunstmann et al., NOVEL BROMINATED CARBOSILANE PRECURSORS FOR LOW-TEMPERATURE HETEROEPITAXY OF BETA-SIC AND THEIR COMPARISON WITH METHYLTRICHLOROSILANE, Chemistry of materials, 7(9), 1995, pp. 1675-1679
Citation: T. Kunstmann et S. Veprek, HETEROEPITAXY OF BETA-SIC FROM METHYLTRICHLOROSILANE AND METHYLTRIBROMOSILANE ON SI(100) WITHOUT A CARBON BUFFER LAYER, Applied physics letters, 67(21), 1995, pp. 3126-3128